Physical properties and reentrant behavior in PLZT thin films

Detalhes bibliográficos
Autor(a) principal: Melo, M. [UNESP]
Data de Publicação: 2017
Outros Autores: Araujo, E. B. [UNESP], Neradovskaya, E. A., Turygin, A. P., Esin, A. A., Shur, V. Ya, Kholkin, A. L.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1080/00150193.2017.1289792
http://hdl.handle.net/11449/162787
Resumo: La-modified lead zirconate titanate (PLZT) thin films were prepared to study their physical properties at macro- and nanoscale. Piezoresponse force microscopy (PFM) studies suggest a local imprint behavior at room temperature. Confirmed by P-E hysteresis loops recorded at 180-300K, the imprint effect at room temperature tends to disappear at lower temperatures. In addition, the remanent polarization gradually increases and then decreases after reaching a maximum at around 243K. This behavior suggests the occurrence of a reentrant dipole glass or an activated electric field effect in the studied PLZT films.
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spelling Physical properties and reentrant behavior in PLZT thin filmsPLZTthin filmsrelaxorsdipole glassLa-modified lead zirconate titanate (PLZT) thin films were prepared to study their physical properties at macro- and nanoscale. Piezoresponse force microscopy (PFM) studies suggest a local imprint behavior at room temperature. Confirmed by P-E hysteresis loops recorded at 180-300K, the imprint effect at room temperature tends to disappear at lower temperatures. In addition, the remanent polarization gradually increases and then decreases after reaching a maximum at around 243K. This behavior suggests the occurrence of a reentrant dipole glass or an activated electric field effect in the studied PLZT films.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Russian Foundation for Basic ResearchGovernment of the Russian FederationFCT/MECFEDERSao Paulo State Univ, Dept Chem & Phys, Ilha Solteira, SP, BrazilUral Fed Univ, Sch Nat Sci & Math, Ekaterinburg, RussiaUniv Aveiro, Dept Phys, Aveiro, PortugalUniv Aveiro, CICECO Aveiro Inst Mat, Aveiro, PortugalSao Paulo State Univ, Dept Chem & Phys, Ilha Solteira, SP, BrazilCNPq: 304604/2015-1CNPq: 400677/2014-8CNPq: 232241/2014-7Russian Foundation for Basic Research: 16-02-00821-aGovernment of the Russian Federation: 02.A03.21.0006FCT/MEC: FCT UID/CTM/50011/2013Taylor & Francis LtdUniversidade Estadual Paulista (Unesp)Ural Fed UnivUniv AveiroMelo, M. [UNESP]Araujo, E. B. [UNESP]Neradovskaya, E. A.Turygin, A. P.Esin, A. A.Shur, V. YaKholkin, A. L.2018-11-26T17:31:23Z2018-11-26T17:31:23Z2017-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article1-9application/pdfhttp://dx.doi.org/10.1080/00150193.2017.1289792Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 509, n. 1, p. 1-9, 2017.0015-0193http://hdl.handle.net/11449/16278710.1080/00150193.2017.1289792WOS:000401196300001WOS000401196300001.pdfWeb of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengFerroelectrics0,260info:eu-repo/semantics/openAccess2023-10-01T06:02:30Zoai:repositorio.unesp.br:11449/162787Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-10-01T06:02:30Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Physical properties and reentrant behavior in PLZT thin films
title Physical properties and reentrant behavior in PLZT thin films
spellingShingle Physical properties and reentrant behavior in PLZT thin films
Melo, M. [UNESP]
PLZT
thin films
relaxors
dipole glass
title_short Physical properties and reentrant behavior in PLZT thin films
title_full Physical properties and reentrant behavior in PLZT thin films
title_fullStr Physical properties and reentrant behavior in PLZT thin films
title_full_unstemmed Physical properties and reentrant behavior in PLZT thin films
title_sort Physical properties and reentrant behavior in PLZT thin films
author Melo, M. [UNESP]
author_facet Melo, M. [UNESP]
Araujo, E. B. [UNESP]
Neradovskaya, E. A.
Turygin, A. P.
Esin, A. A.
Shur, V. Ya
Kholkin, A. L.
author_role author
author2 Araujo, E. B. [UNESP]
Neradovskaya, E. A.
Turygin, A. P.
Esin, A. A.
Shur, V. Ya
Kholkin, A. L.
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Ural Fed Univ
Univ Aveiro
dc.contributor.author.fl_str_mv Melo, M. [UNESP]
Araujo, E. B. [UNESP]
Neradovskaya, E. A.
Turygin, A. P.
Esin, A. A.
Shur, V. Ya
Kholkin, A. L.
dc.subject.por.fl_str_mv PLZT
thin films
relaxors
dipole glass
topic PLZT
thin films
relaxors
dipole glass
description La-modified lead zirconate titanate (PLZT) thin films were prepared to study their physical properties at macro- and nanoscale. Piezoresponse force microscopy (PFM) studies suggest a local imprint behavior at room temperature. Confirmed by P-E hysteresis loops recorded at 180-300K, the imprint effect at room temperature tends to disappear at lower temperatures. In addition, the remanent polarization gradually increases and then decreases after reaching a maximum at around 243K. This behavior suggests the occurrence of a reentrant dipole glass or an activated electric field effect in the studied PLZT films.
publishDate 2017
dc.date.none.fl_str_mv 2017-01-01
2018-11-26T17:31:23Z
2018-11-26T17:31:23Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv

dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1080/00150193.2017.1289792
Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 509, n. 1, p. 1-9, 2017.
0015-0193
http://hdl.handle.net/11449/162787
10.1080/00150193.2017.1289792
WOS:000401196300001
WOS000401196300001.pdf
identifier_str_mv
Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 509, n. 1, p. 1-9, 2017.
0015-0193
10.1080/00150193.2017.1289792
WOS:000401196300001
WOS000401196300001.pdf
url http://dx.doi.org/10.1080/00150193.2017.1289792
http://hdl.handle.net/11449/162787
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Ferroelectrics
0,260
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 1-9
application/pdf
dc.publisher.none.fl_str_mv Taylor & Francis Ltd
publisher.none.fl_str_mv Taylor & Francis Ltd
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1799964387355656192

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