Facile preparation of CuWO4 porous films and their photoelectrochemical properties

Detalhes bibliográficos
Autor(a) principal: Lima, A. E. B.
Data de Publicação: 2017
Outros Autores: Costa, M. J. S., Santos, R. S., Batista, N. C., Cavalcante, L. S., Longo, E. [UNESP], Luz, G. E.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1016/j.electacta.2017.10.010
http://hdl.handle.net/11449/165859
Resumo: In this study, the structure and photoelectrochemical properties of CuWO4 porous films synthesized by a co-precipitation method followed by a hydrothermal treatment were investigated. The film was deposited on fluorine-doped tin oxide (FTO)-conducting glass, from a suspension containing polyethylene glycol, and heat-treated at 500 degrees C for 30 min. X-ray diffraction patterns, the Rietveld refinement data, and the micro-Raman spectrum showed that the CuWO4 film has a triclinic structure. The optical band gap energy of the film was estimated to be 2.45 eV by the Tauc plot. Field emission scanning electron microcopy images of the films indicated that they are about 4.0 +/- 0.5 mm thick. The photoelectrochemical properties of the film were investigated in a Na2SO4 aqueous solution, in the absence of light and under polychromatic irradiation. The CuWO4 film exhibited photoelectrochemical behavior of a n-type semiconductor, with a negative photopotential and an anodic photocurrent density of 68 mu mA cm(-2) at 0.73 V vs. Ag/AgCl (1.23 V vs. RHE). The n-type photoelectrochemical behavior was confirmed by a chronoamperometry measurement biased condition at + 0.7 V, at different pH values. From these studies, it was noted that when the pH values increased from 3 to 11, the photocurrent density increased about 9 times. Also, the flat band potential (E-fb) of the semiconductor was estimated by the Butler-Gartner model at + 0.34 V, which was utilized to calculate the conduction band edge. The studies presented here reveal that the CuWO4 porous film is a promising candidate to be applied as a photoanode in photocatalytic processes under irradiation by visible light. (C) 2017 Elsevier Ltd. All rights reserved.
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spelling Facile preparation of CuWO4 porous films and their photoelectrochemical propertiesCo-precipitation-hydrothermalCuWO4 porous film photoelectrochemicalDoctor bladeIn this study, the structure and photoelectrochemical properties of CuWO4 porous films synthesized by a co-precipitation method followed by a hydrothermal treatment were investigated. The film was deposited on fluorine-doped tin oxide (FTO)-conducting glass, from a suspension containing polyethylene glycol, and heat-treated at 500 degrees C for 30 min. X-ray diffraction patterns, the Rietveld refinement data, and the micro-Raman spectrum showed that the CuWO4 film has a triclinic structure. The optical band gap energy of the film was estimated to be 2.45 eV by the Tauc plot. Field emission scanning electron microcopy images of the films indicated that they are about 4.0 +/- 0.5 mm thick. The photoelectrochemical properties of the film were investigated in a Na2SO4 aqueous solution, in the absence of light and under polychromatic irradiation. The CuWO4 film exhibited photoelectrochemical behavior of a n-type semiconductor, with a negative photopotential and an anodic photocurrent density of 68 mu mA cm(-2) at 0.73 V vs. Ag/AgCl (1.23 V vs. RHE). The n-type photoelectrochemical behavior was confirmed by a chronoamperometry measurement biased condition at + 0.7 V, at different pH values. From these studies, it was noted that when the pH values increased from 3 to 11, the photocurrent density increased about 9 times. Also, the flat band potential (E-fb) of the semiconductor was estimated by the Butler-Gartner model at + 0.34 V, which was utilized to calculate the conduction band edge. The studies presented here reveal that the CuWO4 porous film is a promising candidate to be applied as a photoanode in photocatalytic processes under irradiation by visible light. (C) 2017 Elsevier Ltd. All rights reserved.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)FINEPCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Univ Fed Piaui UFPI, DQ, BR-64049550 Teresina, PI, BrazilUniv Estadual Piaui, DQ, GERATEC, PPGQ, Rua Joao Cabral,2231,POB 381, BR-64002150 Teresina, PI, BrazilUniv Estadual Paulista, CDMF, POB 355, BR-14801907 Araraquara, SP, BrazilUniv Estadual Paulista, CDMF, POB 355, BR-14801907 Araraquara, SP, BrazilCNPq: 455864/2014-4CNPq: 307559/2015-7FINEP: 0315/08Elsevier B.V.Univ Fed Piaui UFPIUniv Estadual PiauiUniversidade Estadual Paulista (Unesp)Lima, A. E. B.Costa, M. J. S.Santos, R. S.Batista, N. C.Cavalcante, L. S.Longo, E. [UNESP]Luz, G. E.2018-11-29T01:20:53Z2018-11-29T01:20:53Z2017-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article139-145application/pdfhttp://dx.doi.org/10.1016/j.electacta.2017.10.010Electrochimica Acta. Oxford: Pergamon-elsevier Science Ltd, v. 256, p. 139-145, 2017.0013-4686http://hdl.handle.net/11449/16585910.1016/j.electacta.2017.10.010WOS:000414042900016WOS000414042900016.pdfWeb of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengElectrochimica Acta1,439info:eu-repo/semantics/openAccess2023-12-21T06:18:11Zoai:repositorio.unesp.br:11449/165859Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T20:51:25.419987Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Facile preparation of CuWO4 porous films and their photoelectrochemical properties
title Facile preparation of CuWO4 porous films and their photoelectrochemical properties
spellingShingle Facile preparation of CuWO4 porous films and their photoelectrochemical properties
Lima, A. E. B.
