A Monolithic 0.35-mu m SiGe Class E Power Amplifier Designed at 1.9 GHz

Detalhes bibliográficos
Autor(a) principal: Santos, Antonio Jose S. dos
Data de Publicação: 2013
Outros Autores: Martins, Everson [UNESP], IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/196085
Resumo: This paper presents the design of a monolithic 1.9 GHz, Class E, power amplifier (PA) for wireless application with the main components on chip. A cascode topology is used to attenuate transistor stress and to increase the output power, although it compromises the efficiency due to the dissipative process caused by transistor parasitic capacitances. The proposed PA was developed in a single-ended topology because most of the existing components designed use this configuration. The PA was developed in a 0.35-mu m SiGe BiCMOS technology with 3.3 Volts which delivers 20.9 dBm output power and 25.5% of power added efficiency (PAE). It also presents a bandwidth of 60 MHz which is suitable for GSM application. Some considerations about the layout are also discussed.
id UNSP_5dadabcd8e1a611830d46f8d8905707b
oai_identifier_str oai:repositorio.unesp.br:11449/196085
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling A Monolithic 0.35-mu m SiGe Class E Power Amplifier Designed at 1.9 GHzPower amplifier (PA)low powerClass Eswitching modewirelesstransistor stressoutput powerpower added efficiency (PAE)This paper presents the design of a monolithic 1.9 GHz, Class E, power amplifier (PA) for wireless application with the main components on chip. A cascode topology is used to attenuate transistor stress and to increase the output power, although it compromises the efficiency due to the dissipative process caused by transistor parasitic capacitances. The proposed PA was developed in a single-ended topology because most of the existing components designed use this configuration. The PA was developed in a 0.35-mu m SiGe BiCMOS technology with 3.3 Volts which delivers 20.9 dBm output power and 25.5% of power added efficiency (PAE). It also presents a bandwidth of 60 MHz which is suitable for GSM application. Some considerations about the layout are also discussed.Univ Estadual Campinas, CCS, Campinas, SP, BrazilUNESP Sao Paulo State Univ, Control Engn & Automat, Sorocaba, BrazilUNESP Sao Paulo State Univ, Control Engn & Automat, Sorocaba, BrazilIeeeUniversidade Estadual de Campinas (UNICAMP)Universidade Estadual Paulista (Unesp)Santos, Antonio Jose S. dosMartins, Everson [UNESP]IEEE2020-12-10T19:32:54Z2020-12-10T19:32:54Z2013-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject52013 Sbmo/ieee Mtt-s International Microwave & Optoelectronics Conference (imoc). New York: Ieee, 5 p., 2013.http://hdl.handle.net/11449/196085WOS:0003593762000847780445976263017Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2013 Sbmo/ieee Mtt-s International Microwave & Optoelectronics Conference (imoc)info:eu-repo/semantics/openAccess2021-10-22T21:54:28Zoai:repositorio.unesp.br:11449/196085Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-22T21:54:28Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv A Monolithic 0.35-mu m SiGe Class E Power Amplifier Designed at 1.9 GHz
title A Monolithic 0.35-mu m SiGe Class E Power Amplifier Designed at 1.9 GHz
spellingShingle A Monolithic 0.35-mu m SiGe Class E Power Amplifier Designed at 1.9 GHz
Santos, Antonio Jose S. dos
Power amplifier (PA)
low power
Class E
switching mode
wireless
transistor stress
output power
power added efficiency (PAE)
title_short A Monolithic 0.35-mu m SiGe Class E Power Amplifier Designed at 1.9 GHz
title_full A Monolithic 0.35-mu m SiGe Class E Power Amplifier Designed at 1.9 GHz
title_fullStr A Monolithic 0.35-mu m SiGe Class E Power Amplifier Designed at 1.9 GHz
title_full_unstemmed A Monolithic 0.35-mu m SiGe Class E Power Amplifier Designed at 1.9 GHz
title_sort A Monolithic 0.35-mu m SiGe Class E Power Amplifier Designed at 1.9 GHz
author Santos, Antonio Jose S. dos
author_facet Santos, Antonio Jose S. dos
Martins, Everson [UNESP]
IEEE
author_role author
author2 Martins, Everson [UNESP]
IEEE
author2_role author
author
dc.contributor.none.fl_str_mv Universidade Estadual de Campinas (UNICAMP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Santos, Antonio Jose S. dos
Martins, Everson [UNESP]
IEEE
dc.subject.por.fl_str_mv Power amplifier (PA)
low power
Class E
switching mode
wireless
transistor stress
output power
power added efficiency (PAE)
topic Power amplifier (PA)
low power
Class E
switching mode
wireless
transistor stress
output power
power added efficiency (PAE)
description This paper presents the design of a monolithic 1.9 GHz, Class E, power amplifier (PA) for wireless application with the main components on chip. A cascode topology is used to attenuate transistor stress and to increase the output power, although it compromises the efficiency due to the dissipative process caused by transistor parasitic capacitances. The proposed PA was developed in a single-ended topology because most of the existing components designed use this configuration. The PA was developed in a 0.35-mu m SiGe BiCMOS technology with 3.3 Volts which delivers 20.9 dBm output power and 25.5% of power added efficiency (PAE). It also presents a bandwidth of 60 MHz which is suitable for GSM application. Some considerations about the layout are also discussed.
publishDate 2013
dc.date.none.fl_str_mv 2013-01-01
2020-12-10T19:32:54Z
2020-12-10T19:32:54Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2013 Sbmo/ieee Mtt-s International Microwave & Optoelectronics Conference (imoc). New York: Ieee, 5 p., 2013.
http://hdl.handle.net/11449/196085
WOS:000359376200084
7780445976263017
identifier_str_mv 2013 Sbmo/ieee Mtt-s International Microwave & Optoelectronics Conference (imoc). New York: Ieee, 5 p., 2013.
WOS:000359376200084
7780445976263017
url http://hdl.handle.net/11449/196085
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2013 Sbmo/ieee Mtt-s International Microwave & Optoelectronics Conference (imoc)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 5
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1799964675271557120

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