Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering

Detalhes bibliográficos
Autor(a) principal: Cerqueira, M. F.
Data de Publicação: 2001
Outros Autores: Stepikhova, M., Ferreira, J. A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/14173
Resumo: Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.
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spelling Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputteringPhotoluminescenceErbiumNanocrystalline siliconScience & TechnologyMicrocrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.ElsevierUniversidade do MinhoCerqueira, M. F.Stepikhova, M.Ferreira, J. A.20012001-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/14173eng0921-510710.1016/S0921-5107(00)00684-Xhttp://www.sciencedirect.com/science/article/pii/S092151070000684Xinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:02:07ZPortal AgregadorONG
dc.title.none.fl_str_mv Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
title Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
spellingShingle Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
Cerqueira, M. F.
Photoluminescence
Erbium
Nanocrystalline silicon
Science & Technology
title_short Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
title_full Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
title_fullStr Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
title_full_unstemmed Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
title_sort Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
author Cerqueira, M. F.
author_facet Cerqueira, M. F.
Stepikhova, M.
Ferreira, J. A.
author_role author
author2 Stepikhova, M.
Ferreira, J. A.
author2_role author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Cerqueira, M. F.
Stepikhova, M.
Ferreira, J. A.
dc.subject.por.fl_str_mv Photoluminescence
Erbium
Nanocrystalline silicon
Science & Technology
topic Photoluminescence
Erbium
Nanocrystalline silicon
Science & Technology
description Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.
publishDate 2001
dc.date.none.fl_str_mv 2001
2001-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/14173
url http://hdl.handle.net/1822/14173
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0921-5107
10.1016/S0921-5107(00)00684-X
http://www.sciencedirect.com/science/article/pii/S092151070000684X
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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