Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells
Autor(a) principal: | |
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Data de Publicação: | 2008 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.4028/www.scientific.net/MSF.591-593.13 http://hdl.handle.net/11449/41579 |
Resumo: | ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga(3+), as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga. |
id |
UNSP_640f1fa3aec3621af4811622fa68d080 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/41579 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar CellsDSSCnanostructured filmsZnO:GaGZOZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga(3+), as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga.UNESP, Inst Quim, BR-14800900 Araraquara, SP, BrazilUNESP, Inst Quim, BR-14800900 Araraquara, SP, BrazilTrans Tech Publications LtdUniversidade Estadual Paulista (Unesp)Goncalves, Agnaldo S. [UNESP]Nogueira, Ana F.Davolos, Marian Rosaly [UNESP]Masaki, NaruhikoYanagida, ShozoAntonio, Selma G. [UNESP]Paiva-Santos, Carlos O. [UNESP]2014-05-20T15:32:45Z2014-05-20T15:32:45Z2008-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject13-17http://dx.doi.org/10.4028/www.scientific.net/MSF.591-593.13Advanced Powder Technology Vi. Stafa-zurich: Trans Tech Publications Ltd, v. 591-593, p. 13-17, 2008.0255-5476http://hdl.handle.net/11449/4157910.4028/www.scientific.net/MSF.591-593.13WOS:0002624811000034284809342546287Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengAdvanced Powder Technology Vi0,180info:eu-repo/semantics/openAccess2021-10-23T21:44:17Zoai:repositorio.unesp.br:11449/41579Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:59:19.243760Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells |
title |
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells |
spellingShingle |
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells Goncalves, Agnaldo S. [UNESP] DSSC nanostructured films ZnO:Ga GZO |
title_short |
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells |
title_full |
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells |
title_fullStr |
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells |
title_full_unstemmed |
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells |
title_sort |
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells |
author |
Goncalves, Agnaldo S. [UNESP] |
author_facet |
Goncalves, Agnaldo S. [UNESP] Nogueira, Ana F. Davolos, Marian Rosaly [UNESP] Masaki, Naruhiko Yanagida, Shozo Antonio, Selma G. [UNESP] Paiva-Santos, Carlos O. [UNESP] |
author_role |
author |
author2 |
Nogueira, Ana F. Davolos, Marian Rosaly [UNESP] Masaki, Naruhiko Yanagida, Shozo Antonio, Selma G. [UNESP] Paiva-Santos, Carlos O. [UNESP] |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Goncalves, Agnaldo S. [UNESP] Nogueira, Ana F. Davolos, Marian Rosaly [UNESP] Masaki, Naruhiko Yanagida, Shozo Antonio, Selma G. [UNESP] Paiva-Santos, Carlos O. [UNESP] |
dc.subject.por.fl_str_mv |
DSSC nanostructured films ZnO:Ga GZO |
topic |
DSSC nanostructured films ZnO:Ga GZO |
description |
ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga(3+), as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga. |
publishDate |
2008 |
dc.date.none.fl_str_mv |
2008-01-01 2014-05-20T15:32:45Z 2014-05-20T15:32:45Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.4028/www.scientific.net/MSF.591-593.13 Advanced Powder Technology Vi. Stafa-zurich: Trans Tech Publications Ltd, v. 591-593, p. 13-17, 2008. 0255-5476 http://hdl.handle.net/11449/41579 10.4028/www.scientific.net/MSF.591-593.13 WOS:000262481100003 4284809342546287 |
url |
http://dx.doi.org/10.4028/www.scientific.net/MSF.591-593.13 http://hdl.handle.net/11449/41579 |
identifier_str_mv |
Advanced Powder Technology Vi. Stafa-zurich: Trans Tech Publications Ltd, v. 591-593, p. 13-17, 2008. 0255-5476 10.4028/www.scientific.net/MSF.591-593.13 WOS:000262481100003 4284809342546287 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Advanced Powder Technology Vi 0,180 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
13-17 |
dc.publisher.none.fl_str_mv |
Trans Tech Publications Ltd |
publisher.none.fl_str_mv |
Trans Tech Publications Ltd |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129146688110592 |