Generation and recombination of free-carriers in silicon nano-waveguides
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1117/12.2513720 http://hdl.handle.net/11449/184526 |
Resumo: | Generation and recombination of free carriers in silicon photonics is fundamental to understand several nonlinear optical phenomena and engineer novel devices. Particularly in strip nano-waveguides, the tightly confined optical field results in highly efficient generation of free-carriers, both through linear and nonlinear absorption. Furthermore, the large surface-to-volume ratio results in a nonlinear recombination behavior dominated by a trap-assisted mechanism. Through time-resolved pump-and-probe experiments, we performed a detailed experimental characterization of linear and nonlinear generation rates, as well as recombination dynamics. We developed analytical expressions to determine the carrier density averaged along the waveguide from the measured free-carrier absorption for different input pump power levels. As a result, we were able to discriminate the contributions from two-photon absorption (TPA) and single-photon absorption (SPA), obtaining absorption coefficients of (1.5 +/- 0.1) cm/GW and (1.9 +/- 0.1) m(-1), respectively. Our results then reveal that the effective TPA within the waveguide is higher than the value reported for bulk silicon, and that SPA plays an important role in carrier generation up to R.:300 mW. With regards to recombination dynamics, our results show a highly nonlinear decay curve with instantaneous carrier lifetime varying as the recombination evolves (initially faster with lifetime of 800 ps and slower at final stages of the decay, reaching 300 ns). We interpret our results with a theoretical framework based on trap-assisted recombination statistics applied to strip nano-waveguides, and explore its implication to the dynamics of nonlinear nanophotonic devices in which free carriers play a critical role. |
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Generation and recombination of free-carriers in silicon nano-waveguidesSemiconductorsilicon photonicstwo-photon absorptionfree-carrier generationfree-carrier recombinationGeneration and recombination of free carriers in silicon photonics is fundamental to understand several nonlinear optical phenomena and engineer novel devices. Particularly in strip nano-waveguides, the tightly confined optical field results in highly efficient generation of free-carriers, both through linear and nonlinear absorption. Furthermore, the large surface-to-volume ratio results in a nonlinear recombination behavior dominated by a trap-assisted mechanism. Through time-resolved pump-and-probe experiments, we performed a detailed experimental characterization of linear and nonlinear generation rates, as well as recombination dynamics. We developed analytical expressions to determine the carrier density averaged along the waveguide from the measured free-carrier absorption for different input pump power levels. As a result, we were able to discriminate the contributions from two-photon absorption (TPA) and single-photon absorption (SPA), obtaining absorption coefficients of (1.5 +/- 0.1) cm/GW and (1.9 +/- 0.1) m(-1), respectively. Our results then reveal that the effective TPA within the waveguide is higher than the value reported for bulk silicon, and that SPA plays an important role in carrier generation up to R.:300 mW. With regards to recombination dynamics, our results show a highly nonlinear decay curve with instantaneous carrier lifetime varying as the recombination evolves (initially faster with lifetime of 800 ps and slower at final stages of the decay, reaching 300 ns). We interpret our results with a theoretical framework based on trap-assisted recombination statistics applied to strip nano-waveguides, and explore its implication to the dynamics of nonlinear nanophotonic devices in which free carriers play a critical role.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Corning Res & Dev Corp, One Sci Dr, Corning, NY 14831 USAUniv Estadual Campinas, Campinas, SP, BrazilState Univ Sao Paulo, Sao Joao Da Boa Vista, SP, BrazilMackenzie Presbiterian Univ, R Maria Antonia, Sao Paulo, SP, BrazilState Univ Sao Paulo, Sao Joao Da Boa Vista, SP, BrazilFAPESP: 2008/57857FAPESP: 2012/50259-8FAPESP: 2015/11779-4FAPESP: 2015/04113-0FAPESP: 2013/20180-3CNPq: 574017/2008-9Spie-int Soc Optical EngineeringCorning Res & Dev CorpUniversidade Estadual de Campinas (UNICAMP)Universidade Estadual Paulista (Unesp)Mackenzie Presbiterian UnivDainese, PauloAldaya, Ivan [UNESP]Gil-Molina, AndresGabrielli, Lucas H.Fragnito, Hugo L.Pita, Julian L.Schroder, H.Chen, R. T.2019-10-04T12:14:17Z2019-10-04T12:14:17Z2019-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject7http://dx.doi.org/10.1117/12.2513720Optical Interconnects Xix. Bellingham: Spie-int Soc Optical Engineering, v. 10924, 7 p., 2019.0277-786Xhttp://hdl.handle.net/11449/18452610.1117/12.2513720WOS:000471818800022Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengOptical Interconnects Xixinfo:eu-repo/semantics/openAccess2021-10-22T21:54:16Zoai:repositorio.unesp.br:11449/184526Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-22T21:54:16Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Generation and recombination of free-carriers in silicon nano-waveguides |
