Thin films of poly[(9,9-dioctylfluorene)-co-thiophene] deposited on ITO by the Langmuir–Schaefer and Langmuir–Blodgett techniques

Detalhes bibliográficos
Autor(a) principal: Bento, Danielly Cristina
Data de Publicação: 2017
Outros Autores: Barbosa, Camila Gouveia, Roncaselli, Lucas Kaique Martins [UNESP], Renzi, Wesley, Duarte, José Leonil, de Almeida Olivati, Clarissa [UNESP], Péres, Laura Oliveira, de Santana, Henrique
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1007/s10854-016-6000-5
http://hdl.handle.net/11449/169156
Resumo: The copolymer, poly[(9,9-dioctylfluorene)-co-thiophene] (PDOF-co-Th), prepared by the Suzuki reaction, was deposited as thin films on ITO substrates using the Langmuir–Blodgett and Langmuir–Schaefer techniques. The optical properties of the films were studied by UV–Vis reflectance, photoluminescence and time-resolved photoluminescence, and the electrical properties by electrochemical impedance spectroscopy as a function of film thickness. Raman spectroscopy and atomic force microscopy (AFM) were also used with the aim of elucidating the interactions between layers and the morphology of the PDOF-co-Th thin films at the interface with the ITO. The absorption and emission spectra showed shifts and alterations in the intensities of the bands as a function of film thickness, related to the formation of aggregates and increases in the radiation self-absorption effect. The Nyquist and Bode phase diagrams revealed that the charge transfer process at the ITO/PDOF-co-Th/electrolyte interfaces was enhanced as the number of layers increased. Raman spectra of monolayer films revealed a preferential interaction between the fluorine rings and the electrode surface that was not strong enough to alter the optical and electrical properties of the copolymer. However, as shown in the AFM images of the PDOF-co-Th film surfaces, there is an increase in roughness and compaction that proves that the material agglomerates as the number of layers increases, suggesting that the thiophene rings also come closer together on the substrate surface, enhancing the charge transfer process at this interface.
id UNSP_7fb3dba7c163cad99cc6d17706d9e61e
oai_identifier_str oai:repositorio.unesp.br:11449/169156
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Thin films of poly[(9,9-dioctylfluorene)-co-thiophene] deposited on ITO by the Langmuir–Schaefer and Langmuir–Blodgett techniquesThe copolymer, poly[(9,9-dioctylfluorene)-co-thiophene] (PDOF-co-Th), prepared by the Suzuki reaction, was deposited as thin films on ITO substrates using the Langmuir–Blodgett and Langmuir–Schaefer techniques. The optical properties of the films were studied by UV–Vis reflectance, photoluminescence and time-resolved photoluminescence, and the electrical properties by electrochemical impedance spectroscopy as a function of film thickness. Raman spectroscopy and atomic force microscopy (AFM) were also used with the aim of elucidating the interactions between layers and the morphology of the PDOF-co-Th thin films at the interface with the ITO. The absorption and emission spectra showed shifts and alterations in the intensities of the bands as a function of film thickness, related to the formation of aggregates and increases in the radiation self-absorption effect. The Nyquist and Bode phase diagrams revealed that the charge transfer process at the ITO/PDOF-co-Th/electrolyte interfaces was enhanced as the number of layers increased. Raman spectra of monolayer films revealed a preferential interaction between the fluorine rings and the electrode surface that was not strong enough to alter the optical and electrical properties of the copolymer. However, as shown in the AFM images of the PDOF-co-Th film surfaces, there is an increase in roughness and compaction that proves that the material agglomerates as the number of layers increases, suggesting that the thiophene rings also come closer together on the substrate surface, enhancing the charge transfer process at this interface.Departamento de Química CCE Universidade Estadual de LondrinaLaboratório de Materiais Hibridos Universidade Federal de São PauloFaculdade de Ciência e Tecnologia (FCT) UNESPDepartamento de Física Universidade Estadual de LondrinaFaculdade de Ciência e Tecnologia (FCT) UNESPUniversidade Estadual de Londrina (UEL)Universidade Federal de São Paulo (UNIFESP)Universidade Estadual Paulista (Unesp)Bento, Danielly CristinaBarbosa, Camila GouveiaRoncaselli, Lucas Kaique Martins [UNESP]Renzi, WesleyDuarte, José Leonilde Almeida Olivati, Clarissa [UNESP]Péres, Laura Oliveirade Santana, Henrique2018-12-11T16:44:42Z2018-12-11T16:44:42Z2017-02-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article3875-3883application/pdfhttp://dx.doi.org/10.1007/s10854-016-6000-5Journal of Materials Science: Materials in Electronics, v. 28, n. 4, p. 3875-3883, 2017.1573-482X0957-4522http://hdl.handle.net/11449/16915610.1007/s10854-016-6000-52-s2.0-849964864972-s2.0-84996486497.pdf98222128086514150000-0002-0114-6795Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Materials Science: Materials in Electronics0,503info:eu-repo/semantics/openAccess2023-10-19T06:08:14Zoai:repositorio.unesp.br:11449/169156Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T15:22:06.037557Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Thin films of poly[(9,9-dioctylfluorene)-co-thiophene] deposited on ITO by the Langmuir–Schaefer and Langmuir–Blodgett techniques
