Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://hdl.handle.net/11449/162307 |
Resumo: | Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above T-m similar to 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant tau increases from 404 to 977 ms as the magnitude voltage increases. |
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Nanoscale polarization relaxation and piezoelectric properties of SBN thin filmsSBN filmspiezoresponsepolarization relaxationRandomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above T-m similar to 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant tau increases from 404 to 977 ms as the magnitude voltage increases.Sao Paulo State Univ UNESP, Dept Chem & Phys, Ilha Solteira, BrazilUniv Aveiro, Dept Phys, Aveiro, PortugalUniv Aveiro, CICECO, Aveiro, PortugalUral Fed Univ, Inst Nat Sci, Ekaterinburg, RussiaSao Paulo State Univ UNESP, Dept Chem & Phys, Ilha Solteira, BrazilIeeeUniversidade Estadual Paulista (Unesp)Univ AveiroUral Fed UnivMelo, M. [UNESP]Araujo, E. B. [UNESP]Ivanov, M.Shur, V. Ya.Kholkin, A. L.IEEE2018-11-26T17:15:33Z2018-11-26T17:15:33Z2016-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject42016 Joint Ieee International Symposium On The Applications Of Ferroelectrics, European Conference On Application Of Polar Dielectrics, And Piezoelectric Force Microscopy Workshop (isaf/ecapd/pfm). New York: Ieee, 4 p., 2016.http://hdl.handle.net/11449/162307WOS:000391250700024Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2016 Joint Ieee International Symposium On The Applications Of Ferroelectrics, European Conference On Application Of Polar Dielectrics, And Piezoelectric Force Microscopy Workshop (isaf/ecapd/pfm)info:eu-repo/semantics/openAccess2021-10-23T21:47:02Zoai:repositorio.unesp.br:11449/162307Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T21:47:02Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
title |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
spellingShingle |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films Melo, M. [UNESP] SBN films piezoresponse polarization relaxation |
title_short |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
title_full |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
title_fullStr |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
title_full_unstemmed |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
title_sort |
Nanoscale polarization relaxation and piezoelectric properties of SBN thin films |
author |
Melo, M. [UNESP] |
author_facet |
Melo, M. [UNESP] Araujo, E. B. [UNESP] Ivanov, M. Shur, V. Ya. Kholkin, A. L. IEEE |
author_role |
author |
author2 |
Araujo, E. B. [UNESP] Ivanov, M. Shur, V. Ya. Kholkin, A. L. IEEE |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Univ Aveiro Ural Fed Univ |
dc.contributor.author.fl_str_mv |
Melo, M. [UNESP] Araujo, E. B. [UNESP] Ivanov, M. Shur, V. Ya. Kholkin, A. L. IEEE |
dc.subject.por.fl_str_mv |
SBN films piezoresponse polarization relaxation |
topic |
SBN films piezoresponse polarization relaxation |
description |
Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above T-m similar to 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant tau increases from 404 to 977 ms as the magnitude voltage increases. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-01-01 2018-11-26T17:15:33Z 2018-11-26T17:15:33Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
2016 Joint Ieee International Symposium On The Applications Of Ferroelectrics, European Conference On Application Of Polar Dielectrics, And Piezoelectric Force Microscopy Workshop (isaf/ecapd/pfm). New York: Ieee, 4 p., 2016. http://hdl.handle.net/11449/162307 WOS:000391250700024 |
identifier_str_mv |
2016 Joint Ieee International Symposium On The Applications Of Ferroelectrics, European Conference On Application Of Polar Dielectrics, And Piezoelectric Force Microscopy Workshop (isaf/ecapd/pfm). New York: Ieee, 4 p., 2016. WOS:000391250700024 |
url |
http://hdl.handle.net/11449/162307 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2016 Joint Ieee International Symposium On The Applications Of Ferroelectrics, European Conference On Application Of Polar Dielectrics, And Piezoelectric Force Microscopy Workshop (isaf/ecapd/pfm) |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
4 |
dc.publisher.none.fl_str_mv |
Ieee |
publisher.none.fl_str_mv |
Ieee |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
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1799965717522546688 |