Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative
Autor(a) principal: | |
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Data de Publicação: | 2005 |
Outros Autores: | , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/ISE.2005.1612418 http://hdl.handle.net/11449/68536 |
Resumo: | Polyfluorenes are promising materials for the emitting layer of polymer light emitting devices (PLEDs) with blue emission. In this work, we report on PLEDs fabricated with Langmuir-Blodgett (LB) films of a polyfluorene derivative, namely poly(9,9-di-hexylfluorenediyl vinylene-alt-1,4-phenylenevinylene) (PDHF-PV). Y-type LB films were transferred onto ITO substrates at a surface pressure of 35 mN m-1 and with dipping speed of 3 mm min -1. A thin aluminum layer was evaporated on top of the LB film, thus yielding a sandwich structure (ITO/PDHF-PV(LB)/Al). Current-voltage (I vs V) measurements indicate that the device displays a classical behavior of a rectifying diode. The threshold value is approximately 5 V, and the onset for visible light emission occurs at ca. 10 V. From the a.c. electrical responses we infer that the active layer has a typical behavior of PLEDs where the real component of ac conductivity obeys a power-law with the frequency. Cole-Cole plots (Im(Z) vs. Re(Z)) for the device exhibit a series of semicircles, the diameter of which decreases with increasing forward bias. This PLED structure is modeled by a parallel resistance and capacitance combination, representing the dominant mechanisms of charge transport and polarization in the organic layer, in series with a resistance representing the ITO contact. Overall, the results presented here demonstrate the feasibility of LEDs made with LB films of PDHF-PV. |
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Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivativeDerivativesLangmuir Blodgett filmsLight emitting diodesPolymer filmsSandwich structuresSubstratesBlue emissionsPolyfluorene derivativePolymer light emitting devices (PLED)Surface pressureInorganic polymersPolyfluorenes are promising materials for the emitting layer of polymer light emitting devices (PLEDs) with blue emission. In this work, we report on PLEDs fabricated with Langmuir-Blodgett (LB) films of a polyfluorene derivative, namely poly(9,9-di-hexylfluorenediyl vinylene-alt-1,4-phenylenevinylene) (PDHF-PV). Y-type LB films were transferred onto ITO substrates at a surface pressure of 35 mN m-1 and with dipping speed of 3 mm min -1. A thin aluminum layer was evaporated on top of the LB film, thus yielding a sandwich structure (ITO/PDHF-PV(LB)/Al). Current-voltage (I vs V) measurements indicate that the device displays a classical behavior of a rectifying diode. The threshold value is approximately 5 V, and the onset for visible light emission occurs at ca. 10 V. From the a.c. electrical responses we infer that the active layer has a typical behavior of PLEDs where the real component of ac conductivity obeys a power-law with the frequency. Cole-Cole plots (Im(Z) vs. Re(Z)) for the device exhibit a series of semicircles, the diameter of which decreases with increasing forward bias. This PLED structure is modeled by a parallel resistance and capacitance combination, representing the dominant mechanisms of charge transport and polarization in the organic layer, in series with a resistance representing the ITO contact. Overall, the results presented here demonstrate the feasibility of LEDs made with LB films of PDHF-PV.Faculdade de Ciências e Tecnologia Unesp, CP 467, 19060-900, Presidente Prudente/SPUFPR Depto. Química, CP 19081, 81531-900, Curitiba/PRIFSC USP, CP 369, 13590-580, São Carlos/SPFaculdade de Ciências e Tecnologia Unesp, CP 467, 19060-900, Presidente Prudente/SPUniversidade Estadual Paulista (Unesp)Universidade Federal do Paraná (UFPR)Universidade de São Paulo (USP)Olivati, Clarissa A. [UNESP]Ferreira, Marystela [UNESP]Machado, Angelita M.Akcelrud, LeniGiacometti, José A. [UNESP]2014-05-27T11:21:42Z2014-05-27T11:21:42Z2005-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject438-440http://dx.doi.org/10.1109/ISE.2005.1612418Proceedings - International Symposium on Electrets, v. 2005, p. 438-440.http://hdl.handle.net/11449/6853610.1109/ISE.2005.1612418WOS:0002367645001152-s2.0-3384774298198222128086514150000-0002-0114-6795Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengProceedings - International Symposium on Electretsinfo:eu-repo/semantics/openAccess2024-06-19T12:46:01Zoai:repositorio.unesp.br:11449/68536Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:06:29.551763Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative |
