Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices

Detalhes bibliográficos
Autor(a) principal: Agopian, Paula Ghedini Der [UNESP]
Data de Publicação: 2020
Outros Autores: Carmo, Genilson Julião Do [UNESP], Martino, Joao Antonio, Simoen, Eddy, Collaert, Nadine
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1149/09705.0053ecst
http://hdl.handle.net/11449/198923
Resumo: In this work, the behavior of MISHEMT devices with different gate materials is analyzed. Two-gate insulator materials (Al2O3 and SiN) were analyzed through the transfer characteristic, threshold voltage, hysteresis and transconductance. Although devices with SiN insulator present smaller hysteresis, better DIBL and it is nearest to a normally off devices, the leakage current showed to be much higher than for the Al2O3 counterpart. Besides the double conduction that occurs in SiN devices results in an anomalous behavior of transconductance and consequently an unexpected behavior of threshold voltage with temperature.
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spelling Impact of gate dielectric material on basic parameters of MO(I)SHEMT devicesIn this work, the behavior of MISHEMT devices with different gate materials is analyzed. Two-gate insulator materials (Al2O3 and SiN) were analyzed through the transfer characteristic, threshold voltage, hysteresis and transconductance. Although devices with SiN insulator present smaller hysteresis, better DIBL and it is nearest to a normally off devices, the leakage current showed to be much higher than for the Al2O3 counterpart. Besides the double conduction that occurs in SiN devices results in an anomalous behavior of transconductance and consequently an unexpected behavior of threshold voltage with temperature.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)UNESP Sao Paulo State UniversityLSI/PSI/USP University of Sao PauloImecUNESP Sao Paulo State UniversityUniversidade Estadual Paulista (Unesp)Universidade de São Paulo (USP)ImecAgopian, Paula Ghedini Der [UNESP]Carmo, Genilson Julião Do [UNESP]Martino, Joao AntonioSimoen, EddyCollaert, Nadine2020-12-12T01:25:36Z2020-12-12T01:25:36Z2020-04-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject53-58http://dx.doi.org/10.1149/09705.0053ecstECS Transactions, v. 97, n. 5, p. 53-58, 2020.1938-58621938-6737http://hdl.handle.net/11449/19892310.1149/09705.0053ecst2-s2.0-8508586554404969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengECS Transactionsinfo:eu-repo/semantics/openAccess2021-10-23T10:02:12Zoai:repositorio.unesp.br:11449/198923Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T15:12:39.077914Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
title Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
spellingShingle Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
Agopian, Paula Ghedini Der [UNESP]
title_short Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
title_full Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
title_fullStr Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
title_full_unstemmed Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
title_sort Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
author Agopian, Paula Ghedini Der [UNESP]
author_facet Agopian, Paula Ghedini Der [UNESP]
Carmo, Genilson Julião Do [UNESP]
Martino, Joao Antonio
Simoen, Eddy
Collaert, Nadine
author_role author
author2 Carmo, Genilson Julião Do [UNESP]
Martino, Joao Antonio
Simoen, Eddy
Collaert, Nadine
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Universidade de São Paulo (USP)
Imec
dc.contributor.author.fl_str_mv Agopian, Paula Ghedini Der [UNESP]
Carmo, Genilson Julião Do [UNESP]
Martino, Joao Antonio
Simoen, Eddy
Collaert, Nadine
description In this work, the behavior of MISHEMT devices with different gate materials is analyzed. Two-gate insulator materials (Al2O3 and SiN) were analyzed through the transfer characteristic, threshold voltage, hysteresis and transconductance. Although devices with SiN insulator present smaller hysteresis, better DIBL and it is nearest to a normally off devices, the leakage current showed to be much higher than for the Al2O3 counterpart. Besides the double conduction that occurs in SiN devices results in an anomalous behavior of transconductance and consequently an unexpected behavior of threshold voltage with temperature.
publishDate 2020
dc.date.none.fl_str_mv 2020-12-12T01:25:36Z
2020-12-12T01:25:36Z
2020-04-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1149/09705.0053ecst
ECS Transactions, v. 97, n. 5, p. 53-58, 2020.
1938-5862
1938-6737
http://hdl.handle.net/11449/198923
10.1149/09705.0053ecst
2-s2.0-85085865544
0496909595465696
0000-0002-0886-7798
url http://dx.doi.org/10.1149/09705.0053ecst
http://hdl.handle.net/11449/198923
identifier_str_mv ECS Transactions, v. 97, n. 5, p. 53-58, 2020.
1938-5862
1938-6737
10.1149/09705.0053ecst
2-s2.0-85085865544
0496909595465696
0000-0002-0886-7798
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv ECS Transactions
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 53-58
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128480111493120

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