Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative

Detalhes bibliográficos
Autor(a) principal: Olivati, Clarissa A. [UNESP]
Data de Publicação: 2005
Outros Autores: Ferreira, Marystela [UNESP], Machado, Angelita M., Akcelrud, Leni, Giacometti, José A. [UNESP]
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/ISE.2005.1612418
http://hdl.handle.net/11449/68536
Resumo: Polyfluorenes are promising materials for the emitting layer of polymer light emitting devices (PLEDs) with blue emission. In this work, we report on PLEDs fabricated with Langmuir-Blodgett (LB) films of a polyfluorene derivative, namely poly(9,9-di-hexylfluorenediyl vinylene-alt-1,4-phenylenevinylene) (PDHF-PV). Y-type LB films were transferred onto ITO substrates at a surface pressure of 35 mN m-1 and with dipping speed of 3 mm min -1. A thin aluminum layer was evaporated on top of the LB film, thus yielding a sandwich structure (ITO/PDHF-PV(LB)/Al). Current-voltage (I vs V) measurements indicate that the device displays a classical behavior of a rectifying diode. The threshold value is approximately 5 V, and the onset for visible light emission occurs at ca. 10 V. From the a.c. electrical responses we infer that the active layer has a typical behavior of PLEDs where the real component of ac conductivity obeys a power-law with the frequency. Cole-Cole plots (Im(Z) vs. Re(Z)) for the device exhibit a series of semicircles, the diameter of which decreases with increasing forward bias. This PLED structure is modeled by a parallel resistance and capacitance combination, representing the dominant mechanisms of charge transport and polarization in the organic layer, in series with a resistance representing the ITO contact. Overall, the results presented here demonstrate the feasibility of LEDs made with LB films of PDHF-PV.
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spelling Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivativeDerivativesLangmuir Blodgett filmsLight emitting diodesPolymer filmsSandwich structuresSubstratesBlue emissionsPolyfluorene derivativePolymer light emitting devices (PLED)Surface pressureInorganic polymersPolyfluorenes are promising materials for the emitting layer of polymer light emitting devices (PLEDs) with blue emission. In this work, we report on PLEDs fabricated with Langmuir-Blodgett (LB) films of a polyfluorene derivative, namely poly(9,9-di-hexylfluorenediyl vinylene-alt-1,4-phenylenevinylene) (PDHF-PV). Y-type LB films were transferred onto ITO substrates at a surface pressure of 35 mN m-1 and with dipping speed of 3 mm min -1. A thin aluminum layer was evaporated on top of the LB film, thus yielding a sandwich structure (ITO/PDHF-PV(LB)/Al). Current-voltage (I vs V) measurements indicate that the device displays a classical behavior of a rectifying diode. The threshold value is approximately 5 V, and the onset for visible light emission occurs at ca. 10 V. From the a.c. electrical responses we infer that the active layer has a typical behavior of PLEDs where the real component of ac conductivity obeys a power-law with the frequency. Cole-Cole plots (Im(Z) vs. Re(Z)) for the device exhibit a series of semicircles, the diameter of which decreases with increasing forward bias. This PLED structure is modeled by a parallel resistance and capacitance combination, representing the dominant mechanisms of charge transport and polarization in the organic layer, in series with a resistance representing the ITO contact. Overall, the results presented here demonstrate the feasibility of LEDs made with LB films of PDHF-PV.Faculdade de Ciências e Tecnologia Unesp, CP 467, 19060-900, Presidente Prudente/SPUFPR Depto. Química, CP 19081, 81531-900, Curitiba/PRIFSC USP, CP 369, 13590-580, São Carlos/SPFaculdade de Ciências e Tecnologia Unesp, CP 467, 19060-900, Presidente Prudente/SPUniversidade Estadual Paulista (Unesp)Universidade Federal do Paraná (UFPR)Universidade de São Paulo (USP)Olivati, Clarissa A. [UNESP]Ferreira, Marystela [UNESP]Machado, Angelita M.Akcelrud, LeniGiacometti, José A. [UNESP]2014-05-27T11:21:42Z2014-05-27T11:21:42Z2005-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject438-440http://dx.doi.org/10.1109/ISE.2005.1612418Proceedings - International Symposium on Electrets, v. 2005, p. 438-440.http://hdl.handle.net/11449/6853610.1109/ISE.2005.1612418WOS:0002367645001152-s2.0-3384774298198222128086514150000-0002-0114-6795Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengProceedings - International Symposium on Electretsinfo:eu-repo/semantics/openAccess2024-06-19T12:46:01Zoai:repositorio.unesp.br:11449/68536Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:06:29.551763Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative
title Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative
spellingShingle Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative
Olivati, Clarissa A. [UNESP]
Derivatives
Langmuir Blodgett films
Light emitting diodes
Polymer films
Sandwich structures
Substrates
Blue emissions
Polyfluorene derivative
Polymer light emitting devices (PLED)
Surface pressure
Inorganic polymers
title_short Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative
title_full Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative
title_fullStr Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative
title_full_unstemmed Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative
title_sort Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative
author Olivati, Clarissa A. [UNESP]
author_facet Olivati, Clarissa A. [UNESP]
Ferreira, Marystela [UNESP]
Machado, Angelita M.
