Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
Autor(a) principal: | |
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Data de Publicação: | 2008 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1063/1.2926834 http://hdl.handle.net/11449/70411 |
Resumo: | Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics. |
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Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin filmsCeriumElectroluminescent devicesThin filmsTin dioxideOptical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.Dept. of Physics-FC São Paulo State University - UNESP, C. P. 473, Bauru SPPós-Graduação em Ciência e Tecnologia de Materiais (POSMAT) UNESPDept. of Chemistry and Biochemistry-IB São Paulo State University - UNESP, C.P. 510, Botucatu SPDept. of Physics-FC São Paulo State University - UNESP, C. P. 473, Bauru SPPós-Graduação em Ciência e Tecnologia de Materiais (POSMAT) UNESPDept. of Chemistry and Biochemistry-IB São Paulo State University - UNESP, C.P. 510, Botucatu SPUniversidade Estadual Paulista (Unesp)Silva, Vitor D. L. [UNESP]Pineiz, Tatiane F. [UNESP]Morais, Evandro A. [UNESP]Pinheiro, Marco A. L. [UNESP]Scalvi, Luis Vicente de Andrade [UNESP]Saeki, Margarida Juri [UNESP]Rubo, Elisabete Aparecida Andrello [UNESP]2014-05-27T11:23:33Z2014-05-27T11:23:33Z2008-05-21info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject1283-1288application/pdfhttp://dx.doi.org/10.1063/1.2926834AIP Conference Proceedings, v. 992, p. 1283-1288.0094-243X1551-7616http://hdl.handle.net/11449/7041110.1063/1.2926834WOS:0002558579002262-s2.0-436490911842-s2.0-43649091184.pdf773071947645123218029828064368940000-0001-5762-6424Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengAIP Conference Proceedingsinfo:eu-repo/semantics/openAccess2024-04-25T17:40:42Zoai:repositorio.unesp.br:11449/70411Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:09:59.173888Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films |
title |
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films |
spellingShingle |
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films Silva, Vitor D. L. [UNESP] Cerium Electroluminescent devices Thin films Tin dioxide |
title_short |
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films |
title_full |
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films |
title_fullStr |
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films |
title_full_unstemmed |
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films |
title_sort |
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films |
author |
Silva, Vitor D. L. [UNESP] |
author_facet |
Silva, Vitor D. L. [UNESP] Pineiz, Tatiane F. [UNESP] Morais, Evandro A. [UNESP] Pinheiro, Marco A. L. [UNESP] Scalvi, Luis Vicente de Andrade [UNESP] Saeki, Margarida Juri [UNESP] Rubo, Elisabete Aparecida Andrello [UNESP] |
author_role |
author |
author2 |
Pineiz, Tatiane F. [UNESP] Morais, Evandro A. [UNESP] Pinheiro, Marco A. L. [UNESP] Scalvi, Luis Vicente de Andrade [UNESP] Saeki, Margarida Juri [UNESP] Rubo, Elisabete Aparecida Andrello [UNESP] |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Silva, Vitor D. L. [UNESP] Pineiz, Tatiane F. [UNESP] Morais, Evandro A. [UNESP] Pinheiro, Marco A. L. [UNESP] Scalvi, Luis Vicente de Andrade [UNESP] Saeki, Margarida Juri [UNESP] Rubo, Elisabete Aparecida Andrello [UNESP] |
dc.subject.por.fl_str_mv |
Cerium Electroluminescent devices Thin films Tin dioxide |
topic |
Cerium Electroluminescent devices Thin films Tin dioxide |
description |
Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics. |
publishDate |
2008 |
dc.date.none.fl_str_mv |
2008-05-21 2014-05-27T11:23:33Z 2014-05-27T11:23:33Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1063/1.2926834 AIP Conference Proceedings, v. 992, p. 1283-1288. 0094-243X 1551-7616 http://hdl.handle.net/11449/70411 10.1063/1.2926834 WOS:000255857900226 2-s2.0-43649091184 2-s2.0-43649091184.pdf 7730719476451232 1802982806436894 0000-0001-5762-6424 |
url |
http://dx.doi.org/10.1063/1.2926834 http://hdl.handle.net/11449/70411 |
identifier_str_mv |
AIP Conference Proceedings, v. 992, p. 1283-1288. 0094-243X 1551-7616 10.1063/1.2926834 WOS:000255857900226 2-s2.0-43649091184 2-s2.0-43649091184.pdf 7730719476451232 1802982806436894 0000-0001-5762-6424 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
AIP Conference Proceedings |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
1283-1288 application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
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1808128326022201344 |