Random Telegraph Signal Noise in Advanced High Performance and Memory Devices

Detalhes bibliográficos
Autor(a) principal: Claeys, C.
Data de Publicação: 2016
Outros Autores: Andrade, M. G. C. de [UNESP], Chai, Z., Fang, W., Govoreanu, B., Kaczer, B., Zhang, W., Simoen, E., IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/162374
Resumo: Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.
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spelling Random Telegraph Signal Noise in Advanced High Performance and Memory Devicesrandom telegraph signaltime lag plotReRAMslow frequency noiseinterface trapsUTBB SOIoxide trapsRandom Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.Imec, Leuven, BelgiumKatholieke Univ Leuven, EE Dept, Leuven, BelgiumUniv Estadual Paulista, Automat & Integrated Syst, Gasi, Sorocaba, BrazilLiverpool John Moores Univ, EE Dept, Liverpool L3 3AF, Merseyside, EnglandMicrosyst & Terahertz Res Ctr, Chengdu, Peoples R ChinaUniv Ghent, Dept Solid State Phys, Ghent, BelgiumUniv Estadual Paulista, Automat & Integrated Syst, Gasi, Sorocaba, BrazilIeeeImecKatholieke Univ LeuvenUniversidade Estadual Paulista (Unesp)Liverpool John Moores UnivMicrosyst & Terahertz Res CtrUniv GhentClaeys, C.Andrade, M. G. C. de [UNESP]Chai, Z.Fang, W.Govoreanu, B.Kaczer, B.Zhang, W.Simoen, E.IEEE2018-11-26T17:16:25Z2018-11-26T17:16:25Z2016-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject62016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 6 p., 2016.http://hdl.handle.net/11449/162374WOS:000392469000004Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2016 31st Symposium On Microelectronics Technology And Devices (sbmicro)info:eu-repo/semantics/openAccess2021-10-23T21:47:00Zoai:repositorio.unesp.br:11449/162374Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:13:53.917528Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
title Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
spellingShingle Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
Claeys, C.
random telegraph signal
time lag plot
ReRAMs
low frequency noise
interface traps
UTBB SOI
oxide traps
title_short Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
title_full Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
title_fullStr Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
title_full_unstemmed Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
title_sort Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
author Claeys, C.
author_facet Claeys, C.
Andrade, M. G. C. de [UNESP]
Chai, Z.
Fang, W.
Govoreanu, B.
Kaczer, B.
Zhang, W.
Simoen, E.
IEEE
author_role author
author2 Andrade, M. G. C. de [UNESP]
Chai, Z.
Fang, W.
Govoreanu, B.
Kaczer, B.
Zhang, W.
Simoen, E.
IEEE
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Imec
Katholieke Univ Leuven
Universidade Estadual Paulista (Unesp)
Liverpool John Moores Univ
Microsyst & Terahertz Res Ctr
Univ Ghent
dc.contributor.author.fl_str_mv Claeys, C.
Andrade, M. G. C. de [UNESP]
Chai, Z.
Fang, W.
Govoreanu, B.
Kaczer, B.
Zhang, W.
Simoen, E.
IEEE
dc.subject.por.fl_str_mv random telegraph signal
time lag plot
ReRAMs
low frequency noise
interface traps
UTBB SOI
oxide traps
topic random telegraph signal
time lag plot
ReRAMs
low frequency noise
interface traps
UTBB SOI
oxide traps
description Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.
publishDate 2016
dc.date.none.fl_str_mv 2016-01-01
2018-11-26T17:16:25Z
2018-11-26T17:16:25Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 6 p., 2016.
http://hdl.handle.net/11449/162374
WOS:000392469000004
identifier_str_mv 2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 6 p., 2016.
WOS:000392469000004
url http://hdl.handle.net/11449/162374
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2016 31st Symposium On Microelectronics Technology And Devices (sbmicro)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 6
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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