A semiconductor strain gage tactile transducer

Detalhes bibliográficos
Autor(a) principal: Obana, F. Y.
Data de Publicação: 2001
Outros Autores: Carvalho, A. A., Gualda, R., da Silva, J. G.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/IMTC.2001.928854
http://hdl.handle.net/11449/37978
Resumo: This paper describes the development of a semiconductor strain gage tactile transducer. It was designed with the goal of measuring finger forces without affecting the hand dexterity. The transducer structure was manufactured with stainless steel and has small dimensions ( 4 min diameter and I min thickness). It is light and suitable to connect to the finger pads. It has a device that prevents its damage when forces are applied. The semiconductor strain gage was used over due its small size and high sensitivity, although it has high temperature sensitivity. Theory, design and construction details are presented the signal conditioning circuit is very simple because the semiconductor strain gage sensitivity is high. It presents linear response from 0 to 100 N, 0.5 N resolution, fall time of 7.2 ms, good repeatability, and small hysteresis. The semiconductor strain gage transducer has characteristics that can make it very useful in Rehabilitation Engineering, Robotics, and Medicine.
id UNSP_d8bb89ef50f21cb01106daf0a90cbbbe
oai_identifier_str oai:repositorio.unesp.br:11449/37978
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling A semiconductor strain gage tactile transducersemiconductor strain gagetactile transducerforce sensorfinger forcesemiconductor sensorThis paper describes the development of a semiconductor strain gage tactile transducer. It was designed with the goal of measuring finger forces without affecting the hand dexterity. The transducer structure was manufactured with stainless steel and has small dimensions ( 4 min diameter and I min thickness). It is light and suitable to connect to the finger pads. It has a device that prevents its damage when forces are applied. The semiconductor strain gage was used over due its small size and high sensitivity, although it has high temperature sensitivity. Theory, design and construction details are presented the signal conditioning circuit is very simple because the semiconductor strain gage sensitivity is high. It presents linear response from 0 to 100 N, 0.5 N resolution, fall time of 7.2 ms, good repeatability, and small hysteresis. The semiconductor strain gage transducer has characteristics that can make it very useful in Rehabilitation Engineering, Robotics, and Medicine.State Univ São Paulo, Dept Elect Engn, BR-15385000 Ilha Solteira, SP, BrazilState Univ São Paulo, Dept Elect Engn, BR-15385000 Ilha Solteira, SP, BrazilInstitute of Electrical and Electronics Engineers (IEEE)Universidade Estadual Paulista (Unesp)Obana, F. Y.Carvalho, A. A.Gualda, R.da Silva, J. G.2014-05-20T15:28:05Z2014-05-20T15:28:05Z2001-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject429-432http://dx.doi.org/10.1109/IMTC.2001.928854Imtc/2001: Proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference, Vols 1-3. New York: IEEE, p. 429-432, 2001.1091-5281http://hdl.handle.net/11449/3797810.1109/IMTC.2001.928854WOS:0001725509000770250066159980825Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengImtc/2001: Proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference, Vols 1-30,198info:eu-repo/semantics/openAccess2024-07-04T19:11:55Zoai:repositorio.unesp.br:11449/37978Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T23:08:06.974899Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv A semiconductor strain gage tactile transducer
title A semiconductor strain gage tactile transducer
spellingShingle A semiconductor strain gage tactile transducer
Obana, F. Y.
semiconductor strain gage
tactile transducer
force sensor
finger force
semiconductor sensor
title_short A semiconductor strain gage tactile transducer
title_full A semiconductor strain gage tactile transducer
title_fullStr A semiconductor strain gage tactile transducer
title_full_unstemmed A semiconductor strain gage tactile transducer
title_sort A semiconductor strain gage tactile transducer
author Obana, F. Y.
author_facet Obana, F. Y.
Carvalho, A. A.
Gualda, R.
da Silva, J. G.
author_role author
author2 Carvalho, A. A.
Gualda, R.
da Silva, J. G.
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Obana, F. Y.
Carvalho, A. A.
Gualda, R.
da Silva, J. G.
dc.subject.por.fl_str_mv semiconductor strain gage
tactile transducer
force sensor
finger force
semiconductor sensor
topic semiconductor strain gage
tactile transducer
force sensor
finger force
semiconductor sensor
description This paper describes the development of a semiconductor strain gage tactile transducer. It was designed with the goal of measuring finger forces without affecting the hand dexterity. The transducer structure was manufactured with stainless steel and has small dimensions ( 4 min diameter and I min thickness). It is light and suitable to connect to the finger pads. It has a device that prevents its damage when forces are applied. The semiconductor strain gage was used over due its small size and high sensitivity, although it has high temperature sensitivity. Theory, design and construction details are presented the signal conditioning circuit is very simple because the semiconductor strain gage sensitivity is high. It presents linear response from 0 to 100 N, 0.5 N resolution, fall time of 7.2 ms, good repeatability, and small hysteresis. The semiconductor strain gage transducer has characteristics that can make it very useful in Rehabilitation Engineering, Robotics, and Medicine.
publishDate 2001
dc.date.none.fl_str_mv 2001-01-01
2014-05-20T15:28:05Z
2014-05-20T15:28:05Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/IMTC.2001.928854
Imtc/2001: Proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference, Vols 1-3. New York: IEEE, p. 429-432, 2001.
1091-5281
http://hdl.handle.net/11449/37978
10.1109/IMTC.2001.928854
WOS:000172550900077
0250066159980825
url http://dx.doi.org/10.1109/IMTC.2001.928854
http://hdl.handle.net/11449/37978
identifier_str_mv Imtc/2001: Proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference, Vols 1-3. New York: IEEE, p. 429-432, 2001.
1091-5281
10.1109/IMTC.2001.928854
WOS:000172550900077
0250066159980825
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Imtc/2001: Proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference, Vols 1-3
0,198
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 429-432
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers (IEEE)
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers (IEEE)
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129493439610880

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