Zn1-xMgxO nanoparticles prepared by the polymeric precursor method: Correlation between photoluminescence and local structure
Autor(a) principal: | |
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Data de Publicação: | 2018 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.optmat.2018.09.044 http://hdl.handle.net/11449/188134 |
Resumo: | ZnO is an n-type semiconductor having a wide band gap which has been studied as green phosphors because of its luminescence properties, although the centers and mechanisms responsible for its luminescence are still a matter of controversy. Band gap engineering of ZnO can be achieved by the incorporation of Mg atoms, resulting in the modification of the deep level emission in the visible region. In this study, nanostructured Zn1-xMgxO samples were prepared through the polymeric precursor method and their structural and photoluminescent properties were characterized. FE-SEM images reveal a polygonal morphology of ZnO nanoparticles and a uniform particle size ranging from 35 to for 91 nm depending on the annealing temperature. XRD results show that Zn1-xMgxO samples crystallized completely without the presence of secondary phases (up to 20 at. %) and the diffraction patterns correspond to the hexagonal wurtzite structure with P63mc space. Theoretical and experimental XANES spectra at Zn K-edge along FTIR measurements suggest occurrence of O vacancies. These vacancies are related to the green emission of photoluminescence spectra for ZnO samples, which is centered at ∼529 nm. As the Mg content increases, an enhancement of this emission is observed, which is associated with the recombination of electrons in Mg interstitials donor states and holes at Zn vacancies. |
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Zn1-xMgxO nanoparticles prepared by the polymeric precursor method: Correlation between photoluminescence and local structureEXAFSFE-SEMFTIRPhotoluminescencePolymeric precursor methodXANESZ1-xMgxOZnOZnO is an n-type semiconductor having a wide band gap which has been studied as green phosphors because of its luminescence properties, although the centers and mechanisms responsible for its luminescence are still a matter of controversy. Band gap engineering of ZnO can be achieved by the incorporation of Mg atoms, resulting in the modification of the deep level emission in the visible region. In this study, nanostructured Zn1-xMgxO samples were prepared through the polymeric precursor method and their structural and photoluminescent properties were characterized. FE-SEM images reveal a polygonal morphology of ZnO nanoparticles and a uniform particle size ranging from 35 to for 91 nm depending on the annealing temperature. XRD results show that Zn1-xMgxO samples crystallized completely without the presence of secondary phases (up to 20 at. %) and the diffraction patterns correspond to the hexagonal wurtzite structure with P63mc space. Theoretical and experimental XANES spectra at Zn K-edge along FTIR measurements suggest occurrence of O vacancies. These vacancies are related to the green emission of photoluminescence spectra for ZnO samples, which is centered at ∼529 nm. As the Mg content increases, an enhancement of this emission is observed, which is associated with the recombination of electrons in Mg interstitials donor states and holes at Zn vacancies.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Universidade Estadual Paulista (Unesp) Instituto de Geociências e Ciências Exatas Departamento de FísicaUniversidade de São Paulo Instituto de Física de São Carlos, São CarlosUniversidade Estadual Paulista (Unesp) Instituto de Geociências e Ciências Exatas Departamento de FísicaUniversidade Estadual Paulista (Unesp)Universidade de São Paulo (USP)Cury de Oliveira, Rodrigo [UNESP]Martins, Denis Expedito [UNESP]Basso Bernardi, Maria InêsMesquita, Alexandre [UNESP]2019-10-06T15:58:23Z2019-10-06T15:58:23Z2018-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article71-78http://dx.doi.org/10.1016/j.optmat.2018.09.044Optical Materials, v. 86, p. 71-78.0925-3467http://hdl.handle.net/11449/18813410.1016/j.optmat.2018.09.0442-s2.0-85054180507Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengOptical Materialsinfo:eu-repo/semantics/openAccess2021-10-23T10:02:18Zoai:repositorio.unesp.br:11449/188134Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-06T00:01:00.374994Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Zn1-xMgxO nanoparticles prepared by the polymeric precursor method: Correlation between photoluminescence and local structure |
