A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift

Detalhes bibliográficos
Autor(a) principal: De Lima, J. A. [UNESP]
Data de Publicação: 2001
Outros Autores: Dualibe, C. [UNESP]
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/ISCAS.2001.921934
http://hdl.handle.net/11449/66425
Resumo: A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained.
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spelling A low-voltage programmable-gain CMOS amplifier with very-low temperature-driftAspect ratioBandwidthCMOS integrated circuitsComputer simulationElectric potentialGain controlComplementary metal oxide semiconductor (CMOS) amplifiersLow-voltage low-power circuits (LVLP) circuitsAmplifiers (electronic)A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained.Electrical Engineering Department Universidade Estadual Paulista, GuaratinguetáElectrical Engineering Department Universidade Estadual Paulista, GuaratinguetáUniversidade Estadual Paulista (Unesp)De Lima, J. A. [UNESP]Dualibe, C. [UNESP]2014-05-27T11:20:13Z2014-05-27T11:20:13Z2001-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject627-630http://dx.doi.org/10.1109/ISCAS.2001.921934Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, p. 627-630.0271-4310http://hdl.handle.net/11449/6642510.1109/ISCAS.2001.9219342-s2.0-0034998882Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengProceedings - IEEE International Symposium on Circuits and Systems0,237info:eu-repo/semantics/openAccess2024-07-01T20:12:23Zoai:repositorio.unesp.br:11449/66425Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T13:39:51.356574Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
title A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
spellingShingle A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
De Lima, J. A. [UNESP]
Aspect ratio
Bandwidth
CMOS integrated circuits
Computer simulation
Electric potential
Gain control
Complementary metal oxide semiconductor (CMOS) amplifiers
Low-voltage low-power circuits (LVLP) circuits
Amplifiers (electronic)
title_short A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
title_full A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
title_fullStr A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
title_full_unstemmed A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
title_sort A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
author De Lima, J. A. [UNESP]
author_facet De Lima, J. A. [UNESP]
Dualibe, C. [UNESP]
author_role author
author2 Dualibe, C. [UNESP]
author2_role author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv De Lima, J. A. [UNESP]
Dualibe, C. [UNESP]
dc.subject.por.fl_str_mv Aspect ratio
Bandwidth
CMOS integrated circuits
Computer simulation
Electric potential
Gain control
Complementary metal oxide semiconductor (CMOS) amplifiers
Low-voltage low-power circuits (LVLP) circuits
Amplifiers (electronic)
topic Aspect ratio
Bandwidth
CMOS integrated circuits
Computer simulation
Electric potential
Gain control
Complementary metal oxide semiconductor (CMOS) amplifiers
Low-voltage low-power circuits (LVLP) circuits
Amplifiers (electronic)
description A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained.
publishDate 2001
dc.date.none.fl_str_mv 2001-01-01
2014-05-27T11:20:13Z
2014-05-27T11:20:13Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/ISCAS.2001.921934
Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, p. 627-630.
0271-4310
http://hdl.handle.net/11449/66425
10.1109/ISCAS.2001.921934
2-s2.0-0034998882
url http://dx.doi.org/10.1109/ISCAS.2001.921934
http://hdl.handle.net/11449/66425
identifier_str_mv Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, p. 627-630.
0271-4310
10.1109/ISCAS.2001.921934
2-s2.0-0034998882
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Proceedings - IEEE International Symposium on Circuits and Systems
0,237
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 627-630
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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