Kubo-Bastin approach for the spin Hall conductivity of decorated graphene

Detalhes bibliográficos
Autor(a) principal: Garcia, Jose H. [UNESP]
Data de Publicação: 2016
Outros Autores: Rappoport, Tatiana G.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1088/2053-1583/3/2/024007
http://hdl.handle.net/11449/173201
Resumo: Theoretical predictions and recent experimental results suggest one can engineer spin Hall effect in graphene by enhancing the spin-orbit coupling (SOC) in the vicinity of an impurity. We use a Chebyshev expansion of the Kubo-Bastin formula to compute the spin conductivity tensor for a tightbinding model of graphene with randomly distributed impurities absorbed on top of carbon atoms. We model the impurity-induced SOC with a graphene-only Hamiltonian that takes into account three different local contributions: intrinsic, Rashba and pseudospin inversion asymmetry SOCs (Gmitra et al 2013 Phys. Rev. Lett. 110 246602). We show how the spin Hall and longitudinal conductivities depend on the strength of the contributions and the concentration of impurities. Additionally, we calculate the real-space projection of the density of states in the vicinity of the Dirac point for single and multiple impurities and correlate these results with the conductivity calculations.
id UNSP_0896707715aeaba57d4cc22f9e10a7bb
oai_identifier_str oai:repositorio.unesp.br:11449/173201
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Kubo-Bastin approach for the spin Hall conductivity of decorated grapheneAdatomsGrapheneSpin Hall effectTheoretical predictions and recent experimental results suggest one can engineer spin Hall effect in graphene by enhancing the spin-orbit coupling (SOC) in the vicinity of an impurity. We use a Chebyshev expansion of the Kubo-Bastin formula to compute the spin conductivity tensor for a tightbinding model of graphene with randomly distributed impurities absorbed on top of carbon atoms. We model the impurity-induced SOC with a graphene-only Hamiltonian that takes into account three different local contributions: intrinsic, Rashba and pseudospin inversion asymmetry SOCs (Gmitra et al 2013 Phys. Rev. Lett. 110 246602). We show how the spin Hall and longitudinal conductivities depend on the strength of the contributions and the concentration of impurities. Additionally, we calculate the real-space projection of the density of states in the vicinity of the Dirac point for single and multiple impurities and correlate these results with the conductivity calculations.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)ICTP South American Institute for Fundamental Research Instituto de Física Teórica UNESP-Universidade Estadual PaulistaInstituto de Física Universidade Federal do Rio de Janeiro, Caixa Postal 68528ICTP South American Institute for Fundamental Research Instituto de Física Teórica UNESP-Universidade Estadual PaulistaCNPq: 307705/2013-7CNPq: 477877/2013-3Universidade Estadual Paulista (Unesp)Universidade Federal do Rio de Janeiro (UFRJ)Garcia, Jose H. [UNESP]Rappoport, Tatiana G.2018-12-11T17:04:07Z2018-12-11T17:04:07Z2016-05-31info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://dx.doi.org/10.1088/2053-1583/3/2/0240072D Materials, v. 3, n. 2, 2016.2053-1583http://hdl.handle.net/11449/17320110.1088/2053-1583/3/2/0240072-s2.0-849776660262-s2.0-84977666026.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2D Materials2,813info:eu-repo/semantics/openAccess2024-01-27T06:59:30Zoai:repositorio.unesp.br:11449/173201Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-06T00:06:12.627800Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Kubo-Bastin approach for the spin Hall conductivity of decorated graphene
title Kubo-Bastin approach for the spin Hall conductivity of decorated graphene
spellingShingle Kubo-Bastin approach for the spin Hall conductivity of decorated graphene
Garcia, Jose H. [UNESP]
Adatoms
Graphene
Spin Hall effect
title_short Kubo-Bastin approach for the spin Hall conductivity of decorated graphene
title_full Kubo-Bastin approach for the spin Hall conductivity of decorated graphene
title_fullStr Kubo-Bastin approach for the spin Hall conductivity of decorated graphene
title_full_unstemmed Kubo-Bastin approach for the spin Hall conductivity of decorated graphene
title_sort Kubo-Bastin approach for the spin Hall conductivity of decorated graphene
author Garcia, Jose H. [UNESP]
author_facet Garcia, Jose H. [UNESP]
Rappoport, Tatiana G.
author_role author
author2 Rappoport, Tatiana G.
author2_role author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Universidade Federal do Rio de Janeiro (UFRJ)
dc.contributor.author.fl_str_mv Garcia, Jose H. [UNESP]
Rappoport, Tatiana G.
dc.subject.por.fl_str_mv Adatoms
Graphene
Spin Hall effect
topic Adatoms
Graphene
Spin Hall effect
description Theoretical predictions and recent experimental results suggest one can engineer spin Hall effect in graphene by enhancing the spin-orbit coupling (SOC) in the vicinity of an impurity. We use a Chebyshev expansion of the Kubo-Bastin formula to compute the spin conductivity tensor for a tightbinding model of graphene with randomly distributed impurities absorbed on top of carbon atoms. We model the impurity-induced SOC with a graphene-only Hamiltonian that takes into account three different local contributions: intrinsic, Rashba and pseudospin inversion asymmetry SOCs (Gmitra et al 2013 Phys. Rev. Lett. 110 246602). We show how the spin Hall and longitudinal conductivities depend on the strength of the contributions and the concentration of impurities. Additionally, we calculate the real-space projection of the density of states in the vicinity of the Dirac point for single and multiple impurities and correlate these results with the conductivity calculations.
publishDate 2016
dc.date.none.fl_str_mv 2016-05-31
2018-12-11T17:04:07Z
2018-12-11T17:04:07Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1088/2053-1583/3/2/024007
2D Materials, v. 3, n. 2, 2016.
2053-1583
http://hdl.handle.net/11449/173201
10.1088/2053-1583/3/2/024007
2-s2.0-84977666026
2-s2.0-84977666026.pdf
url http://dx.doi.org/10.1088/2053-1583/3/2/024007
http://hdl.handle.net/11449/173201
identifier_str_mv 2D Materials, v. 3, n. 2, 2016.
2053-1583
10.1088/2053-1583/3/2/024007
2-s2.0-84977666026
2-s2.0-84977666026.pdf
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2D Materials
2,813
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129583729344512