Electronic mechanism for resistive switching in metal/insulator/metal nanodevices

Detalhes bibliográficos
Autor(a) principal: Raebiger, Hannes
Data de Publicação: 2020
Outros Autores: Padilha, Antonio Claudio M., Rocha, Alexandre Reily [UNESP], Dalpian, Gustavo M.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1088/1361-6463/ab7a58
http://hdl.handle.net/11449/196928
Resumo: Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such switching has been rationalized by ion drift models, or changes in electronic states, but the underlying physical mechanism is poorly understood. We propose a new model based on electrostatics to explain multiple resistive states in memristors that contain large defect densities. The different resistive states are due to spontaneously charged states of the insulator 'storage medium', characterized by different 'band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. We show that these multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator 'storage medium'.
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spelling Electronic mechanism for resistive switching in metal/insulator/metal nanodevicesresistive memoryelectronic switchingnanodevicememristorPassing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such switching has been rationalized by ion drift models, or changes in electronic states, but the underlying physical mechanism is poorly understood. We propose a new model based on electrostatics to explain multiple resistive states in memristors that contain large defect densities. The different resistive states are due to spontaneously charged states of the insulator 'storage medium', characterized by different 'band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. We show that these multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator 'storage medium'.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Univ Fed ABC, Ctr Ciencias Nat & Humanas, Santo Andre, SP, BrazilYokohama Natl Univ, Dept Phys, Yokohama, Kanagawa, JapanBrazillian Nanotechnol Natl Lab LNNano CNPEM, BR-13083970 Campinas, SP, BrazilFlextron Inst Tecnol, BR-13918900 Jaguariuna, BrazilUniv Estadual Paulista, Inst Fis Teor, Sao Paulo, SP, BrazilUniv Estadual Paulista, Inst Fis Teor, Sao Paulo, SP, BrazilFAPESP: 2011/21719-8FAPESP: 2015/05830-7FAPESP: 13/22577-8Iop Publishing LtdUniversidade Federal do ABC (UFABC)Yokohama Natl UnivBrazillian Nanotechnol Natl Lab LNNano CNPEMFlextron Inst TecnolUniversidade Estadual Paulista (Unesp)Raebiger, HannesPadilha, Antonio Claudio M.Rocha, Alexandre Reily [UNESP]Dalpian, Gustavo M.2020-12-10T20:00:39Z2020-12-10T20:00:39Z2020-07-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article9http://dx.doi.org/10.1088/1361-6463/ab7a58Journal Of Physics D-applied Physics. Bristol: Iop Publishing Ltd, v. 53, n. 29, 9 p., 2020.0022-3727http://hdl.handle.net/11449/19692810.1088/1361-6463/ab7a58WOS:000536815200001Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal Of Physics D-applied Physicsinfo:eu-repo/semantics/openAccess2021-10-23T10:11:17Zoai:repositorio.unesp.br:11449/196928Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:02:36.966884Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Electronic mechanism for resistive switching in metal/insulator/metal nanodevices
title Electronic mechanism for resistive switching in metal/insulator/metal nanodevices
spellingShingle Electronic mechanism for resistive switching in metal/insulator/metal nanodevices
Raebiger, Hannes
resistive memory
electronic switching
nanodevice
memristor
title_short Electronic mechanism for resistive switching in metal/insulator/metal nanodevices
title_full Electronic mechanism for resistive switching in metal/insulator/metal nanodevices
title_fullStr Electronic mechanism for resistive switching in metal/insulator/metal nanodevices
title_full_unstemmed Electronic mechanism for resistive switching in metal/insulator/metal nanodevices
title_sort Electronic mechanism for resistive switching in metal/insulator/metal nanodevices
author Raebiger, Hannes
author_facet Raebiger, Hannes
Padilha, Antonio Claudio M.
Rocha, Alexandre Reily [UNESP]
Dalpian, Gustavo M.
author_role author
author2 Padilha, Antonio Claudio M.
Rocha, Alexandre Reily [UNESP]
Dalpian, Gustavo M.
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Federal do ABC (UFABC)
Yokohama Natl Univ
Brazillian Nanotechnol Natl Lab LNNano CNPEM
Flextron Inst Tecnol
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Raebiger, Hannes
Padilha, Antonio Claudio M.
Rocha, Alexandre Reily [UNESP]
Dalpian, Gustavo M.
dc.subject.por.fl_str_mv resistive memory
electronic switching
nanodevice
memristor
topic resistive memory
electronic switching
nanodevice
memristor
description Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such switching has been rationalized by ion drift models, or changes in electronic states, but the underlying physical mechanism is poorly understood. We propose a new model based on electrostatics to explain multiple resistive states in memristors that contain large defect densities. The different resistive states are due to spontaneously charged states of the insulator 'storage medium', characterized by different 'band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. We show that these multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator 'storage medium'.
publishDate 2020
dc.date.none.fl_str_mv 2020-12-10T20:00:39Z
2020-12-10T20:00:39Z
2020-07-15
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1088/1361-6463/ab7a58
Journal Of Physics D-applied Physics. Bristol: Iop Publishing Ltd, v. 53, n. 29, 9 p., 2020.
0022-3727
http://hdl.handle.net/11449/196928
10.1088/1361-6463/ab7a58
WOS:000536815200001
url http://dx.doi.org/10.1088/1361-6463/ab7a58
http://hdl.handle.net/11449/196928
identifier_str_mv Journal Of Physics D-applied Physics. Bristol: Iop Publishing Ltd, v. 53, n. 29, 9 p., 2020.
0022-3727
10.1088/1361-6463/ab7a58
WOS:000536815200001
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal Of Physics D-applied Physics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 9
dc.publisher.none.fl_str_mv Iop Publishing Ltd
publisher.none.fl_str_mv Iop Publishing Ltd
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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