Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance

Detalhes bibliográficos
Autor(a) principal: Lan, Tian
Data de Publicação: 2020
Outros Autores: Gao, Zhaojing, Barbosa, Martin S. [UNESP], Santato, Clara
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1007/s11664-020-08242-3
http://hdl.handle.net/11449/195470
Resumo: Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable& x2423;organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (similar to 20 kDa, 30-50 kDa and 80-90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid (SiO2/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 cm(2) V-1 s(-1), pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm andR = 5 mm).
id UNSP_0473c46e953f89c20fd3635a3a59e4c7
oai_identifier_str oai:repositorio.unesp.br:11449/195470
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device PerformancePoly-3-hexylthiophene (P3HT)bendable polymer substratesion-gated transistorsionic liquidsPoly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable& x2423;organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (similar to 20 kDa, 30-50 kDa and 80-90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid (SiO2/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 cm(2) V-1 s(-1), pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm andR = 5 mm).China Scholarship CouncilNSERC (DG)Polytech Montreal, Engn Phys Dept, Montreal, PQ H3C 3A7, CanadaSao Paulo State Univ, Dept Fis Quim, BR-14800060 Sao Paulo, BrazilSao Paulo State Univ, Dept Fis Quim, BR-14800060 Sao Paulo, BrazilSpringerPolytech MontrealUniversidade Estadual Paulista (Unesp)Lan, TianGao, ZhaojingBarbosa, Martin S. [UNESP]Santato, Clara2020-12-10T17:35:40Z2020-12-10T17:35:40Z2020-06-17info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article5302-5307http://dx.doi.org/10.1007/s11664-020-08242-3Journal Of Electronic Materials. New York: Springer, v. 49, n. 9, p. 5302-5307, 2020.0361-5235http://hdl.handle.net/11449/19547010.1007/s11664-020-08242-3WOS:000543575600001Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal Of Electronic Materialsinfo:eu-repo/semantics/openAccess2021-10-23T08:53:34Zoai:repositorio.unesp.br:11449/195470Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T21:33:14.280457Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
title Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
spellingShingle Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
Lan, Tian
Poly-3-hexylthiophene (P3HT)
bendable polymer substrates
ion-gated transistors
ionic liquids
title_short Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
title_full Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
title_fullStr Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
title_full_unstemmed Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
title_sort Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance
author Lan, Tian
author_facet Lan, Tian
Gao, Zhaojing
Barbosa, Martin S. [UNESP]
Santato, Clara
author_role author
author2 Gao, Zhaojing
Barbosa, Martin S. [UNESP]
Santato, Clara
author2_role author
author
author
dc.contributor.none.fl_str_mv Polytech Montreal
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Lan, Tian
Gao, Zhaojing
Barbosa, Martin S. [UNESP]
Santato, Clara
dc.subject.por.fl_str_mv Poly-3-hexylthiophene (P3HT)
bendable polymer substrates
ion-gated transistors
ionic liquids
topic Poly-3-hexylthiophene (P3HT)
bendable polymer substrates
ion-gated transistors
ionic liquids
description Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable& x2423;organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (similar to 20 kDa, 30-50 kDa and 80-90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid (SiO2/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 cm(2) V-1 s(-1), pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm andR = 5 mm).
publishDate 2020
dc.date.none.fl_str_mv 2020-12-10T17:35:40Z
2020-12-10T17:35:40Z
2020-06-17
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1007/s11664-020-08242-3
Journal Of Electronic Materials. New York: Springer, v. 49, n. 9, p. 5302-5307, 2020.
0361-5235
http://hdl.handle.net/11449/195470
10.1007/s11664-020-08242-3
WOS:000543575600001
url http://dx.doi.org/10.1007/s11664-020-08242-3
http://hdl.handle.net/11449/195470
identifier_str_mv Journal Of Electronic Materials. New York: Springer, v. 49, n. 9, p. 5302-5307, 2020.
0361-5235
10.1007/s11664-020-08242-3
WOS:000543575600001
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal Of Electronic Materials
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 5302-5307
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129334813130752