Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van der Waals layered Sn3 O4 semiconductor AB INITIO INVESTIGATION of the ROLE ... FREIRE, ORLANDI, and da SILVA

Detalhes bibliográficos
Autor(a) principal: Freire, Rafael L. H.
Data de Publicação: 2020
Outros Autores: Orlandi, Marcelo O. [UNESP], Da Silva, Juarez L. F.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1103/PhysRevMaterials.4.104002
http://hdl.handle.net/11449/205382
Resumo: We report an atomistic investigation, based on density functional theory calculations within the D3 van der Waals correction, of the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the semiconductor Sn3O4(010) monolayer surface. Except for NO2 and NO molecules, the adsorption energies are from -64meV (H2) up to -167meV (CO2) with the molecule-surface distances larger than 3.30Å for all molecules, and hence, minor effects were observed on the Sn3O4(010) surface electronic structure upon adsorption. NO2 has the largest adsorption energy (-525meV), which can be explained by closer approach of the two O atoms towards the surface, while NO binds to the surface with about half of the NO2 adsorption energy (e.g., -279meV). From Bader analysis, we found substantial charge transfer from the surface to the molecules, -0.52e (NO2) and -0.23e (NO), which is consistent with the smaller distances to the surface, 2.46 and 2.82Å, respectively. Thus, those results suggest an improved detection performance of Sn3O4 towards NO2, which can help to design sensor devices based on the Sn3O4(010) monolayers.
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spelling Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van der Waals layered Sn3 O4 semiconductor AB INITIO INVESTIGATION of the ROLE ... FREIRE, ORLANDI, and da SILVAWe report an atomistic investigation, based on density functional theory calculations within the D3 van der Waals correction, of the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the semiconductor Sn3O4(010) monolayer surface. Except for NO2 and NO molecules, the adsorption energies are from -64meV (H2) up to -167meV (CO2) with the molecule-surface distances larger than 3.30Å for all molecules, and hence, minor effects were observed on the Sn3O4(010) surface electronic structure upon adsorption. NO2 has the largest adsorption energy (-525meV), which can be explained by closer approach of the two O atoms towards the surface, while NO binds to the surface with about half of the NO2 adsorption energy (e.g., -279meV). From Bader analysis, we found substantial charge transfer from the surface to the molecules, -0.52e (NO2) and -0.23e (NO), which is consistent with the smaller distances to the surface, 2.46 and 2.82Å, respectively. Thus, those results suggest an improved detection performance of Sn3O4 towards NO2, which can help to design sensor devices based on the Sn3O4(010) monolayers.Beijing Computational Science Research CenterDepartment of Engineering Physics and Mathematics São Paulo State University (UNESP)São Carlos Institute of Chemistry University of São Paulo, P.O. Box 780Department of Engineering Physics and Mathematics São Paulo State University (UNESP)Beijing Computational Science Research CenterUniversidade Estadual Paulista (Unesp)Universidade de São Paulo (USP)Freire, Rafael L. H.Orlandi, Marcelo O. [UNESP]Da Silva, Juarez L. F.2021-06-25T10:14:22Z2021-06-25T10:14:22Z2020-10-02info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1103/PhysRevMaterials.4.104002Physical Review Materials, v. 4, n. 10, 2020.2475-9953http://hdl.handle.net/11449/20538210.1103/PhysRevMaterials.4.1040022-s2.0-85094124514Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengPhysical Review Materialsinfo:eu-repo/semantics/openAccess2021-10-23T12:39:59Zoai:repositorio.unesp.br:11449/205382Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T12:39:59Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van der Waals layered Sn3 O4 semiconductor AB INITIO INVESTIGATION of the ROLE ... FREIRE, ORLANDI, and da SILVA
title Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van der Waals layered Sn3 O4 semiconductor AB INITIO INVESTIGATION of the ROLE ... FREIRE, ORLANDI, and da SILVA
spellingShingle Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van der Waals layered Sn3 O4 semiconductor AB INITIO INVESTIGATION of the ROLE ... FREIRE, ORLANDI, and da SILVA
Freire, Rafael L. H.
title_short Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van der Waals layered Sn3 O4 semiconductor AB INITIO INVESTIGATION of the ROLE ... FREIRE, ORLANDI, and da SILVA
title_full Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van der Waals layered Sn3 O4 semiconductor AB INITIO INVESTIGATION of the ROLE ... FREIRE, ORLANDI, and da SILVA
title_fullStr Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van der Waals layered Sn3 O4 semiconductor AB INITIO INVESTIGATION of the ROLE ... FREIRE, ORLANDI, and da SILVA
title_full_unstemmed Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van der Waals layered Sn3 O4 semiconductor AB INITIO INVESTIGATION of the ROLE ... FREIRE, ORLANDI, and da SILVA
title_sort Ab initio investigation of the role of charge transfer in the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the van der Waals layered Sn3 O4 semiconductor AB INITIO INVESTIGATION of the ROLE ... FREIRE, ORLANDI, and da SILVA
author Freire, Rafael L. H.
author_facet Freire, Rafael L. H.
Orlandi, Marcelo O. [UNESP]
Da Silva, Juarez L. F.
author_role author
author2 Orlandi, Marcelo O. [UNESP]
Da Silva, Juarez L. F.
author2_role author
author
dc.contributor.none.fl_str_mv Beijing Computational Science Research Center
Universidade Estadual Paulista (Unesp)
Universidade de São Paulo (USP)
dc.contributor.author.fl_str_mv Freire, Rafael L. H.
Orlandi, Marcelo O. [UNESP]
Da Silva, Juarez L. F.
description We report an atomistic investigation, based on density functional theory calculations within the D3 van der Waals correction, of the adsorption properties of H2, N2, O2, CO, NO, CO2, NO2, and CH4 on the semiconductor Sn3O4(010) monolayer surface. Except for NO2 and NO molecules, the adsorption energies are from -64meV (H2) up to -167meV (CO2) with the molecule-surface distances larger than 3.30Å for all molecules, and hence, minor effects were observed on the Sn3O4(010) surface electronic structure upon adsorption. NO2 has the largest adsorption energy (-525meV), which can be explained by closer approach of the two O atoms towards the surface, while NO binds to the surface with about half of the NO2 adsorption energy (e.g., -279meV). From Bader analysis, we found substantial charge transfer from the surface to the molecules, -0.52e (NO2) and -0.23e (NO), which is consistent with the smaller distances to the surface, 2.46 and 2.82Å, respectively. Thus, those results suggest an improved detection performance of Sn3O4 towards NO2, which can help to design sensor devices based on the Sn3O4(010) monolayers.
publishDate 2020
dc.date.none.fl_str_mv 2020-10-02
2021-06-25T10:14:22Z
2021-06-25T10:14:22Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1103/PhysRevMaterials.4.104002
Physical Review Materials, v. 4, n. 10, 2020.
2475-9953
http://hdl.handle.net/11449/205382
10.1103/PhysRevMaterials.4.104002
2-s2.0-85094124514
url http://dx.doi.org/10.1103/PhysRevMaterials.4.104002
http://hdl.handle.net/11449/205382
identifier_str_mv Physical Review Materials, v. 4, n. 10, 2020.
2475-9953
10.1103/PhysRevMaterials.4.104002
2-s2.0-85094124514
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Physical Review Materials
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
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