Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1007/s11664-020-08242-3 http://hdl.handle.net/11449/195470 |
Resumo: | Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable& x2423;organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (similar to 20 kDa, 30-50 kDa and 80-90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid (SiO2/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 cm(2) V-1 s(-1), pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm andR = 5 mm). |
id |
UNSP_0473c46e953f89c20fd3635a3a59e4c7 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/195470 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device PerformancePoly-3-hexylthiophene (P3HT)bendable polymer substratesion-gated transistorsionic liquidsPoly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable& x2423;organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (similar to 20 kDa, 30-50 kDa and 80-90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid (SiO2/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 cm(2) V-1 s(-1), pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm andR = 5 mm).China Scholarship CouncilNSERC (DG)Polytech Montreal, Engn Phys Dept, Montreal, PQ H3C 3A7, CanadaSao Paulo State Univ, Dept Fis Quim, BR-14800060 Sao Paulo, BrazilSao Paulo State Univ, Dept Fis Quim, BR-14800060 Sao Paulo, BrazilSpringerPolytech MontrealUniversidade Estadual Paulista (Unesp)Lan, TianGao, ZhaojingBarbosa, Martin S. [UNESP]Santato, Clara2020-12-10T17:35:40Z2020-12-10T17:35:40Z2020-06-17info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article5302-5307http://dx.doi.org/10.1007/s11664-020-08242-3Journal Of Electronic Materials. New York: Springer, v. 49, n. 9, p. 5302-5307, 2020.0361-5235http://hdl.handle.net/11449/19547010.1007/s11664-020-08242-3WOS:000543575600001Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal Of Electronic Materialsinfo:eu-repo/semantics/openAccess2021-10-23T08:53:34Zoai:repositorio.unesp.br:11449/195470Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T21:33:14.280457Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance |
title |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance |
spellingShingle |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance Lan, Tian Poly-3-hexylthiophene (P3HT) bendable polymer substrates ion-gated transistors ionic liquids |
title_short |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance |
title_full |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance |
title_fullStr |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance |
title_full_unstemmed |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance |
title_sort |
Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance |
author |
Lan, Tian |
author_facet |
Lan, Tian Gao, Zhaojing Barbosa, Martin S. [UNESP] Santato, Clara |
author_role |
author |
author2 |
Gao, Zhaojing Barbosa, Martin S. [UNESP] Santato, Clara |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Polytech Montreal Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Lan, Tian Gao, Zhaojing Barbosa, Martin S. [UNESP] Santato, Clara |
dc.subject.por.fl_str_mv |
Poly-3-hexylthiophene (P3HT) bendable polymer substrates ion-gated transistors ionic liquids |
topic |
Poly-3-hexylthiophene (P3HT) bendable polymer substrates ion-gated transistors ionic liquids |
description |
Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable& x2423;organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (similar to 20 kDa, 30-50 kDa and 80-90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid (SiO2/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 cm(2) V-1 s(-1), pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm andR = 5 mm). |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-12-10T17:35:40Z 2020-12-10T17:35:40Z 2020-06-17 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1007/s11664-020-08242-3 Journal Of Electronic Materials. New York: Springer, v. 49, n. 9, p. 5302-5307, 2020. 0361-5235 http://hdl.handle.net/11449/195470 10.1007/s11664-020-08242-3 WOS:000543575600001 |
url |
http://dx.doi.org/10.1007/s11664-020-08242-3 http://hdl.handle.net/11449/195470 |
identifier_str_mv |
Journal Of Electronic Materials. New York: Springer, v. 49, n. 9, p. 5302-5307, 2020. 0361-5235 10.1007/s11664-020-08242-3 WOS:000543575600001 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal Of Electronic Materials |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
5302-5307 |
dc.publisher.none.fl_str_mv |
Springer |
publisher.none.fl_str_mv |
Springer |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129334813130752 |