Silicon carbide surface modification by nitrogen plasma expander
Autor(a) principal: | |
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Data de Publicação: | 2012 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.4028/www.scientific.net/MSF.727-728.1428 http://hdl.handle.net/11449/9164 |
Resumo: | Silicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement. |
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Silicon carbide surface modification by nitrogen plasma expanderSiCYAGmechanical propertiesplasma expandernitrogenSEMAFMEDSSilicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement.UNESP, DFQ, Fac Engn, Guaratingueta, SP, BrazilUNESP, DFQ, Fac Engn, Guaratingueta, SP, BrazilTrans Tech Publications LtdUniversidade Estadual Paulista (Unesp)Santos, Carlos N. [UNESP]Marins, Eleasar M.Machida, Munemasade Campos, ElsonMota, Rogério Pinto [UNESP]Melo, Francisco C. L.Oliveira Hein, Luis R. [UNESP]2014-05-20T13:27:40Z2014-05-20T13:27:40Z2012-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject1428-1432http://dx.doi.org/10.4028/www.scientific.net/MSF.727-728.1428Advanced Powder Technology Viii, Pts 1 and 2. Stafa-zurich: Trans Tech Publications Ltd, v. 727-728, p. 1428-1432, 2012.0255-5476http://hdl.handle.net/11449/916410.4028/www.scientific.net/MSF.727-728.1428WOS:000310714100255Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengAdvanced Powder Technology Viii, Pts 1 and 20,180info:eu-repo/semantics/openAccess2024-07-01T20:52:56Zoai:repositorio.unesp.br:11449/9164Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:52:20.540048Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Silicon carbide surface modification by nitrogen plasma expander |
title |
Silicon carbide surface modification by nitrogen plasma expander |
spellingShingle |
Silicon carbide surface modification by nitrogen plasma expander Santos, Carlos N. [UNESP] SiC YAG mechanical properties plasma expander nitrogen SEM AFM EDS |
title_short |
Silicon carbide surface modification by nitrogen plasma expander |
title_full |
Silicon carbide surface modification by nitrogen plasma expander |
title_fullStr |
Silicon carbide surface modification by nitrogen plasma expander |
title_full_unstemmed |
Silicon carbide surface modification by nitrogen plasma expander |
title_sort |
Silicon carbide surface modification by nitrogen plasma expander |
author |
Santos, Carlos N. [UNESP] |
author_facet |
Santos, Carlos N. [UNESP] Marins, Eleasar M. Machida, Munemasa de Campos, Elson Mota, Rogério Pinto [UNESP] Melo, Francisco C. L. Oliveira Hein, Luis R. [UNESP] |
author_role |
author |
author2 |
Marins, Eleasar M. Machida, Munemasa de Campos, Elson Mota, Rogério Pinto [UNESP] Melo, Francisco C. L. Oliveira Hein, Luis R. [UNESP] |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Santos, Carlos N. [UNESP] Marins, Eleasar M. Machida, Munemasa de Campos, Elson Mota, Rogério Pinto [UNESP] Melo, Francisco C. L. Oliveira Hein, Luis R. [UNESP] |
dc.subject.por.fl_str_mv |
SiC YAG mechanical properties plasma expander nitrogen SEM AFM EDS |
topic |
SiC YAG mechanical properties plasma expander nitrogen SEM AFM EDS |
description |
Silicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement. |
publishDate |
2012 |
dc.date.none.fl_str_mv |
2012-01-01 2014-05-20T13:27:40Z 2014-05-20T13:27:40Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.4028/www.scientific.net/MSF.727-728.1428 Advanced Powder Technology Viii, Pts 1 and 2. Stafa-zurich: Trans Tech Publications Ltd, v. 727-728, p. 1428-1432, 2012. 0255-5476 http://hdl.handle.net/11449/9164 10.4028/www.scientific.net/MSF.727-728.1428 WOS:000310714100255 |
url |
http://dx.doi.org/10.4028/www.scientific.net/MSF.727-728.1428 http://hdl.handle.net/11449/9164 |
identifier_str_mv |
Advanced Powder Technology Viii, Pts 1 and 2. Stafa-zurich: Trans Tech Publications Ltd, v. 727-728, p. 1428-1432, 2012. 0255-5476 10.4028/www.scientific.net/MSF.727-728.1428 WOS:000310714100255 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Advanced Powder Technology Viii, Pts 1 and 2 0,180 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
1428-1432 |
dc.publisher.none.fl_str_mv |
Trans Tech Publications Ltd |
publisher.none.fl_str_mv |
Trans Tech Publications Ltd |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128427964760064 |