title |
Zn1-xMgxO nanoparticles prepared by the polymeric precursor method: Correlation between photoluminescence and local structure |
spellingShingle |
Zn1-xMgxO nanoparticles prepared by the polymeric precursor method: Correlation between photoluminescence and local structure Cury de Oliveira, Rodrigo [UNESP] EXAFS FE-SEM FTIR Photoluminescence Polymeric precursor method XANES Z1-xMgxO ZnO |
title_short |
Zn1-xMgxO nanoparticles prepared by the polymeric precursor method: Correlation between photoluminescence and local structure |
title_full |
Zn1-xMgxO nanoparticles prepared by the polymeric precursor method: Correlation between photoluminescence and local structure |
title_fullStr |
Zn1-xMgxO nanoparticles prepared by the polymeric precursor method: Correlation between photoluminescence and local structure |
title_full_unstemmed |
Zn1-xMgxO nanoparticles prepared by the polymeric precursor method: Correlation between photoluminescence and local structure |
title_sort |
Zn1-xMgxO nanoparticles prepared by the polymeric precursor method: Correlation between photoluminescence and local structure |
author |
Cury de Oliveira, Rodrigo [UNESP] |
author_facet |
Cury de Oliveira, Rodrigo [UNESP] Martins, Denis Expedito [UNESP] Basso Bernardi, Maria Inês Mesquita, Alexandre [UNESP] |
author_role |
author |
author2 |
Martins, Denis Expedito [UNESP] Basso Bernardi, Maria Inês Mesquita, Alexandre [UNESP] |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Universidade de São Paulo (USP) |
dc.contributor.author.fl_str_mv |
Cury de Oliveira, Rodrigo [UNESP] Martins, Denis Expedito [UNESP] Basso Bernardi, Maria Inês Mesquita, Alexandre [UNESP] |
dc.subject.por.fl_str_mv |
EXAFS FE-SEM FTIR Photoluminescence Polymeric precursor method XANES Z1-xMgxO ZnO |
topic |
EXAFS FE-SEM FTIR Photoluminescence Polymeric precursor method XANES Z1-xMgxO ZnO |
description |
ZnO is an n-type semiconductor having a wide band gap which has been studied as green phosphors because of its luminescence properties, although the centers and mechanisms responsible for its luminescence are still a matter of controversy. Band gap engineering of ZnO can be achieved by the incorporation of Mg atoms, resulting in the modification of the deep level emission in the visible region. In this study, nanostructured Zn1-xMgxO samples were prepared through the polymeric precursor method and their structural and photoluminescent properties were characterized. FE-SEM images reveal a polygonal morphology of ZnO nanoparticles and a uniform particle size ranging from 35 to for 91 nm depending on the annealing temperature. XRD results show that Zn1-xMgxO samples crystallized completely without the presence of secondary phases (up to 20 at. %) and the diffraction patterns correspond to the hexagonal wurtzite structure with P63mc space. Theoretical and experimental XANES spectra at Zn K-edge along FTIR measurements suggest occurrence of O vacancies. These vacancies are related to the green emission of photoluminescence spectra for ZnO samples, which is centered at ∼529 nm. As the Mg content increases, an enhancement of this emission is observed, which is associated with the recombination of electrons in Mg interstitials donor states and holes at Zn vacancies. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-12-01 2019-10-06T15:58:23Z 2019-10-06T15:58:23Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.optmat.2018.09.044 Optical Materials, v. 86, p. 71-78. 0925-3467 http://hdl.handle.net/11449/188134 10.1016/j.optmat.2018.09.044 2-s2.0-85054180507 |
url |
http://dx.doi.org/10.1016/j.optmat.2018.09.044 http://hdl.handle.net/11449/188134 |
identifier_str_mv |
Optical Materials, v. 86, p. 71-78. 0925-3467 10.1016/j.optmat.2018.09.044 2-s2.0-85054180507 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Optical Materials |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
71-78 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129573384093696 |