Nanolitografia do silício utilizando o microscópio de força atômica

• Autor(a) principal: Santolin, Marcus Antônio
• Data de Publicação: 2009
• Tipo de documento: Dissertação
• Idioma: por
• Título da fonte: LOCUS Repositório Institucional da UFV
• Texto Completo: http://locus.ufv.br/handle/123456789/4232
• topic: Nanolitografia; Microscopia de força atômica; Nanoestruturas; Nanolithography; Atomic force microscopy; Nanostructures; CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA

The semiconductor industry is increasingly interested in the miniaturization of devices in the nanometer range. As the traditional techniques of lithography are reaching their limits growth the demand for new, including those that use equipment operating by probe, such as the atomic force microscope (AFM). One of the techniques that uses AFM on to produce nanolithography in semiconductors is the local anodic oxidation (LAO) of silicon (Si), one of the most widely used semiconductors in the manufacture of nano-devices. In general, the LAO is based on a mechanism for anodizing assisted by a high electric field produced by a potential difference applied between the probe and the conductive silicon. During the oxidation some of the parameters to be controlled are the scanning speed, the force between the tip and the sample, the relative humidity, the pre-oxidation cleaning, among others. In our study, we investigated the anodic nano-oxidation of silicon by the LAO technique using tungsten carbide probes. For this study, a chamber with controlled relative humidity adapted to the AFM, was built. The results show that it is possible to make nano-oxidation with pre- specified geometries in the micrometric and nanometric scale, of good quality and to study the dynamics of its roughness effectively.