Akcelrud, Leni
Giacometti, José A. [UNESP]
author_role author
author2 Ferreira, Marystela [UNESP]
Machado, Angelita M.
Akcelrud, Leni
Giacometti, José A. [UNESP]
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Universidade Federal do Paraná (UFPR)
Universidade de São Paulo (USP)
dc.contributor.author.fl_str_mv Olivati, Clarissa A. [UNESP]
Ferreira, Marystela [UNESP]
Machado, Angelita M.
Akcelrud, Leni
Giacometti, José A. [UNESP]
dc.subject.por.fl_str_mv Derivatives
Langmuir Blodgett films
Light emitting diodes
Polymer films
Sandwich structures
Substrates
Blue emissions
Polyfluorene derivative
Polymer light emitting devices (PLED)
Surface pressure
Inorganic polymers
topic Derivatives
Langmuir Blodgett films
Light emitting diodes
Polymer films
Sandwich structures
Substrates
Blue emissions
Polyfluorene derivative
Polymer light emitting devices (PLED)
Surface pressure
Inorganic polymers
description Polyfluorenes are promising materials for the emitting layer of polymer light emitting devices (PLEDs) with blue emission. In this work, we report on PLEDs fabricated with Langmuir-Blodgett (LB) films of a polyfluorene derivative, namely poly(9,9-di-hexylfluorenediyl vinylene-alt-1,4-phenylenevinylene) (PDHF-PV). Y-type LB films were transferred onto ITO substrates at a surface pressure of 35 mN m-1 and with dipping speed of 3 mm min -1. A thin aluminum layer was evaporated on top of the LB film, thus yielding a sandwich structure (ITO/PDHF-PV(LB)/Al). Current-voltage (I vs V) measurements indicate that the device displays a classical behavior of a rectifying diode. The threshold value is approximately 5 V, and the onset for visible light emission occurs at ca. 10 V. From the a.c. electrical responses we infer that the active layer has a typical behavior of PLEDs where the real component of ac conductivity obeys a power-law with the frequency. Cole-Cole plots (Im(Z) vs. Re(Z)) for the device exhibit a series of semicircles, the diameter of which decreases with increasing forward bias. This PLED structure is modeled by a parallel resistance and capacitance combination, representing the dominant mechanisms of charge transport and polarization in the organic layer, in series with a resistance representing the ITO contact. Overall, the results presented here demonstrate the feasibility of LEDs made with LB films of PDHF-PV.
publishDate 2005
dc.date.none.fl_str_mv 2005-12-01
2014-05-27T11:21:42Z
2014-05-27T11:21:42Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/ISE.2005.1612418
Proceedings - International Symposium on Electrets, v. 2005, p. 438-440.
http://hdl.handle.net/11449/68536
10.1109/ISE.2005.1612418
WOS:000236764500115
2-s2.0-33847742981
9822212808651415
0000-0002-0114-6795
url http://dx.doi.org/10.1109/ISE.2005.1612418
http://hdl.handle.net/11449/68536
identifier_str_mv Proceedings - International Symposium on Electrets, v. 2005, p. 438-440.
10.1109/ISE.2005.1612418
WOS:000236764500115
2-s2.0-33847742981
9822212808651415
0000-0002-0114-6795
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Proceedings - International Symposium on Electrets
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 438-440
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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