Nanoscale polarization relaxation and piezoelectric properties of SBN thin films

Detalhes bibliográficos
Autor(a) principal: Melo, M. [UNESP]
Data de Publicação: 2016
Outros Autores: Araujo, E. B. [UNESP], Ivanov, M., Shur, V. Ya., Kholkin, A. L., IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/162307
Resumo: Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above T-m similar to 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant tau increases from 404 to 977 ms as the magnitude voltage increases.
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spelling Nanoscale polarization relaxation and piezoelectric properties of SBN thin filmsSBN filmspiezoresponsepolarization relaxationRandomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above T-m similar to 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant tau increases from 404 to 977 ms as the magnitude voltage increases.Sao Paulo State Univ UNESP, Dept Chem & Phys, Ilha Solteira, BrazilUniv Aveiro, Dept Phys, Aveiro, PortugalUniv Aveiro, CICECO, Aveiro, PortugalUral Fed Univ, Inst Nat Sci, Ekaterinburg, RussiaSao Paulo State Univ UNESP, Dept Chem & Phys, Ilha Solteira, BrazilIeeeUniversidade Estadual Paulista (Unesp)Univ AveiroUral Fed UnivMelo, M. [UNESP]Araujo, E. B. [UNESP]Ivanov, M.Shur, V. Ya.Kholkin, A. L.IEEE2018-11-26T17:15:33Z2018-11-26T17:15:33Z2016-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject42016 Joint Ieee International Symposium On The Applications Of Ferroelectrics, European Conference On Application Of Polar Dielectrics, And Piezoelectric Force Microscopy Workshop (isaf/ecapd/pfm). New York: Ieee, 4 p., 2016.http://hdl.handle.net/11449/162307WOS:000391250700024Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2016 Joint Ieee International Symposium On The Applications Of Ferroelectrics, European Conference On Application Of Polar Dielectrics, And Piezoelectric Force Microscopy Workshop (isaf/ecapd/pfm)info:eu-repo/semantics/openAccess2021-10-23T21:47:02Zoai:repositorio.unesp.br:11449/162307Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T21:47:02Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
title Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
spellingShingle Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
Melo, M. [UNESP]
SBN films
piezoresponse
polarization relaxation
title_short Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
title_full Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
title_fullStr Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
title_full_unstemmed Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
title_sort Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
author Melo, M. [UNESP]
author_facet Melo, M. [UNESP]
Araujo, E. B. [UNESP]
Ivanov, M.
Shur, V. Ya.
Kholkin, A. L.
IEEE
author_role author
author2 Araujo, E. B. [UNESP]
Ivanov, M.
Shur, V. Ya.
Kholkin, A. L.
IEEE
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Univ Aveiro
Ural Fed Univ
dc.contributor.author.fl_str_mv Melo, M. [UNESP]
Araujo, E. B. [UNESP]
Ivanov, M.
Shur, V. Ya.
Kholkin, A. L.
IEEE
dc.subject.por.fl_str_mv SBN films
piezoresponse
polarization relaxation
topic SBN films
piezoresponse
polarization relaxation
description Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above T-m similar to 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant tau increases from 404 to 977 ms as the magnitude voltage increases.
publishDate 2016
dc.date.none.fl_str_mv 2016-01-01
2018-11-26T17:15:33Z
2018-11-26T17:15:33Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2016 Joint Ieee International Symposium On The Applications Of Ferroelectrics, European Conference On Application Of Polar Dielectrics, And Piezoelectric Force Microscopy Workshop (isaf/ecapd/pfm). New York: Ieee, 4 p., 2016.
http://hdl.handle.net/11449/162307
WOS:000391250700024
identifier_str_mv 2016 Joint Ieee International Symposium On The Applications Of Ferroelectrics, European Conference On Application Of Polar Dielectrics, And Piezoelectric Force Microscopy Workshop (isaf/ecapd/pfm). New York: Ieee, 4 p., 2016.
WOS:000391250700024
url http://hdl.handle.net/11449/162307
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2016 Joint Ieee International Symposium On The Applications Of Ferroelectrics, European Conference On Application Of Polar Dielectrics, And Piezoelectric Force Microscopy Workshop (isaf/ecapd/pfm)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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