Co-precipitation-hydrothermal
CuWO4 porous film photoelectrochemical
Doctor blade
title_short Facile preparation of CuWO4 porous films and their photoelectrochemical properties
title_full Facile preparation of CuWO4 porous films and their photoelectrochemical properties
title_fullStr Facile preparation of CuWO4 porous films and their photoelectrochemical properties
title_full_unstemmed Facile preparation of CuWO4 porous films and their photoelectrochemical properties
title_sort Facile preparation of CuWO4 porous films and their photoelectrochemical properties
author Lima, A. E. B.
author_facet Lima, A. E. B.
Costa, M. J. S.
Santos, R. S.
Batista, N. C.
Cavalcante, L. S.
Longo, E. [UNESP]
Luz, G. E.
author_role author
author2 Costa, M. J. S.
Santos, R. S.
Batista, N. C.
Cavalcante, L. S.
Longo, E. [UNESP]
Luz, G. E.
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Univ Fed Piaui UFPI
Univ Estadual Piaui
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Lima, A. E. B.
Costa, M. J. S.
Santos, R. S.
Batista, N. C.
Cavalcante, L. S.
Longo, E. [UNESP]
Luz, G. E.
dc.subject.por.fl_str_mv Co-precipitation-hydrothermal
CuWO4 porous film photoelectrochemical
Doctor blade
topic Co-precipitation-hydrothermal
CuWO4 porous film photoelectrochemical
Doctor blade
description In this study, the structure and photoelectrochemical properties of CuWO4 porous films synthesized by a co-precipitation method followed by a hydrothermal treatment were investigated. The film was deposited on fluorine-doped tin oxide (FTO)-conducting glass, from a suspension containing polyethylene glycol, and heat-treated at 500 degrees C for 30 min. X-ray diffraction patterns, the Rietveld refinement data, and the micro-Raman spectrum showed that the CuWO4 film has a triclinic structure. The optical band gap energy of the film was estimated to be 2.45 eV by the Tauc plot. Field emission scanning electron microcopy images of the films indicated that they are about 4.0 +/- 0.5 mm thick. The photoelectrochemical properties of the film were investigated in a Na2SO4 aqueous solution, in the absence of light and under polychromatic irradiation. The CuWO4 film exhibited photoelectrochemical behavior of a n-type semiconductor, with a negative photopotential and an anodic photocurrent density of 68 mu mA cm(-2) at 0.73 V vs. Ag/AgCl (1.23 V vs. RHE). The n-type photoelectrochemical behavior was confirmed by a chronoamperometry measurement biased condition at + 0.7 V, at different pH values. From these studies, it was noted that when the pH values increased from 3 to 11, the photocurrent density increased about 9 times. Also, the flat band potential (E-fb) of the semiconductor was estimated by the Butler-Gartner model at + 0.34 V, which was utilized to calculate the conduction band edge. The studies presented here reveal that the CuWO4 porous film is a promising candidate to be applied as a photoanode in photocatalytic processes under irradiation by visible light. (C) 2017 Elsevier Ltd. All rights reserved.
publishDate 2017
dc.date.none.fl_str_mv 2017-12-01
2018-11-29T01:20:53Z
2018-11-29T01:20:53Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/j.electacta.2017.10.010
Electrochimica Acta. Oxford: Pergamon-elsevier Science Ltd, v. 256, p. 139-145, 2017.
0013-4686
http://hdl.handle.net/11449/165859
10.1016/j.electacta.2017.10.010
WOS:000414042900016
WOS000414042900016.pdf
url http://dx.doi.org/10.1016/j.electacta.2017.10.010
http://hdl.handle.net/11449/165859
identifier_str_mv Electrochimica Acta. Oxford: Pergamon-elsevier Science Ltd, v. 256, p. 139-145, 2017.
0013-4686
10.1016/j.electacta.2017.10.010
WOS:000414042900016
WOS000414042900016.pdf
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Electrochimica Acta
1,439
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 139-145
application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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