Facile preparation of CuWO4 porous films and their photoelectrochemical properties
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.electacta.2017.10.010 http://hdl.handle.net/11449/165859 |
Resumo: | In this study, the structure and photoelectrochemical properties of CuWO4 porous films synthesized by a co-precipitation method followed by a hydrothermal treatment were investigated. The film was deposited on fluorine-doped tin oxide (FTO)-conducting glass, from a suspension containing polyethylene glycol, and heat-treated at 500 degrees C for 30 min. X-ray diffraction patterns, the Rietveld refinement data, and the micro-Raman spectrum showed that the CuWO4 film has a triclinic structure. The optical band gap energy of the film was estimated to be 2.45 eV by the Tauc plot. Field emission scanning electron microcopy images of the films indicated that they are about 4.0 +/- 0.5 mm thick. The photoelectrochemical properties of the film were investigated in a Na2SO4 aqueous solution, in the absence of light and under polychromatic irradiation. The CuWO4 film exhibited photoelectrochemical behavior of a n-type semiconductor, with a negative photopotential and an anodic photocurrent density of 68 mu mA cm(-2) at 0.73 V vs. Ag/AgCl (1.23 V vs. RHE). The n-type photoelectrochemical behavior was confirmed by a chronoamperometry measurement biased condition at + 0.7 V, at different pH values. From these studies, it was noted that when the pH values increased from 3 to 11, the photocurrent density increased about 9 times. Also, the flat band potential (E-fb) of the semiconductor was estimated by the Butler-Gartner model at + 0.34 V, which was utilized to calculate the conduction band edge. The studies presented here reveal that the CuWO4 porous film is a promising candidate to be applied as a photoanode in photocatalytic processes under irradiation by visible light. (C) 2017 Elsevier Ltd. All rights reserved. |
id |
UNSP_c6cbfb2054a8aa0540fff1da44e45aae |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/165859 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Facile preparation of CuWO4 porous films and their photoelectrochemical propertiesCo-precipitation-hydrothermalCuWO4 porous film photoelectrochemicalDoctor bladeIn this study, the structure and photoelectrochemical properties of CuWO4 porous films synthesized by a co-precipitation method followed by a hydrothermal treatment were investigated. The film was deposited on fluorine-doped tin oxide (FTO)-conducting glass, from a suspension containing polyethylene glycol, and heat-treated at 500 degrees C for 30 min. X-ray diffraction patterns, the Rietveld refinement data, and the micro-Raman spectrum showed that the CuWO4 film has a triclinic structure. The optical band gap energy of the film was estimated to be 2.45 eV by the Tauc plot. Field emission scanning electron microcopy images of the films indicated that they are about 4.0 +/- 0.5 mm thick. The photoelectrochemical properties of the film were investigated in a Na2SO4 aqueous solution, in the absence of light and under polychromatic irradiation. The CuWO4 film exhibited photoelectrochemical behavior of a n-type semiconductor, with a negative photopotential and an anodic photocurrent density of 68 mu mA cm(-2) at 0.73 V vs. Ag/AgCl (1.23 V vs. RHE). The n-type photoelectrochemical behavior was confirmed by a chronoamperometry measurement biased condition at + 0.7 V, at different pH values. From these studies, it was noted that when the pH values increased from 3 to 11, the photocurrent density increased about 9 times. Also, the flat band potential (E-fb) of the semiconductor was estimated by the Butler-Gartner model at + 0.34 V, which was utilized to calculate the conduction band edge. The studies presented here reveal that the CuWO4 porous film is a promising candidate to be applied as a photoanode in photocatalytic processes under irradiation by visible light. (C) 2017 Elsevier Ltd. All rights reserved.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)FINEPCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Univ Fed Piaui UFPI, DQ, BR-64049550 Teresina, PI, BrazilUniv Estadual Piaui, DQ, GERATEC, PPGQ, Rua Joao Cabral,2231,POB 381, BR-64002150 Teresina, PI, BrazilUniv Estadual Paulista, CDMF, POB 355, BR-14801907 Araraquara, SP, BrazilUniv Estadual Paulista, CDMF, POB 355, BR-14801907 Araraquara, SP, BrazilCNPq: 455864/2014-4CNPq: 307559/2015-7FINEP: 0315/08Elsevier B.V.Univ Fed Piaui UFPIUniv Estadual PiauiUniversidade Estadual Paulista (Unesp)Lima, A. E. B.Costa, M. J. S.Santos, R. S.Batista, N. C.Cavalcante, L. S.Longo, E. [UNESP]Luz, G. E.2018-11-29T01:20:53Z2018-11-29T01:20:53Z2017-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article139-145application/pdfhttp://dx.doi.org/10.1016/j.electacta.2017.10.010Electrochimica Acta. Oxford: Pergamon-elsevier Science Ltd, v. 256, p. 139-145, 2017.0013-4686http://hdl.handle.net/11449/16585910.1016/j.electacta.2017.10.010WOS:000414042900016WOS000414042900016.pdfWeb of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengElectrochimica Acta1,439info:eu-repo/semantics/openAccess2023-12-21T06:18:11Zoai:repositorio.unesp.br:11449/165859Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T20:51:25.419987Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Facile preparation of CuWO4 porous films and their photoelectrochemical properties |
