Raman investigation of structural photoinduced irreversible changes of Ga10Ge25S65 chalcogenide glasses
Autor(a) principal: | |
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Data de Publicação: | 2001 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://hdl.handle.net/11449/231657 |
Resumo: | The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga10Ge25S65 glasses has been studied through their effects on the structure and optical properties. To evaluate the photostructural change infrared and Raman spectra for bulk Ga10Ge25S65 glasses have been measured before and after exposure. The Raman spectra are interpreted in terms of models in which the Ge atoms are fourfold coordinated and the S atoms are two fold coordinated. The observed changes in the spectral region of (S-S) stretching vibration (470-490 cm-1) is a direct evidence for the occurrence of important structural changes in local bonding configuration caused by optical irradiation. It is shown that the dominant photostrucural changes are chain formation tendency of the chalcogenide atoms under the laser irradiation rather than rings. |
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Raman investigation of structural photoinduced irreversible changes of Ga10Ge25S65 chalcogenide glassesChalcogenideGaGeS bulk glassPhotoexpansionRaman spectraThe influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga10Ge25S65 glasses has been studied through their effects on the structure and optical properties. To evaluate the photostructural change infrared and Raman spectra for bulk Ga10Ge25S65 glasses have been measured before and after exposure. The Raman spectra are interpreted in terms of models in which the Ge atoms are fourfold coordinated and the S atoms are two fold coordinated. The observed changes in the spectral region of (S-S) stretching vibration (470-490 cm-1) is a direct evidence for the occurrence of important structural changes in local bonding configuration caused by optical irradiation. It is shown that the dominant photostrucural changes are chain formation tendency of the chalcogenide atoms under the laser irradiation rather than rings.Inst. de Fis. de São Carlos Universidade de São Paulo, C.P. 369, CEP: 13560-970, São Carlos, SPLab. of Inorg. Mat. IIC ASCR and ICT, Pelleova 24, Prague 6Instituto de Química UNESP, C.P. 355, CEP: 14801-970, Araraquara, SPDepto. de Química Universidade Federal de Juiz de Fora, Juiz de Fora, MGEsc. de Engenharia de S. Carlos Universidade de São Paulo, C.P. 369, CEP: 13560-970, São Carlos, SPInstituto de Química UNESP, C.P. 355, CEP: 14801-970, Araraquara, SPUniversidade de São Paulo (USP)Lab. of Inorg. Mat. IIC ASCR and ICTUniversidade Estadual Paulista (UNESP)Universidade Federal de Juiz de ForaMessaddeq, S. H.Li, M. SuiLezal, D.Messaddeq, Y. [UNESP]Ribeiro, S. J.L. [UNESP]Oliveira, L. F.C.Rollo, J. M.D.A.2022-04-29T08:46:49Z2022-04-29T08:46:49Z2001-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article295-302Journal of Optoelectronics and Advanced Materials, v. 3, n. 2, p. 295-302, 2001.1454-4164http://hdl.handle.net/11449/2316572-s2.0-0001685467Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Optoelectronics and Advanced Materialsinfo:eu-repo/semantics/openAccess2022-04-29T08:46:49Zoai:repositorio.unesp.br:11449/231657Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462022-04-29T08:46:49Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Raman investigation of structural photoinduced irreversible changes of Ga10Ge25S65 chalcogenide glasses |
title |
Raman investigation of structural photoinduced irreversible changes of Ga10Ge25S65 chalcogenide glasses |
spellingShingle |
Raman investigation of structural photoinduced irreversible changes of Ga10Ge25S65 chalcogenide glasses Messaddeq, S. H. Chalcogenide GaGeS bulk glass Photoexpansion Raman spectra |
title_short |
Raman investigation of structural photoinduced irreversible changes of Ga10Ge25S65 chalcogenide glasses |
title_full |
Raman investigation of structural photoinduced irreversible changes of Ga10Ge25S65 chalcogenide glasses |
title_fullStr |
Raman investigation of structural photoinduced irreversible changes of Ga10Ge25S65 chalcogenide glasses |
title_full_unstemmed |
Raman investigation of structural photoinduced irreversible changes of Ga10Ge25S65 chalcogenide glasses |
title_sort |
Raman investigation of structural photoinduced irreversible changes of Ga10Ge25S65 chalcogenide glasses |
author |
Messaddeq, S. H. |
author_facet |
Messaddeq, S. H. Li, M. Sui Lezal, D. Messaddeq, Y. [UNESP] Ribeiro, S. J.L. [UNESP] Oliveira, L. F.C. Rollo, J. M.D.A. |
author_role |
author |
author2 |
Li, M. Sui Lezal, D. Messaddeq, Y. [UNESP] Ribeiro, S. J.L. [UNESP] Oliveira, L. F.C. Rollo, J. M.D.A. |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Lab. of Inorg. Mat. IIC ASCR and ICT Universidade Estadual Paulista (UNESP) Universidade Federal de Juiz de Fora |
dc.contributor.author.fl_str_mv |
Messaddeq, S. H. Li, M. Sui Lezal, D. Messaddeq, Y. [UNESP] Ribeiro, S. J.L. [UNESP] Oliveira, L. F.C. Rollo, J. M.D.A. |
dc.subject.por.fl_str_mv |
Chalcogenide GaGeS bulk glass Photoexpansion Raman spectra |
topic |
Chalcogenide GaGeS bulk glass Photoexpansion Raman spectra |
description |
The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga10Ge25S65 glasses has been studied through their effects on the structure and optical properties. To evaluate the photostructural change infrared and Raman spectra for bulk Ga10Ge25S65 glasses have been measured before and after exposure. The Raman spectra are interpreted in terms of models in which the Ge atoms are fourfold coordinated and the S atoms are two fold coordinated. The observed changes in the spectral region of (S-S) stretching vibration (470-490 cm-1) is a direct evidence for the occurrence of important structural changes in local bonding configuration caused by optical irradiation. It is shown that the dominant photostrucural changes are chain formation tendency of the chalcogenide atoms under the laser irradiation rather than rings. |
publishDate |
2001 |
dc.date.none.fl_str_mv |
2001-01-01 2022-04-29T08:46:49Z 2022-04-29T08:46:49Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
Journal of Optoelectronics and Advanced Materials, v. 3, n. 2, p. 295-302, 2001. 1454-4164 http://hdl.handle.net/11449/231657 2-s2.0-0001685467 |
identifier_str_mv |
Journal of Optoelectronics and Advanced Materials, v. 3, n. 2, p. 295-302, 2001. 1454-4164 2-s2.0-0001685467 |
url |
http://hdl.handle.net/11449/231657 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Optoelectronics and Advanced Materials |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
295-302 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1799964626434129920 |