A CMOS class-AB instrumentation amplifier for micropower applications
Autor(a) principal: | |
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Data de Publicação: | 1998 |
Outros Autores: | |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/ESSCIR.1998.186221 http://hdl.handle.net/11449/227549 |
Resumo: | A simple micropower CMOS instrumentation amplifier comprising a double-input Gm-stage and a low-distortion class-AB output stage is presented. The amplifier was designed according to micropower techniques to achieve high values of low-frequency differential-gain and common-mode rejection and integrated in a digital-oriented 0.7μm n-Well CMOS process. For a bias current of 130nA, amplifier standby power consumption is 26μW. Measurements revealed good characteristics at DC and low frequencies such as A dm=87dB and CMRR=-137dB. For a compensation capacitor of 4.5pF, it was found ΦM=73° and a unity-gain frequency of 47KHz. Offset voltage was below 0.7mV, typically. Resistive loads down to 10KΩ can be driven with a 1.3V peak-to-peak swing. Overall linearity is represented by a THD of - 42.9dB. Although bandwidth limitation occurs due to small bias currents, the proposed amplified can be advantageously employed in many control and low-frequency signal processing. © 1998 Editions Frontieres. |
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Repositório Institucional da UNESP |
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spelling |
A CMOS class-AB instrumentation amplifier for micropower applicationsA simple micropower CMOS instrumentation amplifier comprising a double-input Gm-stage and a low-distortion class-AB output stage is presented. The amplifier was designed according to micropower techniques to achieve high values of low-frequency differential-gain and common-mode rejection and integrated in a digital-oriented 0.7μm n-Well CMOS process. For a bias current of 130nA, amplifier standby power consumption is 26μW. Measurements revealed good characteristics at DC and low frequencies such as A dm=87dB and CMRR=-137dB. For a compensation capacitor of 4.5pF, it was found ΦM=73° and a unity-gain frequency of 47KHz. Offset voltage was below 0.7mV, typically. Resistive loads down to 10KΩ can be driven with a 1.3V peak-to-peak swing. Overall linearity is represented by a THD of - 42.9dB. Although bandwidth limitation occurs due to small bias currents, the proposed amplified can be advantageously employed in many control and low-frequency signal processing. © 1998 Editions Frontieres.Electrical Engineering Department Universidade Estadual Paulista, 12500-000 GuaratinguetaElectrical Engineering Department Universidade Estadual Paulista, 12500-000 GuaratinguetaUniversidade Estadual Paulista (UNESP)De Lima, Jader A. [UNESP]Silva, Sidnei F. [UNESP]2022-04-29T07:13:51Z2022-04-29T07:13:51Z1998-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject112-115http://dx.doi.org/10.1109/ESSCIR.1998.186221European Solid-State Circuits Conference, p. 112-115.1930-8833http://hdl.handle.net/11449/22754910.1109/ESSCIR.1998.1862212-s2.0-84893746570Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengEuropean Solid-State Circuits Conferenceinfo:eu-repo/semantics/openAccess2024-07-01T20:12:34Zoai:repositorio.unesp.br:11449/227549Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:56:46.846502Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
A CMOS class-AB instrumentation amplifier for micropower applications |
title |
A CMOS class-AB instrumentation amplifier for micropower applications |
spellingShingle |
A CMOS class-AB instrumentation amplifier for micropower applications De Lima, Jader A. [UNESP] |
title_short |
A CMOS class-AB instrumentation amplifier for micropower applications |
title_full |
A CMOS class-AB instrumentation amplifier for micropower applications |
title_fullStr |
A CMOS class-AB instrumentation amplifier for micropower applications |
title_full_unstemmed |
A CMOS class-AB instrumentation amplifier for micropower applications |
title_sort |
A CMOS class-AB instrumentation amplifier for micropower applications |
author |
De Lima, Jader A. [UNESP] |
author_facet |
De Lima, Jader A. [UNESP] Silva, Sidnei F. [UNESP] |
author_role |
author |
author2 |
Silva, Sidnei F. [UNESP] |
author2_role |
author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (UNESP) |
dc.contributor.author.fl_str_mv |
De Lima, Jader A. [UNESP] Silva, Sidnei F. [UNESP] |
description |
A simple micropower CMOS instrumentation amplifier comprising a double-input Gm-stage and a low-distortion class-AB output stage is presented. The amplifier was designed according to micropower techniques to achieve high values of low-frequency differential-gain and common-mode rejection and integrated in a digital-oriented 0.7μm n-Well CMOS process. For a bias current of 130nA, amplifier standby power consumption is 26μW. Measurements revealed good characteristics at DC and low frequencies such as A dm=87dB and CMRR=-137dB. For a compensation capacitor of 4.5pF, it was found ΦM=73° and a unity-gain frequency of 47KHz. Offset voltage was below 0.7mV, typically. Resistive loads down to 10KΩ can be driven with a 1.3V peak-to-peak swing. Overall linearity is represented by a THD of - 42.9dB. Although bandwidth limitation occurs due to small bias currents, the proposed amplified can be advantageously employed in many control and low-frequency signal processing. © 1998 Editions Frontieres. |
publishDate |
1998 |
dc.date.none.fl_str_mv |
1998-12-01 2022-04-29T07:13:51Z 2022-04-29T07:13:51Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/ESSCIR.1998.186221 European Solid-State Circuits Conference, p. 112-115. 1930-8833 http://hdl.handle.net/11449/227549 10.1109/ESSCIR.1998.186221 2-s2.0-84893746570 |
url |
http://dx.doi.org/10.1109/ESSCIR.1998.186221 http://hdl.handle.net/11449/227549 |
identifier_str_mv |
European Solid-State Circuits Conference, p. 112-115. 1930-8833 10.1109/ESSCIR.1998.186221 2-s2.0-84893746570 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
European Solid-State Circuits Conference |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
112-115 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129141625585664 |