Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contact

Detalhes bibliográficos
Autor(a) principal: Bertoldo, Luis H. T. [UNESP]
Data de Publicação: 2022
Outros Autores: Nogueira, Gabriel L. [UNESP], Vieira, Douglas H. [UNESP], Klem, Maykel S. [UNESP], Ozório, Maíza S. [UNESP], Alves, Neri [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1007/s10854-022-08371-x
http://hdl.handle.net/11449/241040
Resumo: The search for good electrodes processed by solution has interested several niches to produce printed solar cells, lighting emitting diodes, transistors, and photodetectors. In this context, carbon nanotube (CNT) has been reported as a promising electrode material, being suitable for several printing techniques such as inkjet, screen-printing, and spray-coating. Here, we present a successfully manufactured spray-deposited diode based on the Schottky junction between multi-walled carbon nanotubes (MWCNTs) and zinc oxide nanoparticles (ZnO-NPs), both deposited by spray. Using analytical methods, we estimated the diode series resistance as 6.2 kΩ and the ideality factor as 2.2. The good morphological characteristics of the ZnO-NP and MWCNT films resulted in a good interface, allowing the junction to achieve a high effective Schottky barrier height of 0.82 eV, high rectification ratio of 1 × 104, and low turn-on voltage of 0.55 V.
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spelling Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contactThe search for good electrodes processed by solution has interested several niches to produce printed solar cells, lighting emitting diodes, transistors, and photodetectors. In this context, carbon nanotube (CNT) has been reported as a promising electrode material, being suitable for several printing techniques such as inkjet, screen-printing, and spray-coating. Here, we present a successfully manufactured spray-deposited diode based on the Schottky junction between multi-walled carbon nanotubes (MWCNTs) and zinc oxide nanoparticles (ZnO-NPs), both deposited by spray. Using analytical methods, we estimated the diode series resistance as 6.2 kΩ and the ideality factor as 2.2. The good morphological characteristics of the ZnO-NP and MWCNT films resulted in a good interface, allowing the junction to achieve a high effective Schottky barrier height of 0.82 eV, high rectification ratio of 1 × 104, and low turn-on voltage of 0.55 V.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Department of Physics School of Technology and Sciences (FCT) São Paulo State University – UNESP, SPDepartment of Physics School of Technology and Sciences (FCT) São Paulo State University – UNESP, SPFAPESP: 2018/02037-2FAPESP: 2018/02604-4FAPESP: 2020/12282-4FAPESP: 2021/01548-6Universidade Estadual Paulista (UNESP)Bertoldo, Luis H. T. [UNESP]Nogueira, Gabriel L. [UNESP]Vieira, Douglas H. [UNESP]Klem, Maykel S. [UNESP]Ozório, Maíza S. [UNESP]Alves, Neri [UNESP]2023-03-01T20:44:23Z2023-03-01T20:44:23Z2022-06-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article14508-14518http://dx.doi.org/10.1007/s10854-022-08371-xJournal of Materials Science: Materials in Electronics, v. 33, n. 18, p. 14508-14518, 2022.1573-482X0957-4522http://hdl.handle.net/11449/24104010.1007/s10854-022-08371-x2-s2.0-85130728321Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Materials Science: Materials in Electronicsinfo:eu-repo/semantics/openAccess2024-06-18T18:18:24Zoai:repositorio.unesp.br:11449/241040Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-06T00:11:48.548430Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contact
title Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contact
spellingShingle Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contact
Bertoldo, Luis H. T. [UNESP]
title_short Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contact
title_full Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contact
title_fullStr Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contact
title_full_unstemmed Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contact
title_sort Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contact
author Bertoldo, Luis H. T. [UNESP]
author_facet Bertoldo, Luis H. T. [UNESP]
Nogueira, Gabriel L. [UNESP]
Vieira, Douglas H. [UNESP]
Klem, Maykel S. [UNESP]
Ozório, Maíza S. [UNESP]
Alves, Neri [UNESP]
author_role author
author2 Nogueira, Gabriel L. [UNESP]
Vieira, Douglas H. [UNESP]
Klem, Maykel S. [UNESP]
Ozório, Maíza S. [UNESP]
Alves, Neri [UNESP]
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
dc.contributor.author.fl_str_mv Bertoldo, Luis H. T. [UNESP]
Nogueira, Gabriel L. [UNESP]
Vieira, Douglas H. [UNESP]
Klem, Maykel S. [UNESP]
Ozório, Maíza S. [UNESP]
Alves, Neri [UNESP]
description The search for good electrodes processed by solution has interested several niches to produce printed solar cells, lighting emitting diodes, transistors, and photodetectors. In this context, carbon nanotube (CNT) has been reported as a promising electrode material, being suitable for several printing techniques such as inkjet, screen-printing, and spray-coating. Here, we present a successfully manufactured spray-deposited diode based on the Schottky junction between multi-walled carbon nanotubes (MWCNTs) and zinc oxide nanoparticles (ZnO-NPs), both deposited by spray. Using analytical methods, we estimated the diode series resistance as 6.2 kΩ and the ideality factor as 2.2. The good morphological characteristics of the ZnO-NP and MWCNT films resulted in a good interface, allowing the junction to achieve a high effective Schottky barrier height of 0.82 eV, high rectification ratio of 1 × 104, and low turn-on voltage of 0.55 V.
publishDate 2022
dc.date.none.fl_str_mv 2022-06-01
2023-03-01T20:44:23Z
2023-03-01T20:44:23Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1007/s10854-022-08371-x
Journal of Materials Science: Materials in Electronics, v. 33, n. 18, p. 14508-14518, 2022.
1573-482X
0957-4522
http://hdl.handle.net/11449/241040
10.1007/s10854-022-08371-x
2-s2.0-85130728321
url http://dx.doi.org/10.1007/s10854-022-08371-x
http://hdl.handle.net/11449/241040
identifier_str_mv Journal of Materials Science: Materials in Electronics, v. 33, n. 18, p. 14508-14518, 2022.
1573-482X
0957-4522
10.1007/s10854-022-08371-x
2-s2.0-85130728321
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal of Materials Science: Materials in Electronics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 14508-14518
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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