Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC

Detalhes bibliográficos
Autor(a) principal: Leal, Joao V. C.
Data de Publicação: 2021
Outros Autores: Agopian, Paula G. D. [UNESP], Martino, Joao A.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/SBMicro50945.2021.9585738
http://hdl.handle.net/11449/223619
Resumo: The quantum effect on the Gate-All-Around Nanosheet (GAA NS) NMOS devices are studied in this paper from 200oC down to -100oC. The experimental results for different channel lengths (down to 28 nm) are used from 200oC to room temperature and the behavior down to -100oC is extrapolated using calibrated TCAD simulation. The quantum confinement is present in all devices, but only for the height h = 5nm case its contribution for the threshold voltage increase is more relevant. This increment is constant with the temperature, but it becomes proportionally more important for higher temperatures due to the VT decrease in such conditions. The subthreshold swing is not affected by the quantum model and its value is close to (kT/q)ln(10) in all cases, with the best results obtained for the lowest device height.
id UNSP_c603bb6591bc5b2843f58b5327a0a02b
oai_identifier_str oai:repositorio.unesp.br:11449/223619
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oCGaaNanosheetQuantum effectSubthreshold swingTemperatureThreshold voltageThe quantum effect on the Gate-All-Around Nanosheet (GAA NS) NMOS devices are studied in this paper from 200oC down to -100oC. The experimental results for different channel lengths (down to 28 nm) are used from 200oC to room temperature and the behavior down to -100oC is extrapolated using calibrated TCAD simulation. The quantum confinement is present in all devices, but only for the height h = 5nm case its contribution for the threshold voltage increase is more relevant. This increment is constant with the temperature, but it becomes proportionally more important for higher temperatures due to the VT decrease in such conditions. The subthreshold swing is not affected by the quantum model and its value is close to (kT/q)ln(10) in all cases, with the best results obtained for the lowest device height.University of Sao Paulo LSI/PSI/USPSao Paulo State University Unesp, Sao Joao da Boa VistaSao Paulo State University Unesp, Sao Joao da Boa VistaUniversidade de São Paulo (USP)Universidade Estadual Paulista (UNESP)Leal, Joao V. C.Agopian, Paula G. D. [UNESP]Martino, Joao A.2022-04-28T19:51:49Z2022-04-28T19:51:49Z2021-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMicro50945.2021.9585738SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices.http://hdl.handle.net/11449/22361910.1109/SBMicro50945.2021.95857382-s2.0-85126138208Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSBMicro 2021 - 35th Symposium on Microelectronics Technology and Devicesinfo:eu-repo/semantics/openAccess2022-04-28T19:51:49Zoai:repositorio.unesp.br:11449/223619Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T15:30:07.119192Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC
title Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC
spellingShingle Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC
Leal, Joao V. C.
Gaa
Nanosheet
Quantum effect
Subthreshold swing
Temperature
Threshold voltage
title_short Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC
title_full Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC
title_fullStr Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC
title_full_unstemmed Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC
title_sort Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC
author Leal, Joao V. C.
author_facet Leal, Joao V. C.
Agopian, Paula G. D. [UNESP]
Martino, Joao A.
author_role author
author2 Agopian, Paula G. D. [UNESP]
Martino, Joao A.
author2_role author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (UNESP)
dc.contributor.author.fl_str_mv Leal, Joao V. C.
Agopian, Paula G. D. [UNESP]
Martino, Joao A.
dc.subject.por.fl_str_mv Gaa
Nanosheet
Quantum effect
Subthreshold swing
Temperature
Threshold voltage
topic Gaa
Nanosheet
Quantum effect
Subthreshold swing
Temperature
Threshold voltage
description The quantum effect on the Gate-All-Around Nanosheet (GAA NS) NMOS devices are studied in this paper from 200oC down to -100oC. The experimental results for different channel lengths (down to 28 nm) are used from 200oC to room temperature and the behavior down to -100oC is extrapolated using calibrated TCAD simulation. The quantum confinement is present in all devices, but only for the height h = 5nm case its contribution for the threshold voltage increase is more relevant. This increment is constant with the temperature, but it becomes proportionally more important for higher temperatures due to the VT decrease in such conditions. The subthreshold swing is not affected by the quantum model and its value is close to (kT/q)ln(10) in all cases, with the best results obtained for the lowest device height.
publishDate 2021
dc.date.none.fl_str_mv 2021-01-01
2022-04-28T19:51:49Z
2022-04-28T19:51:49Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/SBMicro50945.2021.9585738
SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices.
http://hdl.handle.net/11449/223619
10.1109/SBMicro50945.2021.9585738
2-s2.0-85126138208
url http://dx.doi.org/10.1109/SBMicro50945.2021.9585738
http://hdl.handle.net/11449/223619
identifier_str_mv SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices.
10.1109/SBMicro50945.2021.9585738
2-s2.0-85126138208
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128521319481344

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