Electronic mechanism for resistive switching in metal/insulator/metal nanodevices
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1088/1361-6463/ab7a58 http://hdl.handle.net/11449/196928 |
Resumo: | Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such switching has been rationalized by ion drift models, or changes in electronic states, but the underlying physical mechanism is poorly understood. We propose a new model based on electrostatics to explain multiple resistive states in memristors that contain large defect densities. The different resistive states are due to spontaneously charged states of the insulator 'storage medium', characterized by different 'band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. We show that these multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator 'storage medium'. |
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Repositório Institucional da UNESP |
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Electronic mechanism for resistive switching in metal/insulator/metal nanodevicesresistive memoryelectronic switchingnanodevicememristorPassing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such switching has been rationalized by ion drift models, or changes in electronic states, but the underlying physical mechanism is poorly understood. We propose a new model based on electrostatics to explain multiple resistive states in memristors that contain large defect densities. The different resistive states are due to spontaneously charged states of the insulator 'storage medium', characterized by different 'band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. We show that these multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator 'storage medium'.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Univ Fed ABC, Ctr Ciencias Nat & Humanas, Santo Andre, SP, BrazilYokohama Natl Univ, Dept Phys, Yokohama, Kanagawa, JapanBrazillian Nanotechnol Natl Lab LNNano CNPEM, BR-13083970 Campinas, SP, BrazilFlextron Inst Tecnol, BR-13918900 Jaguariuna, BrazilUniv Estadual Paulista, Inst Fis Teor, Sao Paulo, SP, BrazilUniv Estadual Paulista, Inst Fis Teor, Sao Paulo, SP, BrazilFAPESP: 2011/21719-8FAPESP: 2015/05830-7FAPESP: 13/22577-8Iop Publishing LtdUniversidade Federal do ABC (UFABC)Yokohama Natl UnivBrazillian Nanotechnol Natl Lab LNNano CNPEMFlextron Inst TecnolUniversidade Estadual Paulista (Unesp)Raebiger, HannesPadilha, Antonio Claudio M.Rocha, Alexandre Reily [UNESP]Dalpian, Gustavo M.2020-12-10T20:00:39Z2020-12-10T20:00:39Z2020-07-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article9http://dx.doi.org/10.1088/1361-6463/ab7a58Journal Of Physics D-applied Physics. Bristol: Iop Publishing Ltd, v. 53, n. 29, 9 p., 2020.0022-3727http://hdl.handle.net/11449/19692810.1088/1361-6463/ab7a58WOS:000536815200001Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal Of Physics D-applied Physicsinfo:eu-repo/semantics/openAccess2021-10-23T10:11:17Zoai:repositorio.unesp.br:11449/196928Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:02:36.966884Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Electronic mechanism for resistive switching in metal/insulator/metal nanodevices |
title |
Electronic mechanism for resistive switching in metal/insulator/metal nanodevices |
spellingShingle |
Electronic mechanism for resistive switching in metal/insulator/metal nanodevices Raebiger, Hannes resistive memory electronic switching nanodevice memristor |
title_short |
Electronic mechanism for resistive switching in metal/insulator/metal nanodevices |
title_full |
Electronic mechanism for resistive switching in metal/insulator/metal nanodevices |
title_fullStr |
Electronic mechanism for resistive switching in metal/insulator/metal nanodevices |
title_full_unstemmed |
Electronic mechanism for resistive switching in metal/insulator/metal nanodevices |
title_sort |
Electronic mechanism for resistive switching in metal/insulator/metal nanodevices |
author |
Raebiger, Hannes |
author_facet |
Raebiger, Hannes Padilha, Antonio Claudio M. Rocha, Alexandre Reily [UNESP] Dalpian, Gustavo M. |
author_role |
author |
author2 |
Padilha, Antonio Claudio M. Rocha, Alexandre Reily [UNESP] Dalpian, Gustavo M. |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade Federal do ABC (UFABC) Yokohama Natl Univ Brazillian Nanotechnol Natl Lab LNNano CNPEM Flextron Inst Tecnol Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Raebiger, Hannes Padilha, Antonio Claudio M. Rocha, Alexandre Reily [UNESP] Dalpian, Gustavo M. |
dc.subject.por.fl_str_mv |
resistive memory electronic switching nanodevice memristor |
topic |
resistive memory electronic switching nanodevice memristor |
description |
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such switching has been rationalized by ion drift models, or changes in electronic states, but the underlying physical mechanism is poorly understood. We propose a new model based on electrostatics to explain multiple resistive states in memristors that contain large defect densities. The different resistive states are due to spontaneously charged states of the insulator 'storage medium', characterized by different 'band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. We show that these multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator 'storage medium'. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-12-10T20:00:39Z 2020-12-10T20:00:39Z 2020-07-15 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1088/1361-6463/ab7a58 Journal Of Physics D-applied Physics. Bristol: Iop Publishing Ltd, v. 53, n. 29, 9 p., 2020. 0022-3727 http://hdl.handle.net/11449/196928 10.1088/1361-6463/ab7a58 WOS:000536815200001 |
url |
http://dx.doi.org/10.1088/1361-6463/ab7a58 http://hdl.handle.net/11449/196928 |
identifier_str_mv |
Journal Of Physics D-applied Physics. Bristol: Iop Publishing Ltd, v. 53, n. 29, 9 p., 2020. 0022-3727 10.1088/1361-6463/ab7a58 WOS:000536815200001 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal Of Physics D-applied Physics |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
9 |
dc.publisher.none.fl_str_mv |
Iop Publishing Ltd |
publisher.none.fl_str_mv |
Iop Publishing Ltd |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129014490988544 |