The Surface Treatment of Niobium Superconducting Reentrant Cavities by Means of High Temperature Nitrogen Plasma Based Ion Implantation

• Autor(a) principal: Oliveira,Rogério Moraes
• Data de Publicação: 2019
• Outros Autores: Aguiar,Odylio Denys, Araujo,Michel Felipe Lima de, Silva,Matheus M. N. F., Mello,Carina B., Ferreira,Elvis, Liccardo,Vincenzo, Savonov,Graziela da Silva, Baba,Koumei, Souza,Renata Lopes Gonçalves de
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Materials research (São Carlos. Online)
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392019000600207
• topic: Niobium; superconducting resonant cavities; plasma ion implantation; gravitational wave detector

High Temperature Nitrogen Plasma Based Ion Implantation (HT-NPBII) has been used to treat the surface of niobium superconducting reentrant cavities, which are part of parametric transducers in a resonant-mass gravitational wave detector. The aim is to enhance the corresponding electrical quality factors (Q-factors) which are closely related with the increase of the sensitivity of the system. In this experiment, the cavities are immersed in plasma and bombarded by energetic nitrogen ions, which are implanted into the surfaces of these heated substrates. The heating temperature of the cavities is controlled during the treatment and its level directly affects the N implantation depth profile due to the diffusion process. Additional tailoring of the nitrogen doping can be performed by the adjustment of the intensity and the duty cycle of the high negative voltage pulses used for ion implantation. For implantations performed at 5 kV /20 µs /300 Hz/ 700 °C, nitrogen atoms occupy interstitial spaces in the crystal lattice of niobium. The treatment of niobium superconducting cavities under these parameters caused the enhancement of two orders of magnitude of respective Q-factors. A set of characterization techniques was performed herein in order to help with the understanding of the underlying mechanism behind this phenomenon.