title |
Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative |
spellingShingle |
Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative Olivati, Clarissa A. [UNESP] Derivatives Langmuir Blodgett films Light emitting diodes Polymer films Sandwich structures Substrates Blue emissions Polyfluorene derivative Polymer light emitting devices (PLED) Surface pressure Inorganic polymers |
title_short |
Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative |
title_full |
Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative |
title_fullStr |
Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative |
title_full_unstemmed |
Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative |
title_sort |
Polymer light emitting devices with Langmuir Blodgett (LB) films of a polyfluorene derivative |
author |
Olivati, Clarissa A. [UNESP] |
author_facet |
Olivati, Clarissa A. [UNESP] Ferreira, Marystela [UNESP] Machado, Angelita M. Akcelrud, Leni Giacometti, José A. [UNESP] |
author_role |
author |
author2 |
Ferreira, Marystela [UNESP] Machado, Angelita M. Akcelrud, Leni Giacometti, José A. [UNESP] |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Universidade Federal do Paraná (UFPR) Universidade de São Paulo (USP) |
dc.contributor.author.fl_str_mv |
Olivati, Clarissa A. [UNESP] Ferreira, Marystela [UNESP] Machado, Angelita M. Akcelrud, Leni Giacometti, José A. [UNESP] |
dc.subject.por.fl_str_mv |
Derivatives Langmuir Blodgett films Light emitting diodes Polymer films Sandwich structures Substrates Blue emissions Polyfluorene derivative Polymer light emitting devices (PLED) Surface pressure Inorganic polymers |
topic |
Derivatives Langmuir Blodgett films Light emitting diodes Polymer films Sandwich structures Substrates Blue emissions Polyfluorene derivative Polymer light emitting devices (PLED) Surface pressure Inorganic polymers |
description |
Polyfluorenes are promising materials for the emitting layer of polymer light emitting devices (PLEDs) with blue emission. In this work, we report on PLEDs fabricated with Langmuir-Blodgett (LB) films of a polyfluorene derivative, namely poly(9,9-di-hexylfluorenediyl vinylene-alt-1,4-phenylenevinylene) (PDHF-PV). Y-type LB films were transferred onto ITO substrates at a surface pressure of 35 mN m-1 and with dipping speed of 3 mm min -1. A thin aluminum layer was evaporated on top of the LB film, thus yielding a sandwich structure (ITO/PDHF-PV(LB)/Al). Current-voltage (I vs V) measurements indicate that the device displays a classical behavior of a rectifying diode. The threshold value is approximately 5 V, and the onset for visible light emission occurs at ca. 10 V. From the a.c. electrical responses we infer that the active layer has a typical behavior of PLEDs where the real component of ac conductivity obeys a power-law with the frequency. Cole-Cole plots (Im(Z) vs. Re(Z)) for the device exhibit a series of semicircles, the diameter of which decreases with increasing forward bias. This PLED structure is modeled by a parallel resistance and capacitance combination, representing the dominant mechanisms of charge transport and polarization in the organic layer, in series with a resistance representing the ITO contact. Overall, the results presented here demonstrate the feasibility of LEDs made with LB films of PDHF-PV. |
publishDate |
2005 |
dc.date.none.fl_str_mv |
2005-12-01 2014-05-27T11:21:42Z 2014-05-27T11:21:42Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/ISE.2005.1612418 Proceedings - International Symposium on Electrets, v. 2005, p. 438-440. http://hdl.handle.net/11449/68536 10.1109/ISE.2005.1612418 WOS:000236764500115 2-s2.0-33847742981 9822212808651415 0000-0002-0114-6795 |
url |
http://dx.doi.org/10.1109/ISE.2005.1612418 http://hdl.handle.net/11449/68536 |
identifier_str_mv |
Proceedings - International Symposium on Electrets, v. 2005, p. 438-440. 10.1109/ISE.2005.1612418 WOS:000236764500115 2-s2.0-33847742981 9822212808651415 0000-0002-0114-6795 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Proceedings - International Symposium on Electrets |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
438-440 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
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1808129019950923776 |