Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

Detalhes bibliográficos
Autor(a) principal: Alves, Neri [UNESP]
Data de Publicação: 2008
Outros Autores: Taylor, D. M.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1063/1.2897238
http://hdl.handle.net/11449/6851
Resumo: Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.
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spelling Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.Bangor Univ, Sch Elect Engn, Bangor LL57 1UT, Gwynedd, WalesAmerican Institute of Physics (AIP)Bangor UnivUniversidade Estadual Paulista (Unesp)Alves, Neri [UNESP]Taylor, D. M.2014-05-20T13:23:00Z2014-05-20T13:23:00Z2008-03-10info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article3application/pdfhttp://dx.doi.org/10.1063/1.2897238Applied Physics Letters. Melville: Amer Inst Physics, v. 92, n. 10, p. 3, 2008.0003-6951http://hdl.handle.net/11449/685110.1063/1.2897238WOS:000253989300140WOS000253989300140.pdf76076511116192690000-0001-8001-301XWeb of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengApplied Physics Letters3.4951,382info:eu-repo/semantics/openAccess2023-11-16T06:09:03Zoai:repositorio.unesp.br:11449/6851Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-11-16T06:09:03Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
title Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
spellingShingle Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
Alves, Neri [UNESP]
title_short Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
title_full Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
title_fullStr Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
title_full_unstemmed Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
title_sort Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)
author Alves, Neri [UNESP]
author_facet Alves, Neri [UNESP]
Taylor, D. M.
author_role author
author2 Taylor, D. M.
author2_role author
dc.contributor.none.fl_str_mv Bangor Univ
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Alves, Neri [UNESP]
Taylor, D. M.
description Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.
publishDate 2008
dc.date.none.fl_str_mv 2008-03-10
2014-05-20T13:23:00Z
2014-05-20T13:23:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1063/1.2897238
Applied Physics Letters. Melville: Amer Inst Physics, v. 92, n. 10, p. 3, 2008.
0003-6951
http://hdl.handle.net/11449/6851
10.1063/1.2897238
WOS:000253989300140
WOS000253989300140.pdf
7607651111619269
0000-0001-8001-301X
url http://dx.doi.org/10.1063/1.2897238
http://hdl.handle.net/11449/6851
identifier_str_mv Applied Physics Letters. Melville: Amer Inst Physics, v. 92, n. 10, p. 3, 2008.
0003-6951
10.1063/1.2897238
WOS:000253989300140
WOS000253989300140.pdf
7607651111619269
0000-0001-8001-301X
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Applied Physics Letters
3.495
1,382
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics (AIP)
publisher.none.fl_str_mv American Institute of Physics (AIP)
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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