Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates

Detalhes bibliográficos
Autor(a) principal: González Borrero, Pedro Pablo
Data de Publicação: 2009
Outros Autores: Alves, M. V., Júnior, E. Marega
Tipo de documento: Artigo
Idioma: por
Título da fonte: Revista Ciências Exatas e Naturais (Online)
Texto Completo: https://revistas.unicentro.br/index.php/RECEN/article/view/477
Resumo: The incorporation and amphoteric behavior of Si has been investigated in molecular beam epitaxy (MBE) GaAs samples grown on (311)A, (211)A and (111)A substrates at different growth conditions. Hall effect measurements have revealed that the doping changes from p- to n-type when the V4/III flux ratio is increased and the growth temperature is decreased. The transition flux ratio is lower for the (211)A than for the (311)A surfaces. Photoluminescence measurements have shown that, when the V4/III flux ratio is increased or the growth temperature is decreased, arsenic vacancy defects are changed into pairs of Ga vacancy and Ga antisite defects. These results are explained by considering the kinetics of the MBE growth process and the orientation dependence of the surface bonding.
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spelling Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substratesGaAs dopado com Si; propriedades ́opticas do GaAs dopado com Si; subs-tratos de GaAs não orientados na direção (100). The incorporation and amphoteric behavior of Si has been investigated in molecular beam epitaxy (MBE) GaAs samples grown on (311)A, (211)A and (111)A substrates at different growth conditions. Hall effect measurements have revealed that the doping changes from p- to n-type when the V4/III flux ratio is increased and the growth temperature is decreased. The transition flux ratio is lower for the (211)A than for the (311)A surfaces. Photoluminescence measurements have shown that, when the V4/III flux ratio is increased or the growth temperature is decreased, arsenic vacancy defects are changed into pairs of Ga vacancy and Ga antisite defects. These results are explained by considering the kinetics of the MBE growth process and the orientation dependence of the surface bonding.UNICENTROGonzález Borrero, Pedro PabloAlves, M. V.Júnior, E. Marega2009-12-16info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionArtigoapplication/pdfhttps://revistas.unicentro.br/index.php/RECEN/article/view/477RECEN-Revista de Ciências Naturais e Exatas; v. 3, n. 2 (2001); 143-156RECEN - Revista Ciências Exatas e Naturais; v. 3, n. 2 (2001); 143-1562175-56201518-0352reponame:Revista Ciências Exatas e Naturais (Online)instname:Universidade Estadual do Centro-Oeste (UNICENTRO)instacron:UNENTROporhttps://revistas.unicentro.br/index.php/RECEN/article/view/477/632info:eu-repo/semantics/openAccess2009-12-16T22:03:33Zoai:ojs.revistas.unicentro.br:article/477Revistahttps://revistas.unicentro.br/index.php/RECENPUBhttps://revistas.unicentro.br/index.php/RECEN/oai||recen@unicentro.br2175-56201518-0352opendoar:2009-12-16T22:03:33Revista Ciências Exatas e Naturais (Online) - Universidade Estadual do Centro-Oeste (UNICENTRO)false
dc.title.none.fl_str_mv Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates
title Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates
spellingShingle Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates
González Borrero, Pedro Pablo
GaAs dopado com Si; propriedades ́opticas do GaAs dopado com Si; subs-tratos de GaAs não orientados na direção (100).
title_short Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates
title_full Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates
title_fullStr Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates
title_full_unstemmed Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates
title_sort Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates
author González Borrero, Pedro Pablo
author_facet González Borrero, Pedro Pablo
Alves, M. V.
Júnior, E. Marega
author_role author
author2 Alves, M. V.
Júnior, E. Marega
author2_role author
author
dc.contributor.none.fl_str_mv
dc.contributor.author.fl_str_mv González Borrero, Pedro Pablo
Alves, M. V.
Júnior, E. Marega
dc.subject.none.fl_str_mv
dc.subject.por.fl_str_mv GaAs dopado com Si; propriedades ́opticas do GaAs dopado com Si; subs-tratos de GaAs não orientados na direção (100).
topic GaAs dopado com Si; propriedades ́opticas do GaAs dopado com Si; subs-tratos de GaAs não orientados na direção (100).
description The incorporation and amphoteric behavior of Si has been investigated in molecular beam epitaxy (MBE) GaAs samples grown on (311)A, (211)A and (111)A substrates at different growth conditions. Hall effect measurements have revealed that the doping changes from p- to n-type when the V4/III flux ratio is increased and the growth temperature is decreased. The transition flux ratio is lower for the (211)A than for the (311)A surfaces. Photoluminescence measurements have shown that, when the V4/III flux ratio is increased or the growth temperature is decreased, arsenic vacancy defects are changed into pairs of Ga vacancy and Ga antisite defects. These results are explained by considering the kinetics of the MBE growth process and the orientation dependence of the surface bonding.
publishDate 2009
dc.date.none.fl_str_mv 2009-12-16
dc.type.none.fl_str_mv
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Artigo
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://revistas.unicentro.br/index.php/RECEN/article/view/477
url https://revistas.unicentro.br/index.php/RECEN/article/view/477
dc.language.iso.fl_str_mv por
language por
dc.relation.none.fl_str_mv https://revistas.unicentro.br/index.php/RECEN/article/view/477/632
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv UNICENTRO
publisher.none.fl_str_mv UNICENTRO
dc.source.none.fl_str_mv RECEN-Revista de Ciências Naturais e Exatas; v. 3, n. 2 (2001); 143-156
RECEN - Revista Ciências Exatas e Naturais; v. 3, n. 2 (2001); 143-156
2175-5620
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reponame:Revista Ciências Exatas e Naturais (Online)
instname:Universidade Estadual do Centro-Oeste (UNICENTRO)
instacron:UNENTRO
instname_str Universidade Estadual do Centro-Oeste (UNICENTRO)
instacron_str UNENTRO
institution UNENTRO
reponame_str Revista Ciências Exatas e Naturais (Online)
collection Revista Ciências Exatas e Naturais (Online)
repository.name.fl_str_mv Revista Ciências Exatas e Naturais (Online) - Universidade Estadual do Centro-Oeste (UNICENTRO)
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