Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors

Detalhes bibliográficos
Autor(a) principal: Amato, Angélica Amorim
Data de Publicação: 2002
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UnB
Texto Completo: http://repositorio.unb.br/handle/10482/25956
https://dx.doi.org/10.1590/S1806-11172002000400003
Resumo: It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.
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spelling Amato, Angélica Amorim2017-12-07T04:37:06Z2017-12-07T04:37:06Z2002Rev. Bras. Ensino Fís.,v.24,n.4,p.379-382,2002http://repositorio.unb.br/handle/10482/25956https://dx.doi.org/10.1590/S1806-11172002000400003It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.Em processamentoSociedade Brasileira de FísicaLight Absorption near Threshold with Phonon Participation for Impurities in Semiconductorsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccessengreponame:Repositório Institucional da UnBinstname:Universidade de Brasília (UnB)instacron:UNBORIGINALa03v24n4.pdfapplication/pdf139783http://repositorio2.unb.br/jspui/bitstream/10482/25956/1/a03v24n4.pdfca9c386c3d2c38dc2ef5de65adadf170MD51open access10482/259562023-10-11 14:23:49.067open accessoai:repositorio2.unb.br:10482/25956Biblioteca Digital de Teses e DissertaçõesPUBhttps://repositorio.unb.br/oai/requestopendoar:2023-10-11T17:23:49Repositório Institucional da UnB - Universidade de Brasília (UnB)false
dc.title.pt_BR.fl_str_mv Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
title Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
spellingShingle Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
Amato, Angélica Amorim
title_short Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
title_full Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
title_fullStr Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
title_full_unstemmed Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
title_sort Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
author Amato, Angélica Amorim
author_facet Amato, Angélica Amorim
author_role author
dc.contributor.author.fl_str_mv Amato, Angélica Amorim
description It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.
publishDate 2002
dc.date.issued.fl_str_mv 2002
dc.date.accessioned.fl_str_mv 2017-12-07T04:37:06Z
dc.date.available.fl_str_mv 2017-12-07T04:37:06Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.citation.fl_str_mv Rev. Bras. Ensino Fís.,v.24,n.4,p.379-382,2002
dc.identifier.uri.fl_str_mv http://repositorio.unb.br/handle/10482/25956
dc.identifier.doi.pt_BR.fl_str_mv https://dx.doi.org/10.1590/S1806-11172002000400003
identifier_str_mv Rev. Bras. Ensino Fís.,v.24,n.4,p.379-382,2002
url http://repositorio.unb.br/handle/10482/25956
https://dx.doi.org/10.1590/S1806-11172002000400003
dc.language.iso.fl_str_mv eng
language eng
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dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv reponame:Repositório Institucional da UnB
instname:Universidade de Brasília (UnB)
instacron:UNB
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reponame_str Repositório Institucional da UnB
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