A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift
Autor(a) principal: | |
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Data de Publicação: | 2001 |
Outros Autores: | |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/ISCAS.2001.921934 http://hdl.handle.net/11449/66425 |
Resumo: | A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained. |
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Repositório Institucional da UNESP |
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A low-voltage programmable-gain CMOS amplifier with very-low temperature-driftAspect ratioBandwidthCMOS integrated circuitsComputer simulationElectric potentialGain controlComplementary metal oxide semiconductor (CMOS) amplifiersLow-voltage low-power circuits (LVLP) circuitsAmplifiers (electronic)A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained.Electrical Engineering Department Universidade Estadual Paulista, GuaratinguetáElectrical Engineering Department Universidade Estadual Paulista, GuaratinguetáUniversidade Estadual Paulista (Unesp)De Lima, J. A. [UNESP]Dualibe, C. [UNESP]2014-05-27T11:20:13Z2014-05-27T11:20:13Z2001-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject627-630http://dx.doi.org/10.1109/ISCAS.2001.921934Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, p. 627-630.0271-4310http://hdl.handle.net/11449/6642510.1109/ISCAS.2001.9219342-s2.0-0034998882Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengProceedings - IEEE International Symposium on Circuits and Systems0,237info:eu-repo/semantics/openAccess2024-07-01T20:12:23Zoai:repositorio.unesp.br:11449/66425Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T13:39:51.356574Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift |
title |
A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift |
spellingShingle |
A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift De Lima, J. A. [UNESP] Aspect ratio Bandwidth CMOS integrated circuits Computer simulation Electric potential Gain control Complementary metal oxide semiconductor (CMOS) amplifiers Low-voltage low-power circuits (LVLP) circuits Amplifiers (electronic) |
title_short |
A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift |
title_full |
A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift |
title_fullStr |
A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift |
title_full_unstemmed |
A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift |
title_sort |
A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift |
author |
De Lima, J. A. [UNESP] |
author_facet |
De Lima, J. A. [UNESP] Dualibe, C. [UNESP] |
author_role |
author |
author2 |
Dualibe, C. [UNESP] |
author2_role |
author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
De Lima, J. A. [UNESP] Dualibe, C. [UNESP] |
dc.subject.por.fl_str_mv |
Aspect ratio Bandwidth CMOS integrated circuits Computer simulation Electric potential Gain control Complementary metal oxide semiconductor (CMOS) amplifiers Low-voltage low-power circuits (LVLP) circuits Amplifiers (electronic) |
topic |
Aspect ratio Bandwidth CMOS integrated circuits Computer simulation Electric potential Gain control Complementary metal oxide semiconductor (CMOS) amplifiers Low-voltage low-power circuits (LVLP) circuits Amplifiers (electronic) |
description |
A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained. |
publishDate |
2001 |
dc.date.none.fl_str_mv |
2001-01-01 2014-05-27T11:20:13Z 2014-05-27T11:20:13Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/ISCAS.2001.921934 Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, p. 627-630. 0271-4310 http://hdl.handle.net/11449/66425 10.1109/ISCAS.2001.921934 2-s2.0-0034998882 |
url |
http://dx.doi.org/10.1109/ISCAS.2001.921934 http://hdl.handle.net/11449/66425 |
identifier_str_mv |
Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, p. 627-630. 0271-4310 10.1109/ISCAS.2001.921934 2-s2.0-0034998882 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Proceedings - IEEE International Symposium on Circuits and Systems 0,237 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
627-630 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128260962254848 |