Edge phonons in black phosphorus

• Autor(a) principal: Ribeiro, H. B.
• Data de Publicação: 2016
• Outros Autores: Villegas, C. E.P. [UNESP], Bahamon, D. A., Muraca, D., Castro Neto, A. H., De Souza, E. A.T., Rocha, A. R. [UNESP], Pimenta, M. A., De Matos, C. J.S.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.1038/ncomms12191; http://hdl.handle.net/11449/173245

Black phosphorus has recently emerged as a new layered crystal that, due to its peculiar and anisotropic crystalline and electronic band structures, may have important applications in electronics, optoelectronics and photonics. Despite the fact that the edges of layered crystals host a range of singular properties whose characterization and exploitation are of utmost importance for device development, the edges of black phosphorus remain poorly characterized. In this work, the atomic structure and behaviour of phonons near different black phosphorus edges are experimentally and theoretically studied using Raman spectroscopy and density functional theory calculations. Polarized Raman results show the appearance of new modes at the edges of the sample, and their spectra depend on the atomic structure of the edges (zigzag or armchair). Theoretical simulations confirm that the new modes are due to edge phonon states that are forbidden in the bulk, and originated from the lattice termination rearrangements.