La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1007/s10854-017-6851-4 http://hdl.handle.net/11449/174428 |
Resumo: | Samarium substituted lanthanum orthoferrite La0:5Sm0:5FeO3 thin film has been prepared by soft chemical method. A single perovskite phase with orthorhombic crystallographic structure was attained. Magnetic and ferroelectric orderings of the film is observed at room temperature (RT). The magnetization of the sample measured at room temperature increases non-linearly with the increase of magnetic field, which suggests the presence of dipole–dipole/exchange interaction in the sample. The resistivity measured in the temperature range 25–375 °C showed that the film is a semiconducting material with low resistivity. The Cole–Cole model reveals different grain boundaries electrical resistance caused by the equilibrium concentration of oxygen vacancies in orthoferrite and that the addition of samarium results in loss of oxygen during sintering. The ferroelectric behaviour of La0:5Sm0:5FeO3 at RT is also confirmed by its capacitance–voltage (C–V) characteristic suggesting a weak ferroelectric behaviour at room temperature. The variation of dielectric constant as a function of frequency predicts the presence of spontaneous polarization in the sample. The semiconductor electrical behavior of the La0:5Sm0:5FeO3 is mainly composed of tunneling current. |
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La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperatureSamarium substituted lanthanum orthoferrite La0:5Sm0:5FeO3 thin film has been prepared by soft chemical method. A single perovskite phase with orthorhombic crystallographic structure was attained. Magnetic and ferroelectric orderings of the film is observed at room temperature (RT). The magnetization of the sample measured at room temperature increases non-linearly with the increase of magnetic field, which suggests the presence of dipole–dipole/exchange interaction in the sample. The resistivity measured in the temperature range 25–375 °C showed that the film is a semiconducting material with low resistivity. The Cole–Cole model reveals different grain boundaries electrical resistance caused by the equilibrium concentration of oxygen vacancies in orthoferrite and that the addition of samarium results in loss of oxygen during sintering. The ferroelectric behaviour of La0:5Sm0:5FeO3 at RT is also confirmed by its capacitance–voltage (C–V) characteristic suggesting a weak ferroelectric behaviour at room temperature. The variation of dielectric constant as a function of frequency predicts the presence of spontaneous polarization in the sample. The semiconductor electrical behavior of the La0:5Sm0:5FeO3 is mainly composed of tunneling current.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Laboratório Interdisciplinar em Cerâmica (LIEC) Departamento de Físico-Química Instituto de Química UNESPFaculdade de Engenharia de Guaratinguetá Universidade Estadual Paulista- Unesp, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro PedregulhoUniversidade Estadual de Mato Grosso do Sul, Cidade Universitária, Caixa Postal 351Instituto de Investigaciones en Ciencia y Tecnología de Materiales (INTEMA) (CONICET-Universidad Nacional de Mar del Plata), Juan B. Justo 4302Laboratório Interdisciplinar em Cerâmica (LIEC) Departamento de Físico-Química Instituto de Química UNESPFaculdade de Engenharia de Guaratinguetá Universidade Estadual Paulista- Unesp, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro PedregulhoFAPESP: 2013/07296-2Universidade Estadual Paulista (Unesp)Universidade Estadual de Mato Grosso do Sul (UEMS)Instituto de Investigaciones en Ciencia y Tecnología de Materiales (INTEMA) (CONICET-Universidad Nacional de Mar del Plata)Ranieri, M. G.A. [UNESP]Cilense, M. [UNESP]Aguiar, E. C.Simões, A. Z. [UNESP]Ponce, M. A.Longo, E. [UNESP]2018-12-11T17:11:04Z2018-12-11T17:11:04Z2017-07-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10747-10757application/pdfhttp://dx.doi.org/10.1007/s10854-017-6851-4Journal of Materials Science: Materials in Electronics, v. 28, n. 14, p. 10747-10757, 2017.1573-482X0957-4522http://hdl.handle.net/11449/17442810.1007/s10854-017-6851-42-s2.0-850170984552-s2.0-85017098455.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Materials Science: Materials in Electronics0,503info:eu-repo/semantics/openAccess2023-10-07T06:04:48Zoai:repositorio.unesp.br:11449/174428Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:14:47.883629Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature |
title |
La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature |
spellingShingle |
La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature Ranieri, M. G.A. [UNESP] |
title_short |
La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature |
title_full |
La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature |
title_fullStr |
La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature |
title_full_unstemmed |
La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature |
title_sort |
La0.5Sm0.5FeO3: a new candidate for magneto-electric coupling at room temperature |
author |
Ranieri, M. G.A. [UNESP] |
author_facet |
Ranieri, M. G.A. [UNESP] Cilense, M. [UNESP] Aguiar, E. C. Simões, A. Z. [UNESP] Ponce, M. A. Longo, E. [UNESP] |
author_role |
author |
author2 |
Cilense, M. [UNESP] Aguiar, E. C. Simões, A. Z. [UNESP] Ponce, M. A. Longo, E. [UNESP] |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Universidade Estadual de Mato Grosso do Sul (UEMS) Instituto de Investigaciones en Ciencia y Tecnología de Materiales (INTEMA) (CONICET-Universidad Nacional de Mar del Plata) |
dc.contributor.author.fl_str_mv |
Ranieri, M. G.A. [UNESP] Cilense, M. [UNESP] Aguiar, E. C. Simões, A. Z. [UNESP] Ponce, M. A. Longo, E. [UNESP] |
description |
Samarium substituted lanthanum orthoferrite La0:5Sm0:5FeO3 thin film has been prepared by soft chemical method. A single perovskite phase with orthorhombic crystallographic structure was attained. Magnetic and ferroelectric orderings of the film is observed at room temperature (RT). The magnetization of the sample measured at room temperature increases non-linearly with the increase of magnetic field, which suggests the presence of dipole–dipole/exchange interaction in the sample. The resistivity measured in the temperature range 25–375 °C showed that the film is a semiconducting material with low resistivity. The Cole–Cole model reveals different grain boundaries electrical resistance caused by the equilibrium concentration of oxygen vacancies in orthoferrite and that the addition of samarium results in loss of oxygen during sintering. The ferroelectric behaviour of La0:5Sm0:5FeO3 at RT is also confirmed by its capacitance–voltage (C–V) characteristic suggesting a weak ferroelectric behaviour at room temperature. The variation of dielectric constant as a function of frequency predicts the presence of spontaneous polarization in the sample. The semiconductor electrical behavior of the La0:5Sm0:5FeO3 is mainly composed of tunneling current. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-07-01 2018-12-11T17:11:04Z 2018-12-11T17:11:04Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1007/s10854-017-6851-4 Journal of Materials Science: Materials in Electronics, v. 28, n. 14, p. 10747-10757, 2017. 1573-482X 0957-4522 http://hdl.handle.net/11449/174428 10.1007/s10854-017-6851-4 2-s2.0-85017098455 2-s2.0-85017098455.pdf |
url |
http://dx.doi.org/10.1007/s10854-017-6851-4 http://hdl.handle.net/11449/174428 |
identifier_str_mv |
Journal of Materials Science: Materials in Electronics, v. 28, n. 14, p. 10747-10757, 2017. 1573-482X 0957-4522 10.1007/s10854-017-6851-4 2-s2.0-85017098455 2-s2.0-85017098455.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Materials Science: Materials in Electronics 0,503 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
10747-10757 application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
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1808128335269593088 |