Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructures
Main Author: | |
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Publication Date: | 2019 |
Other Authors: | , , |
Format: | Article |
Language: | eng |
Source: | Repositório Institucional da UNESP |
Download full: | http://dx.doi.org/10.1016/j.jallcom.2019.04.141 http://hdl.handle.net/11449/187601 |
Summary: | Optical waveguide amplifiers have seen a growing interest in the last years due to their applications in telecommunication. This paper reports a notable increase of the relative gain of Yb3+/Er3+ codoped Bi2O3–GeO2 waveguides by introducing disorder in the form of silicon nanostructure as scattering centers. A photoluminescence enhancement of about 10 times for the 520 nm and 1530 nm emission bands is observed in the waveguides when the silicon nanostructures are introduced. Increase of the Yb3+/Er3+ effective absorption, due to the scattering provided by the silicon nanostructures, and decrease of [Bi+], caused by the introduction of silicon, are proposed as likely causes for the luminescence and gain enhancement. The pedestal waveguides were fabricated by RF-sputtering followed by optical lithography and reactive ion etching. RF-sputtering of silicon together with Yb/Er and Bi2O3–GeO2 glass, followed by heat treatment, produced Yb3+/Er3+ codoped Bi2O3–GeO2 waveguides with silicon nanostructures of size 25–30 nm. The resulting relative gain reached 5.5 dB/cm at 1542 nm representing an enhancement of 50% with respect to waveguides without silicon nanostructures. This strategy of introducing appropriate disorder may open an avenue for designing and manufacture of novel photonic devices in this emerging field of integrated optics. |
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Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructuresOptical materialsOptical propertiesSputteringOptical waveguide amplifiers have seen a growing interest in the last years due to their applications in telecommunication. This paper reports a notable increase of the relative gain of Yb3+/Er3+ codoped Bi2O3–GeO2 waveguides by introducing disorder in the form of silicon nanostructure as scattering centers. A photoluminescence enhancement of about 10 times for the 520 nm and 1530 nm emission bands is observed in the waveguides when the silicon nanostructures are introduced. Increase of the Yb3+/Er3+ effective absorption, due to the scattering provided by the silicon nanostructures, and decrease of [Bi+], caused by the introduction of silicon, are proposed as likely causes for the luminescence and gain enhancement. The pedestal waveguides were fabricated by RF-sputtering followed by optical lithography and reactive ion etching. RF-sputtering of silicon together with Yb/Er and Bi2O3–GeO2 glass, followed by heat treatment, produced Yb3+/Er3+ codoped Bi2O3–GeO2 waveguides with silicon nanostructures of size 25–30 nm. The resulting relative gain reached 5.5 dB/cm at 1542 nm representing an enhancement of 50% with respect to waveguides without silicon nanostructures. This strategy of introducing appropriate disorder may open an avenue for designing and manufacture of novel photonic devices in this emerging field of integrated optics.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Centro de Lasers e Aplicações Instituto de Pesquisas Energéticas e Nucleares CNEN-IPEN/SP, Av. Prof. Lineu Prestes 2242Escola Politécnica Universidade de São PauloFaculdade de Tecnologia de São Paulo CEETEPS/UNESPFaculdade de Tecnologia de São Paulo CEETEPS/UNESPFAPESP: 2013/26113-6CNPq: 465.763/2014FAPESP: PV-2017/05854-9Instituto de Pesquisas Energéticas e Nucleares CNEN-IPEN/SPUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Wetter, Niklaus Ursusda Silva, Diego SilverioKassab, Luciana Reyes Pires [UNESP]Jimenez-Villar, Ernesto2019-10-06T15:41:27Z2019-10-06T15:41:27Z2019-07-25info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article120-126http://dx.doi.org/10.1016/j.jallcom.2019.04.141Journal of Alloys and Compounds, v. 794, p. 120-126.0925-8388http://hdl.handle.net/11449/18760110.1016/j.jallcom.2019.04.1412-s2.0-85064873435Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Alloys and Compoundsinfo:eu-repo/semantics/openAccess2021-10-23T05:17:06Zoai:repositorio.unesp.br:11449/187601Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T05:17:06Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructures |
title |
Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructures |
spellingShingle |
Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructures Wetter, Niklaus Ursus Optical materials Optical properties Sputtering |
title_short |
Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructures |
title_full |
Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructures |
title_fullStr |
Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructures |
title_full_unstemmed |
Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructures |
title_sort |
Improving performance in ytterbium-erbium doped waveguide amplifiers through scattering by large silicon nanostructures |
author |
Wetter, Niklaus Ursus |
author_facet |
Wetter, Niklaus Ursus da Silva, Diego Silverio Kassab, Luciana Reyes Pires [UNESP] Jimenez-Villar, Ernesto |
author_role |
author |
author2 |
da Silva, Diego Silverio Kassab, Luciana Reyes Pires [UNESP] Jimenez-Villar, Ernesto |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Instituto de Pesquisas Energéticas e Nucleares CNEN-IPEN/SP Universidade de São Paulo (USP) Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Wetter, Niklaus Ursus da Silva, Diego Silverio Kassab, Luciana Reyes Pires [UNESP] Jimenez-Villar, Ernesto |
dc.subject.por.fl_str_mv |
Optical materials Optical properties Sputtering |
topic |
Optical materials Optical properties Sputtering |
description |
Optical waveguide amplifiers have seen a growing interest in the last years due to their applications in telecommunication. This paper reports a notable increase of the relative gain of Yb3+/Er3+ codoped Bi2O3–GeO2 waveguides by introducing disorder in the form of silicon nanostructure as scattering centers. A photoluminescence enhancement of about 10 times for the 520 nm and 1530 nm emission bands is observed in the waveguides when the silicon nanostructures are introduced. Increase of the Yb3+/Er3+ effective absorption, due to the scattering provided by the silicon nanostructures, and decrease of [Bi+], caused by the introduction of silicon, are proposed as likely causes for the luminescence and gain enhancement. The pedestal waveguides were fabricated by RF-sputtering followed by optical lithography and reactive ion etching. RF-sputtering of silicon together with Yb/Er and Bi2O3–GeO2 glass, followed by heat treatment, produced Yb3+/Er3+ codoped Bi2O3–GeO2 waveguides with silicon nanostructures of size 25–30 nm. The resulting relative gain reached 5.5 dB/cm at 1542 nm representing an enhancement of 50% with respect to waveguides without silicon nanostructures. This strategy of introducing appropriate disorder may open an avenue for designing and manufacture of novel photonic devices in this emerging field of integrated optics. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-10-06T15:41:27Z 2019-10-06T15:41:27Z 2019-07-25 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.jallcom.2019.04.141 Journal of Alloys and Compounds, v. 794, p. 120-126. 0925-8388 http://hdl.handle.net/11449/187601 10.1016/j.jallcom.2019.04.141 2-s2.0-85064873435 |
url |
http://dx.doi.org/10.1016/j.jallcom.2019.04.141 http://hdl.handle.net/11449/187601 |
identifier_str_mv |
Journal of Alloys and Compounds, v. 794, p. 120-126. 0925-8388 10.1016/j.jallcom.2019.04.141 2-s2.0-85064873435 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Alloys and Compounds |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
120-126 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1797789538262712320 |