Influence of Proton Radiation and Strain on nFinFET Zero Temperature Coefficient
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://hdl.handle.net/11449/159312 |
Resumo: | This paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves the mobility and consequently the transconductance (gm) and reduces the threshold voltage (V-TH) due to the bandgap reduction. Proton radiation degrades gm and decreases V-TH mainly for wider fins. We observed experimentally that both parameters (gm and V-TH) influence the ZTC bias point, which is also supported by the ZTC analytical model. The V-TH influences directly the V-zTc in amplitude and the radiation the gm temperature degradation factor (c), consequently leading to undesired changes of V-zTc with temperature. |
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Repositório Institucional da UNESP |
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Influence of Proton Radiation and Strain on nFinFET Zero Temperature CoefficientSOT FinFETZero Temperature CoefficientstrainradiationThis paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves the mobility and consequently the transconductance (gm) and reduces the threshold voltage (V-TH) due to the bandgap reduction. Proton radiation degrades gm and decreases V-TH mainly for wider fins. We observed experimentally that both parameters (gm and V-TH) influence the ZTC bias point, which is also supported by the ZTC analytical model. The V-TH influences directly the V-zTc in amplitude and the radiation the gm temperature degradation factor (c), consequently leading to undesired changes of V-zTc with temperature.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Univ Sao Paulo, PSI, LSI, Sao Paulo, BrazilUniv Estadual Paulista, UNESP, Sao Joao Do Boa Vista, BrazilImec, Leuven, BelgiumKatholieke Univ Leuven, EE Dept, Leuven, BelgiumUniv Estadual Paulista, UNESP, Sao Joao Do Boa Vista, BrazilIeeeUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)ImecKatholieke Univ LeuvenNascimento, Vinicius M.Agopian, Paula G. D. [UNESP]Almeida, Luciano M.Bordallo, Caio C. M.Simoen, EddyClaeys, CorMartino, Joao A.IEEE2018-11-26T15:37:56Z2018-11-26T15:37:56Z2016-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject42016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2016.http://hdl.handle.net/11449/159312WOS:00039246900004804969095954656960000-0002-0886-7798Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2016 31st Symposium On Microelectronics Technology And Devices (sbmicro)info:eu-repo/semantics/openAccess2021-10-23T21:47:14Zoai:repositorio.unesp.br:11449/159312Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:29:51.512847Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Influence of Proton Radiation and Strain on nFinFET Zero Temperature Coefficient |
title |
Influence of Proton Radiation and Strain on nFinFET Zero Temperature Coefficient |
spellingShingle |
Influence of Proton Radiation and Strain on nFinFET Zero Temperature Coefficient Nascimento, Vinicius M. SOT FinFET Zero Temperature Coefficient strain radiation |
title_short |
Influence of Proton Radiation and Strain on nFinFET Zero Temperature Coefficient |
title_full |
Influence of Proton Radiation and Strain on nFinFET Zero Temperature Coefficient |
title_fullStr |
Influence of Proton Radiation and Strain on nFinFET Zero Temperature Coefficient |
title_full_unstemmed |
Influence of Proton Radiation and Strain on nFinFET Zero Temperature Coefficient |
title_sort |
Influence of Proton Radiation and Strain on nFinFET Zero Temperature Coefficient |
author |
Nascimento, Vinicius M. |
author_facet |
Nascimento, Vinicius M. Agopian, Paula G. D. [UNESP] Almeida, Luciano M. Bordallo, Caio C. M. Simoen, Eddy Claeys, Cor Martino, Joao A. IEEE |
author_role |
author |
author2 |
Agopian, Paula G. D. [UNESP] Almeida, Luciano M. Bordallo, Caio C. M. Simoen, Eddy Claeys, Cor Martino, Joao A. IEEE |
author2_role |
author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (Unesp) Imec Katholieke Univ Leuven |
dc.contributor.author.fl_str_mv |
Nascimento, Vinicius M. Agopian, Paula G. D. [UNESP] Almeida, Luciano M. Bordallo, Caio C. M. Simoen, Eddy Claeys, Cor Martino, Joao A. IEEE |
dc.subject.por.fl_str_mv |
SOT FinFET Zero Temperature Coefficient strain radiation |
topic |
SOT FinFET Zero Temperature Coefficient strain radiation |
description |
This paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves the mobility and consequently the transconductance (gm) and reduces the threshold voltage (V-TH) due to the bandgap reduction. Proton radiation degrades gm and decreases V-TH mainly for wider fins. We observed experimentally that both parameters (gm and V-TH) influence the ZTC bias point, which is also supported by the ZTC analytical model. The V-TH influences directly the V-zTc in amplitude and the radiation the gm temperature degradation factor (c), consequently leading to undesired changes of V-zTc with temperature. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-01-01 2018-11-26T15:37:56Z 2018-11-26T15:37:56Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2016. http://hdl.handle.net/11449/159312 WOS:000392469000048 0496909595465696 0000-0002-0886-7798 |
identifier_str_mv |
2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2016. WOS:000392469000048 0496909595465696 0000-0002-0886-7798 |
url |
http://hdl.handle.net/11449/159312 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2016 31st Symposium On Microelectronics Technology And Devices (sbmicro) |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
4 |
dc.publisher.none.fl_str_mv |
Ieee |
publisher.none.fl_str_mv |
Ieee |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128368743284736 |