Silicon carbide surface modification by nitrogen plasma expander

Detalhes bibliográficos
Autor(a) principal: Santos, Carlos N. [UNESP]
Data de Publicação: 2012
Outros Autores: Marins, Eleasar M., Machida, Munemasa, de Campos, Elson, Mota, Rogério Pinto [UNESP], Melo, Francisco C. L., Oliveira Hein, Luis R. [UNESP]
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.4028/www.scientific.net/MSF.727-728.1428
http://hdl.handle.net/11449/9164
Resumo: Silicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement.
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spelling Silicon carbide surface modification by nitrogen plasma expanderSiCYAGmechanical propertiesplasma expandernitrogenSEMAFMEDSSilicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement.UNESP, DFQ, Fac Engn, Guaratingueta, SP, BrazilUNESP, DFQ, Fac Engn, Guaratingueta, SP, BrazilTrans Tech Publications LtdUniversidade Estadual Paulista (Unesp)Santos, Carlos N. [UNESP]Marins, Eleasar M.Machida, Munemasade Campos, ElsonMota, Rogério Pinto [UNESP]Melo, Francisco C. L.Oliveira Hein, Luis R. [UNESP]2014-05-20T13:27:40Z2014-05-20T13:27:40Z2012-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject1428-1432http://dx.doi.org/10.4028/www.scientific.net/MSF.727-728.1428Advanced Powder Technology Viii, Pts 1 and 2. Stafa-zurich: Trans Tech Publications Ltd, v. 727-728, p. 1428-1432, 2012.0255-5476http://hdl.handle.net/11449/916410.4028/www.scientific.net/MSF.727-728.1428WOS:000310714100255Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengAdvanced Powder Technology Viii, Pts 1 and 20,180info:eu-repo/semantics/openAccess2024-07-01T20:52:56Zoai:repositorio.unesp.br:11449/9164Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:52:20.540048Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Silicon carbide surface modification by nitrogen plasma expander
title Silicon carbide surface modification by nitrogen plasma expander
spellingShingle Silicon carbide surface modification by nitrogen plasma expander
Santos, Carlos N. [UNESP]
SiC
YAG
mechanical properties
plasma expander
nitrogen
SEM
AFM
EDS
title_short Silicon carbide surface modification by nitrogen plasma expander
title_full Silicon carbide surface modification by nitrogen plasma expander
title_fullStr Silicon carbide surface modification by nitrogen plasma expander
title_full_unstemmed Silicon carbide surface modification by nitrogen plasma expander
title_sort Silicon carbide surface modification by nitrogen plasma expander
author Santos, Carlos N. [UNESP]
author_facet Santos, Carlos N. [UNESP]
Marins, Eleasar M.
Machida, Munemasa
de Campos, Elson
Mota, Rogério Pinto [UNESP]
Melo, Francisco C. L.
Oliveira Hein, Luis R. [UNESP]
author_role author
author2 Marins, Eleasar M.
Machida, Munemasa
de Campos, Elson
Mota, Rogério Pinto [UNESP]
Melo, Francisco C. L.
Oliveira Hein, Luis R. [UNESP]
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Santos, Carlos N. [UNESP]
Marins, Eleasar M.
Machida, Munemasa
de Campos, Elson
Mota, Rogério Pinto [UNESP]
Melo, Francisco C. L.
Oliveira Hein, Luis R. [UNESP]
dc.subject.por.fl_str_mv SiC
YAG
mechanical properties
plasma expander
nitrogen
SEM
AFM
EDS
topic SiC
YAG
mechanical properties
plasma expander
nitrogen
SEM
AFM
EDS
description Silicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement.
publishDate 2012
dc.date.none.fl_str_mv 2012-01-01
2014-05-20T13:27:40Z
2014-05-20T13:27:40Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.4028/www.scientific.net/MSF.727-728.1428
Advanced Powder Technology Viii, Pts 1 and 2. Stafa-zurich: Trans Tech Publications Ltd, v. 727-728, p. 1428-1432, 2012.
0255-5476
http://hdl.handle.net/11449/9164
10.4028/www.scientific.net/MSF.727-728.1428
WOS:000310714100255
url http://dx.doi.org/10.4028/www.scientific.net/MSF.727-728.1428
http://hdl.handle.net/11449/9164
identifier_str_mv Advanced Powder Technology Viii, Pts 1 and 2. Stafa-zurich: Trans Tech Publications Ltd, v. 727-728, p. 1428-1432, 2012.
0255-5476
10.4028/www.scientific.net/MSF.727-728.1428
WOS:000310714100255
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Advanced Powder Technology Viii, Pts 1 and 2
0,180
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 1428-1432
dc.publisher.none.fl_str_mv Trans Tech Publications Ltd
publisher.none.fl_str_mv Trans Tech Publications Ltd
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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