Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films

Detalhes bibliográficos
Autor(a) principal: Silva, Vitor D. L. [UNESP]
Data de Publicação: 2008
Outros Autores: Pineiz, Tatiane F. [UNESP], Morais, Evandro A. [UNESP], Pinheiro, Marco A. L. [UNESP], Scalvi, Luis Vicente de Andrade [UNESP], Saeki, Margarida Juri [UNESP], Rubo, Elisabete Aparecida Andrello [UNESP]
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1063/1.2926834
http://hdl.handle.net/11449/70411
Resumo: Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.
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spelling Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin filmsCeriumElectroluminescent devicesThin filmsTin dioxideOptical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.Dept. of Physics-FC São Paulo State University - UNESP, C. P. 473, Bauru SPPós-Graduação em Ciência e Tecnologia de Materiais (POSMAT) UNESPDept. of Chemistry and Biochemistry-IB São Paulo State University - UNESP, C.P. 510, Botucatu SPDept. of Physics-FC São Paulo State University - UNESP, C. P. 473, Bauru SPPós-Graduação em Ciência e Tecnologia de Materiais (POSMAT) UNESPDept. of Chemistry and Biochemistry-IB São Paulo State University - UNESP, C.P. 510, Botucatu SPUniversidade Estadual Paulista (Unesp)Silva, Vitor D. L. [UNESP]Pineiz, Tatiane F. [UNESP]Morais, Evandro A. [UNESP]Pinheiro, Marco A. L. [UNESP]Scalvi, Luis Vicente de Andrade [UNESP]Saeki, Margarida Juri [UNESP]Rubo, Elisabete Aparecida Andrello [UNESP]2014-05-27T11:23:33Z2014-05-27T11:23:33Z2008-05-21info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject1283-1288application/pdfhttp://dx.doi.org/10.1063/1.2926834AIP Conference Proceedings, v. 992, p. 1283-1288.0094-243X1551-7616http://hdl.handle.net/11449/7041110.1063/1.2926834WOS:0002558579002262-s2.0-436490911842-s2.0-43649091184.pdf773071947645123218029828064368940000-0001-5762-6424Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengAIP Conference Proceedingsinfo:eu-repo/semantics/openAccess2024-04-25T17:40:42Zoai:repositorio.unesp.br:11449/70411Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:09:59.173888Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
title Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
spellingShingle Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
Silva, Vitor D. L. [UNESP]
Cerium
Electroluminescent devices
Thin films
Tin dioxide
title_short Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
title_full Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
title_fullStr Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
title_full_unstemmed Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
title_sort Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
author Silva, Vitor D. L. [UNESP]
author_facet Silva, Vitor D. L. [UNESP]
Pineiz, Tatiane F. [UNESP]
Morais, Evandro A. [UNESP]
Pinheiro, Marco A. L. [UNESP]
Scalvi, Luis Vicente de Andrade [UNESP]
Saeki, Margarida Juri [UNESP]
Rubo, Elisabete Aparecida Andrello [UNESP]
author_role author
author2 Pineiz, Tatiane F. [UNESP]
Morais, Evandro A. [UNESP]
Pinheiro, Marco A. L. [UNESP]
Scalvi, Luis Vicente de Andrade [UNESP]
Saeki, Margarida Juri [UNESP]
Rubo, Elisabete Aparecida Andrello [UNESP]
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Silva, Vitor D. L. [UNESP]
Pineiz, Tatiane F. [UNESP]
Morais, Evandro A. [UNESP]
Pinheiro, Marco A. L. [UNESP]
Scalvi, Luis Vicente de Andrade [UNESP]
Saeki, Margarida Juri [UNESP]
Rubo, Elisabete Aparecida Andrello [UNESP]
dc.subject.por.fl_str_mv Cerium
Electroluminescent devices
Thin films
Tin dioxide
topic Cerium
Electroluminescent devices
Thin films
Tin dioxide
description Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.
publishDate 2008
dc.date.none.fl_str_mv 2008-05-21
2014-05-27T11:23:33Z
2014-05-27T11:23:33Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1063/1.2926834
AIP Conference Proceedings, v. 992, p. 1283-1288.
0094-243X
1551-7616
http://hdl.handle.net/11449/70411
10.1063/1.2926834
WOS:000255857900226
2-s2.0-43649091184
2-s2.0-43649091184.pdf
7730719476451232
1802982806436894
0000-0001-5762-6424
url http://dx.doi.org/10.1063/1.2926834
http://hdl.handle.net/11449/70411
identifier_str_mv AIP Conference Proceedings, v. 992, p. 1283-1288.
0094-243X
1551-7616
10.1063/1.2926834
WOS:000255857900226
2-s2.0-43649091184
2-s2.0-43649091184.pdf
7730719476451232
1802982806436894
0000-0001-5762-6424
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv AIP Conference Proceedings
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 1283-1288
application/pdf
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
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