Fabricação e caracterização de dispositivos eletroluminescentes produzidos com compósitos

• Autor(a) principal: Feres, Flávio Henrique [UNESP]
• Data de Publicação: 2017
• Tipo de documento: Trabalho de conclusão de curso
• Idioma: por
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://hdl.handle.net/11449/156975; http://www.athena.biblioteca.unesp.br/exlibris/bd/capelo/2018-08-30/000906271.pdf
• topic: Polímeros; Eletroluminescencia; Compósitos poliméricos; Condutores organicos; Polimeros condutores; Silicatos; Zinco; Manganes; Eletrodos

Soluble electronic materials have been intensively investigated in the past few years. Their solution processability, combined with specific electronic properties have made them candidates for large areas and low cost electronic devices. Additionally, composites comprising an organic polymeric conductive blend and an inorganic electroluminescent material, which can be processed by liquid route, have been employed as active material in light-emitting devices. Recently, was proposed a new light-emitting composite, which becomes non-soluble after processing by liquid route, comprising the conducting polymer poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), the ORMOSIL material 3-glicidoxypropyltrimethoxysilane (GPTMS) and the inorganic light-emitting powder of Mn-doped zinc silicate (Zn2SiO4:Mn). In the present study, the electro optical properties of light-emitting devices produced with composites comprising different weight fractions of PEDOT:PSS, GPTMS and Zn2SiO4:Mn were evaluated. The different light-emitting composites were coated over glass substrates containing ITO electrodes by drop-casting method and gold top electrodes were produced by thermal evaporation. The device produced with the composite (9.5/0.5/90 %-wt) showed the best performance with turnon voltages 33 V and 2.10³cd/m2 (at 300 V) with luminous efficacy of 24 cd/A. Additionally, were produced and characterized devices with different active layer thickness. Devices produced with active layer thickness on the range 100 μm to 150 μm, exhibited the best performance, with luminance of 103 cd⁄m² at 300 V. The devices turnon voltage have been obtained as proportional to the active layer thickness, indicating that the electroluminescence in the light-emitting devices occurs by a field effect mechanism turned on at electric fields with magnitudes of kV/cm order. Finally, the dependence of the electro optical properties of the devices on the temperatures was...