title |
Generation and recombination of free-carriers in silicon nano-waveguides |
spellingShingle |
Generation and recombination of free-carriers in silicon nano-waveguides Dainese, Paulo Semiconductor silicon photonics two-photon absorption free-carrier generation free-carrier recombination |
title_short |
Generation and recombination of free-carriers in silicon nano-waveguides |
title_full |
Generation and recombination of free-carriers in silicon nano-waveguides |
title_fullStr |
Generation and recombination of free-carriers in silicon nano-waveguides |
title_full_unstemmed |
Generation and recombination of free-carriers in silicon nano-waveguides |
title_sort |
Generation and recombination of free-carriers in silicon nano-waveguides |
author |
Dainese, Paulo |
author_facet |
Dainese, Paulo Aldaya, Ivan [UNESP] Gil-Molina, Andres Gabrielli, Lucas H. Fragnito, Hugo L. Pita, Julian L. Schroder, H. Chen, R. T. |
author_role |
author |
author2 |
Aldaya, Ivan [UNESP] Gil-Molina, Andres Gabrielli, Lucas H. Fragnito, Hugo L. Pita, Julian L. Schroder, H. Chen, R. T. |
author2_role |
author author author author author author author |
dc.contributor.none.fl_str_mv |
Corning Res & Dev Corp Universidade Estadual de Campinas (UNICAMP) Universidade Estadual Paulista (Unesp) Mackenzie Presbiterian Univ |
dc.contributor.author.fl_str_mv |
Dainese, Paulo Aldaya, Ivan [UNESP] Gil-Molina, Andres Gabrielli, Lucas H. Fragnito, Hugo L. Pita, Julian L. Schroder, H. Chen, R. T. |
dc.subject.por.fl_str_mv |
Semiconductor silicon photonics two-photon absorption free-carrier generation free-carrier recombination |
topic |
Semiconductor silicon photonics two-photon absorption free-carrier generation free-carrier recombination |
description |
Generation and recombination of free carriers in silicon photonics is fundamental to understand several nonlinear optical phenomena and engineer novel devices. Particularly in strip nano-waveguides, the tightly confined optical field results in highly efficient generation of free-carriers, both through linear and nonlinear absorption. Furthermore, the large surface-to-volume ratio results in a nonlinear recombination behavior dominated by a trap-assisted mechanism. Through time-resolved pump-and-probe experiments, we performed a detailed experimental characterization of linear and nonlinear generation rates, as well as recombination dynamics. We developed analytical expressions to determine the carrier density averaged along the waveguide from the measured free-carrier absorption for different input pump power levels. As a result, we were able to discriminate the contributions from two-photon absorption (TPA) and single-photon absorption (SPA), obtaining absorption coefficients of (1.5 +/- 0.1) cm/GW and (1.9 +/- 0.1) m(-1), respectively. Our results then reveal that the effective TPA within the waveguide is higher than the value reported for bulk silicon, and that SPA plays an important role in carrier generation up to R.:300 mW. With regards to recombination dynamics, our results show a highly nonlinear decay curve with instantaneous carrier lifetime varying as the recombination evolves (initially faster with lifetime of 800 ps and slower at final stages of the decay, reaching 300 ns). We interpret our results with a theoretical framework based on trap-assisted recombination statistics applied to strip nano-waveguides, and explore its implication to the dynamics of nonlinear nanophotonic devices in which free carriers play a critical role. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-10-04T12:14:17Z 2019-10-04T12:14:17Z 2019-01-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1117/12.2513720 Optical Interconnects Xix. Bellingham: Spie-int Soc Optical Engineering, v. 10924, 7 p., 2019. 0277-786X http://hdl.handle.net/11449/184526 10.1117/12.2513720 WOS:000471818800022 |
url |
http://dx.doi.org/10.1117/12.2513720 http://hdl.handle.net/11449/184526 |
identifier_str_mv |
Optical Interconnects Xix. Bellingham: Spie-int Soc Optical Engineering, v. 10924, 7 p., 2019. 0277-786X 10.1117/12.2513720 WOS:000471818800022 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Optical Interconnects Xix |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
7 |
dc.publisher.none.fl_str_mv |
Spie-int Soc Optical Engineering |
publisher.none.fl_str_mv |
Spie-int Soc Optical Engineering |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1799964780670222336 |