title |
Facile preparation of CuWO4 porous films and their photoelectrochemical properties |
spellingShingle |
Facile preparation of CuWO4 porous films and their photoelectrochemical properties Lima, A. E. B. Co-precipitation-hydrothermal CuWO4 porous film photoelectrochemical Doctor blade |
title_short |
Facile preparation of CuWO4 porous films and their photoelectrochemical properties |
title_full |
Facile preparation of CuWO4 porous films and their photoelectrochemical properties |
title_fullStr |
Facile preparation of CuWO4 porous films and their photoelectrochemical properties |
title_full_unstemmed |
Facile preparation of CuWO4 porous films and their photoelectrochemical properties |
title_sort |
Facile preparation of CuWO4 porous films and their photoelectrochemical properties |
author |
Lima, A. E. B. |
author_facet |
Lima, A. E. B. Costa, M. J. S. Santos, R. S. Batista, N. C. Cavalcante, L. S. Longo, E. [UNESP] Luz, G. E. |
author_role |
author |
author2 |
Costa, M. J. S. Santos, R. S. Batista, N. C. Cavalcante, L. S. Longo, E. [UNESP] Luz, G. E. |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Univ Fed Piaui UFPI Univ Estadual Piaui Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Lima, A. E. B. Costa, M. J. S. Santos, R. S. Batista, N. C. Cavalcante, L. S. Longo, E. [UNESP] Luz, G. E. |
dc.subject.por.fl_str_mv |
Co-precipitation-hydrothermal CuWO4 porous film photoelectrochemical Doctor blade |
topic |
Co-precipitation-hydrothermal CuWO4 porous film photoelectrochemical Doctor blade |
description |
In this study, the structure and photoelectrochemical properties of CuWO4 porous films synthesized by a co-precipitation method followed by a hydrothermal treatment were investigated. The film was deposited on fluorine-doped tin oxide (FTO)-conducting glass, from a suspension containing polyethylene glycol, and heat-treated at 500 degrees C for 30 min. X-ray diffraction patterns, the Rietveld refinement data, and the micro-Raman spectrum showed that the CuWO4 film has a triclinic structure. The optical band gap energy of the film was estimated to be 2.45 eV by the Tauc plot. Field emission scanning electron microcopy images of the films indicated that they are about 4.0 +/- 0.5 mm thick. The photoelectrochemical properties of the film were investigated in a Na2SO4 aqueous solution, in the absence of light and under polychromatic irradiation. The CuWO4 film exhibited photoelectrochemical behavior of a n-type semiconductor, with a negative photopotential and an anodic photocurrent density of 68 mu mA cm(-2) at 0.73 V vs. Ag/AgCl (1.23 V vs. RHE). The n-type photoelectrochemical behavior was confirmed by a chronoamperometry measurement biased condition at + 0.7 V, at different pH values. From these studies, it was noted that when the pH values increased from 3 to 11, the photocurrent density increased about 9 times. Also, the flat band potential (E-fb) of the semiconductor was estimated by the Butler-Gartner model at + 0.34 V, which was utilized to calculate the conduction band edge. The studies presented here reveal that the CuWO4 porous film is a promising candidate to be applied as a photoanode in photocatalytic processes under irradiation by visible light. (C) 2017 Elsevier Ltd. All rights reserved. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-12-01 2018-11-29T01:20:53Z 2018-11-29T01:20:53Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.electacta.2017.10.010 Electrochimica Acta. Oxford: Pergamon-elsevier Science Ltd, v. 256, p. 139-145, 2017. 0013-4686 http://hdl.handle.net/11449/165859 10.1016/j.electacta.2017.10.010 WOS:000414042900016 WOS000414042900016.pdf |
url |
http://dx.doi.org/10.1016/j.electacta.2017.10.010 http://hdl.handle.net/11449/165859 |
identifier_str_mv |
Electrochimica Acta. Oxford: Pergamon-elsevier Science Ltd, v. 256, p. 139-145, 2017. 0013-4686 10.1016/j.electacta.2017.10.010 WOS:000414042900016 WOS000414042900016.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Electrochimica Acta 1,439 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
139-145 application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier B.V. |
publisher.none.fl_str_mv |
Elsevier B.V. |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129258427514880 |