Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications

Detalhes bibliográficos
Autor(a) principal: Vieira, Douglas H.
Data de Publicação: 2020
Outros Autores: Badiei, Nafiseh, Evans, Jonathan E., Alves, Neri, Kettle, Jeff, Li, Lijie, IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/210291
Resumo: beta-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a beta-Ga2O3 Schottky diode, in which the same electrode material is used for both contacts. The device is tested it for its applicability in deep UV sensing. Devices were manufactured directly onto beta-Ga2O3 (010) wafer material. From the perspective of diode performance, a high rectification ratio of 1.5x10(7) and high forward current of 17.58 mA/cm(2) at -5 V bias was obtained. A responsivity of 12.5 mA/W was recorded when irradiated with light possessing a wavelength of 254 nm. Importantly, detailed analysis is conducted in order to evaluate the performance of the Schottky diode using Cheung's and Norde's methods allowing for accurate calculation of the Schottky barrier height in this device.
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spelling Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applicationsSchottky diodebeta-Ga2O3deep UVplanar diodebeta-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a beta-Ga2O3 Schottky diode, in which the same electrode material is used for both contacts. The device is tested it for its applicability in deep UV sensing. Devices were manufactured directly onto beta-Ga2O3 (010) wafer material. From the perspective of diode performance, a high rectification ratio of 1.5x10(7) and high forward current of 17.58 mA/cm(2) at -5 V bias was obtained. A responsivity of 12.5 mA/W was recorded when irradiated with light possessing a wavelength of 254 nm. Importantly, detailed analysis is conducted in order to evaluate the performance of the Schottky diode using Cheung's and Norde's methods allowing for accurate calculation of the Schottky barrier height in this device.Solar Photovoltaic Academic Research Consortium II (SPARC II) project - WEFOFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Programa de Pos-Graduacao em Ciencia e Tecnologia de Materiais (POSMAT)Bangor Univ, Sch Elect Engn, Bangor, Gwynedd, WalesUNESP Sao Paulo State Univ, Dept Phys, Presidente Prudente, BrazilSwansea Univ, Coll Engn, Multidisciplinary Nanotechnol Ctr, Swansea, W Glam, WalesUNESP Sao Paulo State Univ, Dept Phys, Presidente Prudente, BrazilFAPESP: 2019/14366-3IeeeBangor UnivUniversidade Estadual Paulista (Unesp)Swansea UnivVieira, Douglas H.Badiei, NafisehEvans, Jonathan E.Alves, NeriKettle, JeffLi, LijieIEEE2021-06-25T15:03:50Z2021-06-25T15:03:50Z2020-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject42020 Ieee Sensors. New York: Ieee, 4 p., 2020.1930-0395http://hdl.handle.net/11449/210291WOS:000646236300245Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2020 Ieee Sensorsinfo:eu-repo/semantics/openAccess2024-06-18T18:18:36Zoai:repositorio.unesp.br:11449/210291Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:57:35.758339Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications
title Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications
spellingShingle Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications
Vieira, Douglas H.
Schottky diode
beta-Ga2O3
deep UV
planar diode
title_short Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications
title_full Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications
title_fullStr Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications
title_full_unstemmed Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications
title_sort Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications
author Vieira, Douglas H.
author_facet Vieira, Douglas H.
Badiei, Nafiseh
Evans, Jonathan E.
Alves, Neri
Kettle, Jeff
Li, Lijie
IEEE
author_role author
author2 Badiei, Nafiseh
Evans, Jonathan E.
Alves, Neri
Kettle, Jeff
Li, Lijie
IEEE
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Bangor Univ
Universidade Estadual Paulista (Unesp)
Swansea Univ
dc.contributor.author.fl_str_mv Vieira, Douglas H.
Badiei, Nafiseh
Evans, Jonathan E.
Alves, Neri
Kettle, Jeff
Li, Lijie
IEEE
dc.subject.por.fl_str_mv Schottky diode
beta-Ga2O3
deep UV
planar diode
topic Schottky diode
beta-Ga2O3
deep UV
planar diode
description beta-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a beta-Ga2O3 Schottky diode, in which the same electrode material is used for both contacts. The device is tested it for its applicability in deep UV sensing. Devices were manufactured directly onto beta-Ga2O3 (010) wafer material. From the perspective of diode performance, a high rectification ratio of 1.5x10(7) and high forward current of 17.58 mA/cm(2) at -5 V bias was obtained. A responsivity of 12.5 mA/W was recorded when irradiated with light possessing a wavelength of 254 nm. Importantly, detailed analysis is conducted in order to evaluate the performance of the Schottky diode using Cheung's and Norde's methods allowing for accurate calculation of the Schottky barrier height in this device.
publishDate 2020
dc.date.none.fl_str_mv 2020-01-01
2021-06-25T15:03:50Z
2021-06-25T15:03:50Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2020 Ieee Sensors. New York: Ieee, 4 p., 2020.
1930-0395
http://hdl.handle.net/11449/210291
WOS:000646236300245
identifier_str_mv 2020 Ieee Sensors. New York: Ieee, 4 p., 2020.
1930-0395
WOS:000646236300245
url http://hdl.handle.net/11449/210291
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2020 Ieee Sensors
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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