Resistive state of a thin superconducting strip with an engineered central defect
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1140/epjb/e2019-100082-y http://hdl.handle.net/11449/185850 |
Resumo: | We study the resistive state of a mesoscopic superconducting strip with an engineered defect at the center. The defect is another superconductor with a different critical temperature. Several geometrical shapes of the defect are studied. The strip is considered under a transport electrical current, J(a), and at zero external applied magnetic field. The current is applied through a metallic contact, and the defect is simulated with the phenomenological parameter (T) = (0)(T - T-c(r)) in the Ginzburg-Landau free energy density. Here T-c(r) = T-c,T-0 + T(r), where T(r) < 0 (T(r) > 0) corresponds to a domain of lower (higher) critical temperature. It is shown that the critical current density for the I-V characteristic curve, J(c1), at which the first vortex-antivortex (V-Av) pair nucleates in the sample, as well as its dynamics, strongly depend on the critical temperature, the position, and the geometry of the defect. |
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Repositório Institucional da UNESP |
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Resistive state of a thin superconducting strip with an engineered central defectSolid State and MaterialsWe study the resistive state of a mesoscopic superconducting strip with an engineered defect at the center. The defect is another superconductor with a different critical temperature. Several geometrical shapes of the defect are studied. The strip is considered under a transport electrical current, J(a), and at zero external applied magnetic field. The current is applied through a metallic contact, and the defect is simulated with the phenomenological parameter (T) = (0)(T - T-c(r)) in the Ginzburg-Landau free energy density. Here T-c(r) = T-c,T-0 + T(r), where T(r) < 0 (T(r) > 0) corresponds to a domain of lower (higher) critical temperature. It is shown that the critical current density for the I-V characteristic curve, J(c1), at which the first vortex-antivortex (V-Av) pair nucleates in the sample, as well as its dynamics, strongly depend on the critical temperature, the position, and the geometry of the defect.Univ Nacl Colombia, Dept Fis, Bogota, ColombiaUniv Estadual Paulista, Dept Fis, Fac Ciencias, Caixa Postal 473, BR-17033360 Bauru, SP, BrazilUniv Estadual Paulista, Dept Fis, Fac Ciencias, Caixa Postal 473, BR-17033360 Bauru, SP, BrazilSpringerUniv Nacl ColombiaUniversidade Estadual Paulista (Unesp)Barba-Ortega, JoseJoya, Miryam R.Sardella, Edson [UNESP]2019-10-04T12:39:09Z2019-10-04T12:39:09Z2019-07-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article6http://dx.doi.org/10.1140/epjb/e2019-100082-yEuropean Physical Journal B. New York: Springer, v. 92, n. 7, 6 p., 2019.1434-6028http://hdl.handle.net/11449/18585010.1140/epjb/e2019-100082-yWOS:00047320610000177992536461198890000-0001-7041-8136Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengEuropean Physical Journal Binfo:eu-repo/semantics/openAccess2024-04-25T17:39:51Zoai:repositorio.unesp.br:11449/185850Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:23:34.598442Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Resistive state of a thin superconducting strip with an engineered central defect |
title |
Resistive state of a thin superconducting strip with an engineered central defect |
spellingShingle |
Resistive state of a thin superconducting strip with an engineered central defect Barba-Ortega, Jose Solid State and Materials |
title_short |
Resistive state of a thin superconducting strip with an engineered central defect |
title_full |
Resistive state of a thin superconducting strip with an engineered central defect |
title_fullStr |
Resistive state of a thin superconducting strip with an engineered central defect |
title_full_unstemmed |
Resistive state of a thin superconducting strip with an engineered central defect |
title_sort |
Resistive state of a thin superconducting strip with an engineered central defect |
author |
Barba-Ortega, Jose |
author_facet |
Barba-Ortega, Jose Joya, Miryam R. Sardella, Edson [UNESP] |
author_role |
author |
author2 |
Joya, Miryam R. Sardella, Edson [UNESP] |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Univ Nacl Colombia Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Barba-Ortega, Jose Joya, Miryam R. Sardella, Edson [UNESP] |
dc.subject.por.fl_str_mv |
Solid State and Materials |
topic |
Solid State and Materials |
description |
We study the resistive state of a mesoscopic superconducting strip with an engineered defect at the center. The defect is another superconductor with a different critical temperature. Several geometrical shapes of the defect are studied. The strip is considered under a transport electrical current, J(a), and at zero external applied magnetic field. The current is applied through a metallic contact, and the defect is simulated with the phenomenological parameter (T) = (0)(T - T-c(r)) in the Ginzburg-Landau free energy density. Here T-c(r) = T-c,T-0 + T(r), where T(r) < 0 (T(r) > 0) corresponds to a domain of lower (higher) critical temperature. It is shown that the critical current density for the I-V characteristic curve, J(c1), at which the first vortex-antivortex (V-Av) pair nucleates in the sample, as well as its dynamics, strongly depend on the critical temperature, the position, and the geometry of the defect. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-10-04T12:39:09Z 2019-10-04T12:39:09Z 2019-07-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1140/epjb/e2019-100082-y European Physical Journal B. New York: Springer, v. 92, n. 7, 6 p., 2019. 1434-6028 http://hdl.handle.net/11449/185850 10.1140/epjb/e2019-100082-y WOS:000473206100001 7799253646119889 0000-0001-7041-8136 |
url |
http://dx.doi.org/10.1140/epjb/e2019-100082-y http://hdl.handle.net/11449/185850 |
identifier_str_mv |
European Physical Journal B. New York: Springer, v. 92, n. 7, 6 p., 2019. 1434-6028 10.1140/epjb/e2019-100082-y WOS:000473206100001 7799253646119889 0000-0001-7041-8136 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
European Physical Journal B |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
6 |
dc.publisher.none.fl_str_mv |
Springer |
publisher.none.fl_str_mv |
Springer |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128803939024896 |