Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1007/s10854-015-4103-z http://hdl.handle.net/11449/177801 |
Resumo: | Bi3NbO7 (BNO) thin films were deposited on Pt/TiO2/SiO2/Si (100) and LaNiO3 bottom electrode substrates at room temperature from the polymeric precursor method. X-ray powder diffraction was used to investigate the formation characteristics and stability range of the tetragonal modification of a fluorite-type solid solution. The results showed that this tetragonal, commensurately modulated phase forms through the intermediate formation of the incommensurately modulated cubic fluorite phase followed by the incommensurate-commensurate transformation. LaNiO3 (LNO) bottom electrode strongly promotes the formation of high intensity (111) texture of BNO films. The dielectric constants of the films increased from 192 to 357 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10−7 to 10−8 A/cm2 at a voltage of 5 V. The reduction of dc leakage current is explained on the basis of relative phase stability and improved microstructure of the material. The capacitance density of 75 fC/µm2, dielectric loss of 0.04 % at 1 MHz, and breakdown strength of about 0.30 MV/cm is compatible with embedded decoupling capacitors applications. |
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Dielectric properties of bismuth niobate films using LaNiO3 bottom electrodeBi3NbO7 (BNO) thin films were deposited on Pt/TiO2/SiO2/Si (100) and LaNiO3 bottom electrode substrates at room temperature from the polymeric precursor method. X-ray powder diffraction was used to investigate the formation characteristics and stability range of the tetragonal modification of a fluorite-type solid solution. The results showed that this tetragonal, commensurately modulated phase forms through the intermediate formation of the incommensurately modulated cubic fluorite phase followed by the incommensurate-commensurate transformation. LaNiO3 (LNO) bottom electrode strongly promotes the formation of high intensity (111) texture of BNO films. The dielectric constants of the films increased from 192 to 357 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10−7 to 10−8 A/cm2 at a voltage of 5 V. The reduction of dc leakage current is explained on the basis of relative phase stability and improved microstructure of the material. The capacitance density of 75 fC/µm2, dielectric loss of 0.04 % at 1 MHz, and breakdown strength of about 0.30 MV/cm is compatible with embedded decoupling capacitors applications.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Univ. Estadual Paulista- Unesp, Av. Dr Ariberto Pereira da Cunha 333, Portal das Colinas, P.O. Box 355Univ. Estadual Paulista- Unesp, Av. Dr Ariberto Pereira da Cunha 333, Portal das Colinas, P.O. Box 355FAPESP: 2013/07296-2CNPq: 573636/2008-7Universidade Estadual Paulista (Unesp)Goncalves, L. F. [UNESP]Rocha, L. S.R. [UNESP]Silva, C. C. [UNESP]Cortés, J. A. [UNESP]Ramirez, M. A. [UNESP]Simões, A. Z. [UNESP]2018-12-11T17:27:10Z2018-12-11T17:27:10Z2016-03-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article2866-2874application/pdfhttp://dx.doi.org/10.1007/s10854-015-4103-zJournal of Materials Science: Materials in Electronics, v. 27, n. 3, p. 2866-2874, 2016.1573-482X0957-4522http://hdl.handle.net/11449/17780110.1007/s10854-015-4103-z2-s2.0-849579389372-s2.0-84957938937.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Materials Science: Materials in Electronics0,503info:eu-repo/semantics/openAccess2024-07-02T15:04:15Zoai:repositorio.unesp.br:11449/177801Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T23:24:03.873716Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode |
title |
Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode |
spellingShingle |
Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode Goncalves, L. F. [UNESP] |
title_short |
Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode |
title_full |
Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode |
title_fullStr |
Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode |
title_full_unstemmed |
Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode |
title_sort |
Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode |
author |
Goncalves, L. F. [UNESP] |
author_facet |
Goncalves, L. F. [UNESP] Rocha, L. S.R. [UNESP] Silva, C. C. [UNESP] Cortés, J. A. [UNESP] Ramirez, M. A. [UNESP] Simões, A. Z. [UNESP] |
author_role |
author |
author2 |
Rocha, L. S.R. [UNESP] Silva, C. C. [UNESP] Cortés, J. A. [UNESP] Ramirez, M. A. [UNESP] Simões, A. Z. [UNESP] |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Goncalves, L. F. [UNESP] Rocha, L. S.R. [UNESP] Silva, C. C. [UNESP] Cortés, J. A. [UNESP] Ramirez, M. A. [UNESP] Simões, A. Z. [UNESP] |
description |
Bi3NbO7 (BNO) thin films were deposited on Pt/TiO2/SiO2/Si (100) and LaNiO3 bottom electrode substrates at room temperature from the polymeric precursor method. X-ray powder diffraction was used to investigate the formation characteristics and stability range of the tetragonal modification of a fluorite-type solid solution. The results showed that this tetragonal, commensurately modulated phase forms through the intermediate formation of the incommensurately modulated cubic fluorite phase followed by the incommensurate-commensurate transformation. LaNiO3 (LNO) bottom electrode strongly promotes the formation of high intensity (111) texture of BNO films. The dielectric constants of the films increased from 192 to 357 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10−7 to 10−8 A/cm2 at a voltage of 5 V. The reduction of dc leakage current is explained on the basis of relative phase stability and improved microstructure of the material. The capacitance density of 75 fC/µm2, dielectric loss of 0.04 % at 1 MHz, and breakdown strength of about 0.30 MV/cm is compatible with embedded decoupling capacitors applications. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-03-01 2018-12-11T17:27:10Z 2018-12-11T17:27:10Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1007/s10854-015-4103-z Journal of Materials Science: Materials in Electronics, v. 27, n. 3, p. 2866-2874, 2016. 1573-482X 0957-4522 http://hdl.handle.net/11449/177801 10.1007/s10854-015-4103-z 2-s2.0-84957938937 2-s2.0-84957938937.pdf |
url |
http://dx.doi.org/10.1007/s10854-015-4103-z http://hdl.handle.net/11449/177801 |
identifier_str_mv |
Journal of Materials Science: Materials in Electronics, v. 27, n. 3, p. 2866-2874, 2016. 1573-482X 0957-4522 10.1007/s10854-015-4103-z 2-s2.0-84957938937 2-s2.0-84957938937.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Materials Science: Materials in Electronics 0,503 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
2866-2874 application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129517273743360 |