A CMOS class-AB instrumentation amplifier for micropower applications

Detalhes bibliográficos
Autor(a) principal: De Lima, Jader A. [UNESP]
Data de Publicação: 1998
Outros Autores: Silva, Sidnei F. [UNESP]
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/ESSCIR.1998.186221
http://hdl.handle.net/11449/227549
Resumo: A simple micropower CMOS instrumentation amplifier comprising a double-input Gm-stage and a low-distortion class-AB output stage is presented. The amplifier was designed according to micropower techniques to achieve high values of low-frequency differential-gain and common-mode rejection and integrated in a digital-oriented 0.7μm n-Well CMOS process. For a bias current of 130nA, amplifier standby power consumption is 26μW. Measurements revealed good characteristics at DC and low frequencies such as A dm=87dB and CMRR=-137dB. For a compensation capacitor of 4.5pF, it was found ΦM=73° and a unity-gain frequency of 47KHz. Offset voltage was below 0.7mV, typically. Resistive loads down to 10KΩ can be driven with a 1.3V peak-to-peak swing. Overall linearity is represented by a THD of - 42.9dB. Although bandwidth limitation occurs due to small bias currents, the proposed amplified can be advantageously employed in many control and low-frequency signal processing. © 1998 Editions Frontieres.
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spelling A CMOS class-AB instrumentation amplifier for micropower applicationsA simple micropower CMOS instrumentation amplifier comprising a double-input Gm-stage and a low-distortion class-AB output stage is presented. The amplifier was designed according to micropower techniques to achieve high values of low-frequency differential-gain and common-mode rejection and integrated in a digital-oriented 0.7μm n-Well CMOS process. For a bias current of 130nA, amplifier standby power consumption is 26μW. Measurements revealed good characteristics at DC and low frequencies such as A dm=87dB and CMRR=-137dB. For a compensation capacitor of 4.5pF, it was found ΦM=73° and a unity-gain frequency of 47KHz. Offset voltage was below 0.7mV, typically. Resistive loads down to 10KΩ can be driven with a 1.3V peak-to-peak swing. Overall linearity is represented by a THD of - 42.9dB. Although bandwidth limitation occurs due to small bias currents, the proposed amplified can be advantageously employed in many control and low-frequency signal processing. © 1998 Editions Frontieres.Electrical Engineering Department Universidade Estadual Paulista, 12500-000 GuaratinguetaElectrical Engineering Department Universidade Estadual Paulista, 12500-000 GuaratinguetaUniversidade Estadual Paulista (UNESP)De Lima, Jader A. [UNESP]Silva, Sidnei F. [UNESP]2022-04-29T07:13:51Z2022-04-29T07:13:51Z1998-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject112-115http://dx.doi.org/10.1109/ESSCIR.1998.186221European Solid-State Circuits Conference, p. 112-115.1930-8833http://hdl.handle.net/11449/22754910.1109/ESSCIR.1998.1862212-s2.0-84893746570Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengEuropean Solid-State Circuits Conferenceinfo:eu-repo/semantics/openAccess2024-07-01T20:12:34Zoai:repositorio.unesp.br:11449/227549Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:56:46.846502Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv A CMOS class-AB instrumentation amplifier for micropower applications
title A CMOS class-AB instrumentation amplifier for micropower applications
spellingShingle A CMOS class-AB instrumentation amplifier for micropower applications
De Lima, Jader A. [UNESP]
title_short A CMOS class-AB instrumentation amplifier for micropower applications
title_full A CMOS class-AB instrumentation amplifier for micropower applications
title_fullStr A CMOS class-AB instrumentation amplifier for micropower applications
title_full_unstemmed A CMOS class-AB instrumentation amplifier for micropower applications
title_sort A CMOS class-AB instrumentation amplifier for micropower applications
author De Lima, Jader A. [UNESP]
author_facet De Lima, Jader A. [UNESP]
Silva, Sidnei F. [UNESP]
author_role author
author2 Silva, Sidnei F. [UNESP]
author2_role author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
dc.contributor.author.fl_str_mv De Lima, Jader A. [UNESP]
Silva, Sidnei F. [UNESP]
description A simple micropower CMOS instrumentation amplifier comprising a double-input Gm-stage and a low-distortion class-AB output stage is presented. The amplifier was designed according to micropower techniques to achieve high values of low-frequency differential-gain and common-mode rejection and integrated in a digital-oriented 0.7μm n-Well CMOS process. For a bias current of 130nA, amplifier standby power consumption is 26μW. Measurements revealed good characteristics at DC and low frequencies such as A dm=87dB and CMRR=-137dB. For a compensation capacitor of 4.5pF, it was found ΦM=73° and a unity-gain frequency of 47KHz. Offset voltage was below 0.7mV, typically. Resistive loads down to 10KΩ can be driven with a 1.3V peak-to-peak swing. Overall linearity is represented by a THD of - 42.9dB. Although bandwidth limitation occurs due to small bias currents, the proposed amplified can be advantageously employed in many control and low-frequency signal processing. © 1998 Editions Frontieres.
publishDate 1998
dc.date.none.fl_str_mv 1998-12-01
2022-04-29T07:13:51Z
2022-04-29T07:13:51Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/ESSCIR.1998.186221
European Solid-State Circuits Conference, p. 112-115.
1930-8833
http://hdl.handle.net/11449/227549
10.1109/ESSCIR.1998.186221
2-s2.0-84893746570
url http://dx.doi.org/10.1109/ESSCIR.1998.186221
http://hdl.handle.net/11449/227549
identifier_str_mv European Solid-State Circuits Conference, p. 112-115.
1930-8833
10.1109/ESSCIR.1998.186221
2-s2.0-84893746570
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv European Solid-State Circuits Conference
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 112-115
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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