Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructures
Autor(a) principal: | |
---|---|
Data de Publicação: | 2020 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.matchemphys.2020.123510 http://hdl.handle.net/11449/199171 |
Resumo: | Er-doped SnO2 thin films are produced by a combined technique where films are deposited by resistive evaporation from a precursor powder obtained by sol-gel. Films are deposited on different substrates and analyzed concerning the electrical conduction on different directions. The film conductivity (parallel to the surface) changed significantly when exposed to light, even though the photon energies are below the SnO2 bandgap energy (InGaN LED, 2.75 eV). The SnO2 films present distinct trapping characteristics when exposed to oxygen or carbon monoxide, in agreement with the behavior of metallic oxides, suggesting that surface defects act as adsorption sites. The photo-excitation is rather lower for a GaAs/SnO2 heterostructure sample where the GaAs layer is deposited by sputtering, since the direction of polarization (through the interface barrier, perpendicular to the sample surface) does not lead to significant increase in the sample current. When the bottom layer is a GaAs crystal wafer, the current magnitude increases drastically under the InGaN LED excitation. The results reported here contribute to the understanding of electrical transport and the influence of gas adsorption on evaporated SnO2 films deposited in diverse configurations on distinct substrates, and contributes to gas sensing applications. |
id |
UNSP_8338b8b3f834fd0017b6db3705db53bb |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/199171 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructuresElectrical transportGallium arsenideGas sensingHeterostructureTin dioxideEr-doped SnO2 thin films are produced by a combined technique where films are deposited by resistive evaporation from a precursor powder obtained by sol-gel. Films are deposited on different substrates and analyzed concerning the electrical conduction on different directions. The film conductivity (parallel to the surface) changed significantly when exposed to light, even though the photon energies are below the SnO2 bandgap energy (InGaN LED, 2.75 eV). The SnO2 films present distinct trapping characteristics when exposed to oxygen or carbon monoxide, in agreement with the behavior of metallic oxides, suggesting that surface defects act as adsorption sites. The photo-excitation is rather lower for a GaAs/SnO2 heterostructure sample where the GaAs layer is deposited by sputtering, since the direction of polarization (through the interface barrier, perpendicular to the sample surface) does not lead to significant increase in the sample current. When the bottom layer is a GaAs crystal wafer, the current magnitude increases drastically under the InGaN LED excitation. The results reported here contribute to the understanding of electrical transport and the influence of gas adsorption on evaporated SnO2 films deposited in diverse configurations on distinct substrates, and contributes to gas sensing applications.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)UNESP São Paulo State University Department of Physics FC and Graduate Program in Materials Science and Technology (POSMAT)UNESP São Paulo State University Department of Physics FC and Graduate Program in Materials Science and Technology (POSMAT)FAPESP: 2016/12216-6FAPESP: 2017/18916-2Universidade Estadual Paulista (Unesp)Machado, Diego H.O. [UNESP]da Silva, José H.D. [UNESP]Russo, Fabrício T. [UNESP]Scalvi, Luis V.A. [UNESP]2020-12-12T01:32:39Z2020-12-12T01:32:39Z2020-11-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.matchemphys.2020.123510Materials Chemistry and Physics, v. 255.0254-0584http://hdl.handle.net/11449/19917110.1016/j.matchemphys.2020.1235102-s2.0-85088650483Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Chemistry and Physicsinfo:eu-repo/semantics/openAccess2021-10-23T04:23:57Zoai:repositorio.unesp.br:11449/199171Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:00:57.065713Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructures |
title |
Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructures |
spellingShingle |
Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructures Machado, Diego H.O. [UNESP] Electrical transport Gallium arsenide Gas sensing Heterostructure Tin dioxide |
title_short |
Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructures |
title_full |
Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructures |
title_fullStr |
Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructures |
title_full_unstemmed |
Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructures |
title_sort |
Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructures |
author |
Machado, Diego H.O. [UNESP] |
author_facet |
Machado, Diego H.O. [UNESP] da Silva, José H.D. [UNESP] Russo, Fabrício T. [UNESP] Scalvi, Luis V.A. [UNESP] |
author_role |
author |
author2 |
da Silva, José H.D. [UNESP] Russo, Fabrício T. [UNESP] Scalvi, Luis V.A. [UNESP] |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Machado, Diego H.O. [UNESP] da Silva, José H.D. [UNESP] Russo, Fabrício T. [UNESP] Scalvi, Luis V.A. [UNESP] |
dc.subject.por.fl_str_mv |
Electrical transport Gallium arsenide Gas sensing Heterostructure Tin dioxide |
topic |
Electrical transport Gallium arsenide Gas sensing Heterostructure Tin dioxide |
description |
Er-doped SnO2 thin films are produced by a combined technique where films are deposited by resistive evaporation from a precursor powder obtained by sol-gel. Films are deposited on different substrates and analyzed concerning the electrical conduction on different directions. The film conductivity (parallel to the surface) changed significantly when exposed to light, even though the photon energies are below the SnO2 bandgap energy (InGaN LED, 2.75 eV). The SnO2 films present distinct trapping characteristics when exposed to oxygen or carbon monoxide, in agreement with the behavior of metallic oxides, suggesting that surface defects act as adsorption sites. The photo-excitation is rather lower for a GaAs/SnO2 heterostructure sample where the GaAs layer is deposited by sputtering, since the direction of polarization (through the interface barrier, perpendicular to the sample surface) does not lead to significant increase in the sample current. When the bottom layer is a GaAs crystal wafer, the current magnitude increases drastically under the InGaN LED excitation. The results reported here contribute to the understanding of electrical transport and the influence of gas adsorption on evaporated SnO2 films deposited in diverse configurations on distinct substrates, and contributes to gas sensing applications. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-12-12T01:32:39Z 2020-12-12T01:32:39Z 2020-11-15 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.matchemphys.2020.123510 Materials Chemistry and Physics, v. 255. 0254-0584 http://hdl.handle.net/11449/199171 10.1016/j.matchemphys.2020.123510 2-s2.0-85088650483 |
url |
http://dx.doi.org/10.1016/j.matchemphys.2020.123510 http://hdl.handle.net/11449/199171 |
identifier_str_mv |
Materials Chemistry and Physics, v. 255. 0254-0584 10.1016/j.matchemphys.2020.123510 2-s2.0-85088650483 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Materials Chemistry and Physics |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129011784613888 |