Effect of thermal treatment on points defects of Al-N codoped ZnO films
Main Author: | |
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Publication Date: | 2018 |
Other Authors: | , , , , , , , |
Format: | Article |
Language: | eng |
Source: | Matéria (Rio de Janeiro. Online) |
Download full: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762018000200529 |
Summary: | ABSTRACT The effect of annealing temperature on the structural properties of Al-N codoped ZnO films were studied by X-ray diffraction, photoluminescence and Raman spectroscopy. ZnO films were deposited by sputtering technique on silicon substrates at 20 ºC, Al-concentration was kept constant and N-flow was changed to 6, 12 and 15 sccm. A thermal treatment was performed by annealing the sample during 30 minutes at 300, 400, 500, 600 and 700 °C. Before annealing, Raman spectra shows two vibration modes located at 275 and 580 cm-1 associated to the nitrogen incorporation and the presence of point defects. Both Raman intensities of modes I275 and I580 decreases when the nitrogen flow increases from 6 to 12 and 15 sccm, which is originated by a decreasing interstitial defects density. The improving of the crystal quality was confirmed by x-ray diffraction and room temperature photoluminescence measurements. After annealing, in the Raman spectra it was observed that I275 increases as the temperature increase, reaches a maximum intensity between 500 and 600 °C, and decreases for higher temperatures. X-ray diffraction measurements show that after annealing the compressive stress decrease progressively as the annealing temperature increase. This study suggests that 275 Raman mode could be used to estimate the optimal thermal treatment in order to achieve p-doping ZnO. |
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Effect of thermal treatment on points defects of Al-N codoped ZnO filmsZinc oxidecodopingannealingRaman spectroscopyXRDABSTRACT The effect of annealing temperature on the structural properties of Al-N codoped ZnO films were studied by X-ray diffraction, photoluminescence and Raman spectroscopy. ZnO films were deposited by sputtering technique on silicon substrates at 20 ºC, Al-concentration was kept constant and N-flow was changed to 6, 12 and 15 sccm. A thermal treatment was performed by annealing the sample during 30 minutes at 300, 400, 500, 600 and 700 °C. Before annealing, Raman spectra shows two vibration modes located at 275 and 580 cm-1 associated to the nitrogen incorporation and the presence of point defects. Both Raman intensities of modes I275 and I580 decreases when the nitrogen flow increases from 6 to 12 and 15 sccm, which is originated by a decreasing interstitial defects density. The improving of the crystal quality was confirmed by x-ray diffraction and room temperature photoluminescence measurements. After annealing, in the Raman spectra it was observed that I275 increases as the temperature increase, reaches a maximum intensity between 500 and 600 °C, and decreases for higher temperatures. X-ray diffraction measurements show that after annealing the compressive stress decrease progressively as the annealing temperature increase. This study suggests that 275 Raman mode could be used to estimate the optimal thermal treatment in order to achieve p-doping ZnO.Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiroem cooperação com a Associação Brasileira do Hidrogênio, ABH22018-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762018000200529Matéria (Rio de Janeiro) v.23 n.2 2018reponame:Matéria (Rio de Janeiro. Online)instname:Matéria (Rio de Janeiro. Online)instacron:RLAM10.1590/s1517-707620180002.0454info:eu-repo/semantics/openAccessPeredo,Luis ZamoraVelis,Isaac MartínezMartínez,AntonioTorres,Julián HernándezGonzález,Leandro GarcíaLvova,Lada DomratchevaRamírez,Nelly FloresGarcía,Salomón VásquezRodríguez,Guillermo Santanaeng2018-07-16T00:00:00Zoai:scielo:S1517-70762018000200529Revistahttp://www.materia.coppe.ufrj.br/https://old.scielo.br/oai/scielo-oai.php||materia@labh2.coppe.ufrj.br1517-70761517-7076opendoar:2018-07-16T00:00Matéria (Rio de Janeiro. Online) - Matéria (Rio de Janeiro. Online)false |
