Improvement of gm/ID method for detection of self-heating effects

Detalhes bibliográficos
Autor(a) principal: Mori, C. A.B.
Data de Publicação: 2018
Outros Autores: Agopian, P. O.D. [UNESP], Martino, J. A.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1149/08508.0073ecst
http://hdl.handle.net/11449/171228
Resumo: This paper presents an improvement on the use of the transistor efficiency to verify the presence of self-heating effects using only DC measurements. Applying this improved method on FinFET devices allowed the establishment of a comparison of the self-heating effect among devices with different channel lengths, despite their different channel length modulation effects.
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spelling Improvement of gm/ID method for detection of self-heating effectsThis paper presents an improvement on the use of the transistor efficiency to verify the presence of self-heating effects using only DC measurements. Applying this improved method on FinFET devices allowed the establishment of a comparison of the self-heating effect among devices with different channel lengths, despite their different channel length modulation effects.LSI/PSI/USP University of Sao PauloSao Paulo State University (UNESP)Sao Paulo State University (UNESP)Universidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Mori, C. A.B.Agopian, P. O.D. [UNESP]Martino, J. A.2018-12-11T16:54:29Z2018-12-11T16:54:29Z2018-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject73-78application/pdfhttp://dx.doi.org/10.1149/08508.0073ecstECS Transactions, v. 85, n. 8, p. 73-78, 2018.1938-58621938-6737http://hdl.handle.net/11449/17122810.1149/08508.0073ecst2-s2.0-850501535712-s2.0-85050153571.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengECS Transactions0,2250,225info:eu-repo/semantics/openAccess2024-01-23T07:04:59Zoai:repositorio.unesp.br:11449/171228Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T23:43:32.262191Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Improvement of gm/ID method for detection of self-heating effects
title Improvement of gm/ID method for detection of self-heating effects
spellingShingle Improvement of gm/ID method for detection of self-heating effects
Mori, C. A.B.
title_short Improvement of gm/ID method for detection of self-heating effects
title_full Improvement of gm/ID method for detection of self-heating effects
title_fullStr Improvement of gm/ID method for detection of self-heating effects
title_full_unstemmed Improvement of gm/ID method for detection of self-heating effects
title_sort Improvement of gm/ID method for detection of self-heating effects
author Mori, C. A.B.
author_facet Mori, C. A.B.
Agopian, P. O.D. [UNESP]
Martino, J. A.
author_role author
author2 Agopian, P. O.D. [UNESP]
Martino, J. A.
author2_role author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Mori, C. A.B.
Agopian, P. O.D. [UNESP]
Martino, J. A.
description This paper presents an improvement on the use of the transistor efficiency to verify the presence of self-heating effects using only DC measurements. Applying this improved method on FinFET devices allowed the establishment of a comparison of the self-heating effect among devices with different channel lengths, despite their different channel length modulation effects.
publishDate 2018
dc.date.none.fl_str_mv 2018-12-11T16:54:29Z
2018-12-11T16:54:29Z
2018-01-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1149/08508.0073ecst
ECS Transactions, v. 85, n. 8, p. 73-78, 2018.
1938-5862
1938-6737
http://hdl.handle.net/11449/171228
10.1149/08508.0073ecst
2-s2.0-85050153571
2-s2.0-85050153571.pdf
url http://dx.doi.org/10.1149/08508.0073ecst
http://hdl.handle.net/11449/171228
identifier_str_mv ECS Transactions, v. 85, n. 8, p. 73-78, 2018.
1938-5862
1938-6737
10.1149/08508.0073ecst
2-s2.0-85050153571
2-s2.0-85050153571.pdf
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv ECS Transactions
0,225
0,225
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 73-78
application/pdf
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129547097341952

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