title Thin films of poly[(9,9-dioctylfluorene)-co-thiophene] deposited on ITO by the Langmuir–Schaefer and Langmuir–Blodgett techniques
spellingShingle Thin films of poly[(9,9-dioctylfluorene)-co-thiophene] deposited on ITO by the Langmuir–Schaefer and Langmuir–Blodgett techniques
Bento, Danielly Cristina
title_short Thin films of poly[(9,9-dioctylfluorene)-co-thiophene] deposited on ITO by the Langmuir–Schaefer and Langmuir–Blodgett techniques
title_full Thin films of poly[(9,9-dioctylfluorene)-co-thiophene] deposited on ITO by the Langmuir–Schaefer and Langmuir–Blodgett techniques
title_fullStr Thin films of poly[(9,9-dioctylfluorene)-co-thiophene] deposited on ITO by the Langmuir–Schaefer and Langmuir–Blodgett techniques
title_full_unstemmed Thin films of poly[(9,9-dioctylfluorene)-co-thiophene] deposited on ITO by the Langmuir–Schaefer and Langmuir–Blodgett techniques
title_sort Thin films of poly[(9,9-dioctylfluorene)-co-thiophene] deposited on ITO by the Langmuir–Schaefer and Langmuir–Blodgett techniques
author Bento, Danielly Cristina
author_facet Bento, Danielly Cristina
Barbosa, Camila Gouveia
Roncaselli, Lucas Kaique Martins [UNESP]
Renzi, Wesley
Duarte, José Leonil
de Almeida Olivati, Clarissa [UNESP]
Péres, Laura Oliveira
de Santana, Henrique
author_role author
author2 Barbosa, Camila Gouveia
Roncaselli, Lucas Kaique Martins [UNESP]
Renzi, Wesley
Duarte, José Leonil
de Almeida Olivati, Clarissa [UNESP]
Péres, Laura Oliveira
de Santana, Henrique
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual de Londrina (UEL)
Universidade Federal de São Paulo (UNIFESP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Bento, Danielly Cristina
Barbosa, Camila Gouveia
Roncaselli, Lucas Kaique Martins [UNESP]
Renzi, Wesley
Duarte, José Leonil
de Almeida Olivati, Clarissa [UNESP]
Péres, Laura Oliveira
de Santana, Henrique
description The copolymer, poly[(9,9-dioctylfluorene)-co-thiophene] (PDOF-co-Th), prepared by the Suzuki reaction, was deposited as thin films on ITO substrates using the Langmuir–Blodgett and Langmuir–Schaefer techniques. The optical properties of the films were studied by UV–Vis reflectance, photoluminescence and time-resolved photoluminescence, and the electrical properties by electrochemical impedance spectroscopy as a function of film thickness. Raman spectroscopy and atomic force microscopy (AFM) were also used with the aim of elucidating the interactions between layers and the morphology of the PDOF-co-Th thin films at the interface with the ITO. The absorption and emission spectra showed shifts and alterations in the intensities of the bands as a function of film thickness, related to the formation of aggregates and increases in the radiation self-absorption effect. The Nyquist and Bode phase diagrams revealed that the charge transfer process at the ITO/PDOF-co-Th/electrolyte interfaces was enhanced as the number of layers increased. Raman spectra of monolayer films revealed a preferential interaction between the fluorine rings and the electrode surface that was not strong enough to alter the optical and electrical properties of the copolymer. However, as shown in the AFM images of the PDOF-co-Th film surfaces, there is an increase in roughness and compaction that proves that the material agglomerates as the number of layers increases, suggesting that the thiophene rings also come closer together on the substrate surface, enhancing the charge transfer process at this interface.
publishDate 2017
dc.date.none.fl_str_mv 2017-02-01
2018-12-11T16:44:42Z
2018-12-11T16:44:42Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1007/s10854-016-6000-5
Journal of Materials Science: Materials in Electronics, v. 28, n. 4, p. 3875-3883, 2017.
1573-482X
0957-4522
http://hdl.handle.net/11449/169156
10.1007/s10854-016-6000-5
2-s2.0-84996486497
2-s2.0-84996486497.pdf
9822212808651415
0000-0002-0114-6795
url http://dx.doi.org/10.1007/s10854-016-6000-5
http://hdl.handle.net/11449/169156
identifier_str_mv Journal of Materials Science: Materials in Electronics, v. 28, n. 4, p. 3875-3883, 2017.
1573-482X
0957-4522
10.1007/s10854-016-6000-5
2-s2.0-84996486497
2-s2.0-84996486497.pdf
9822212808651415
0000-0002-0114-6795
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal of Materials Science: Materials in Electronics
0,503
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3875-3883
application/pdf
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128502867689472