dc.title.none.fl_str_mv |
Effect of thermal treatment on points defects of Al-N codoped ZnO films |
title |
Effect of thermal treatment on points defects of Al-N codoped ZnO films |
spellingShingle |
Effect of thermal treatment on points defects of Al-N codoped ZnO films Peredo,Luis Zamora Zinc oxide codoping annealing Raman spectroscopy XRD |
title_short |
Effect of thermal treatment on points defects of Al-N codoped ZnO films |
title_full |
Effect of thermal treatment on points defects of Al-N codoped ZnO films |
title_fullStr |
Effect of thermal treatment on points defects of Al-N codoped ZnO films |
title_full_unstemmed |
Effect of thermal treatment on points defects of Al-N codoped ZnO films |
title_sort |
Effect of thermal treatment on points defects of Al-N codoped ZnO films |
author |
Peredo,Luis Zamora |
author_facet |
Peredo,Luis Zamora Velis,Isaac Martínez Martínez,Antonio Torres,Julián Hernández González,Leandro García Lvova,Lada Domratcheva Ramírez,Nelly Flores García,Salomón Vásquez Rodríguez,Guillermo Santana |
author_role |
author |
author2 |
Velis,Isaac Martínez Martínez,Antonio Torres,Julián Hernández González,Leandro García Lvova,Lada Domratcheva Ramírez,Nelly Flores García,Salomón Vásquez Rodríguez,Guillermo Santana |
author2_role |
author author author author author author author author |
dc.contributor.author.fl_str_mv |
Peredo,Luis Zamora Velis,Isaac Martínez Martínez,Antonio Torres,Julián Hernández González,Leandro García Lvova,Lada Domratcheva Ramírez,Nelly Flores García,Salomón Vásquez Rodríguez,Guillermo Santana |
dc.subject.por.fl_str_mv |
Zinc oxide codoping annealing Raman spectroscopy XRD |
topic |
Zinc oxide codoping annealing Raman spectroscopy XRD |
description |
ABSTRACT The effect of annealing temperature on the structural properties of Al-N codoped ZnO films were studied by X-ray diffraction, photoluminescence and Raman spectroscopy. ZnO films were deposited by sputtering technique on silicon substrates at 20 ºC, Al-concentration was kept constant and N-flow was changed to 6, 12 and 15 sccm. A thermal treatment was performed by annealing the sample during 30 minutes at 300, 400, 500, 600 and 700 °C. Before annealing, Raman spectra shows two vibration modes located at 275 and 580 cm-1 associated to the nitrogen incorporation and the presence of point defects. Both Raman intensities of modes I275 and I580 decreases when the nitrogen flow increases from 6 to 12 and 15 sccm, which is originated by a decreasing interstitial defects density. The improving of the crystal quality was confirmed by x-ray diffraction and room temperature photoluminescence measurements. After annealing, in the Raman spectra it was observed that I275 increases as the temperature increase, reaches a maximum intensity between 500 and 600 °C, and decreases for higher temperatures. X-ray diffraction measurements show that after annealing the compressive stress decrease progressively as the annealing temperature increase. This study suggests that 275 Raman mode could be used to estimate the optimal thermal treatment in order to achieve p-doping ZnO. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762018000200529 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762018000200529 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/s1517-707620180002.0454 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro em cooperação com a Associação Brasileira do Hidrogênio, ABH2 |
publisher.none.fl_str_mv |
Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro em cooperação com a Associação Brasileira do Hidrogênio, ABH2 |
dc.source.none.fl_str_mv |
Matéria (Rio de Janeiro) v.23 n.2 2018 reponame:Matéria (Rio de Janeiro. Online) instname:Matéria (Rio de Janeiro. Online) instacron:RLAM |
instname_str |
Matéria (Rio de Janeiro. Online) |
instacron_str |
RLAM |
institution |
RLAM |
reponame_str |
Matéria (Rio de Janeiro. Online) |
collection |
Matéria (Rio de Janeiro. Online) |
repository.name.fl_str_mv |
Matéria (Rio de Janeiro. Online) - Matéria (Rio de Janeiro. Online) |
repository.mail.fl_str_mv |
||materia@labh2.coppe.ufrj.br |
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1752126691044491264 |