Modification of plasma polymer films by ion implantation
Autor(a) principal: | |
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Data de Publicação: | 2004 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1590/S1516-14392004000300019 http://hdl.handle.net/11449/212963 |
Resumo: | In this work, thin polymer films were prepared from acetylene and argon radiofrequency (13.56 MHz, 80 W) glow discharges. Post-deposition treatment was performed by plasma immersion ion implantation in nitrogen or helium glow discharges (13.56 MHz, 70 W). In these cases, samples were biased with 25 kV negative pulses. Exposure time to the bombardment plasma, t, ranged from 900 to 7200 s. Chemical composition of the film surfaces was investigated by X-ray Photoelectron Spectroscopy and the resistance to oxidation by the etching process, in reactive oxygen plasmas. Oxygen and nitrogen were detected in all the samples. While the concentration of the former continuously changed with t, that of N kept practically constant in small proportions. The film is predominantly formed by sp² states, but the proportion of sp³ hybridization slightly increased with t. The etching rate dropped under certain conditions of nitrogen bombardment whereas helium implantation has not significantly improved it. These results are ascribed to the crosslinking degree of the polymeric chains, ruled by the total amount of energy delivered to the film. |
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Repositório Institucional da UNESP |
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Modification of plasma polymer films by ion implantationplasma polymerplasma immersion ion implantationXPSetching rateIn this work, thin polymer films were prepared from acetylene and argon radiofrequency (13.56 MHz, 80 W) glow discharges. Post-deposition treatment was performed by plasma immersion ion implantation in nitrogen or helium glow discharges (13.56 MHz, 70 W). In these cases, samples were biased with 25 kV negative pulses. Exposure time to the bombardment plasma, t, ranged from 900 to 7200 s. Chemical composition of the film surfaces was investigated by X-ray Photoelectron Spectroscopy and the resistance to oxidation by the etching process, in reactive oxygen plasmas. Oxygen and nitrogen were detected in all the samples. While the concentration of the former continuously changed with t, that of N kept practically constant in small proportions. The film is predominantly formed by sp² states, but the proportion of sp³ hybridization slightly increased with t. The etching rate dropped under certain conditions of nitrogen bombardment whereas helium implantation has not significantly improved it. These results are ascribed to the crosslinking degree of the polymeric chains, ruled by the total amount of energy delivered to the film.Universidade Estadual Paulista, Departamento de Física e QuímicaUniversidade Federal do Paraná, Departamento de FísicaUniversidade Estadual PaulistaUniversidade Estadual Paulista, Departamento de Física e QuímicaUniversidade Estadual PaulistaABM, ABC, ABPolUniversidade Estadual Paulista (Unesp)Universidade Federal do ParanáSantos, Deborah Cristina Ribeiro Dos [UNESP]Rangel, Rita De Cássia Cipriano [UNESP]Mota, Rogério Pinto [UNESP]Cruz, Nilson Cristino Da [UNESP]Schreiner, Wido HerwigRangel, Elidiane Cipriano [UNESP]2021-07-14T10:47:52Z2021-07-14T10:47:52Z2004-09info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article493-497application/pdfhttp://dx.doi.org/10.1590/S1516-14392004000300019Materials Research. São Carlos, SP, Brazil: ABM, ABC, ABPol, v. 7, n. 3, p. 493-497, 2004.1516-14391980-5373http://hdl.handle.net/11449/21296310.1590/S1516-14392004000300019S1516-14392004000300019S1516-14392004000300019.pdfSciELOreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Researchinfo:eu-repo/semantics/openAccess2024-07-01T20:52:07Zoai:repositorio.unesp.br:11449/212963Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T15:54:01.142550Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Modification of plasma polymer films by ion implantation |
title |
Modification of plasma polymer films by ion implantation |
spellingShingle |
Modification of plasma polymer films by ion implantation Santos, Deborah Cristina Ribeiro Dos [UNESP] plasma polymer plasma immersion ion implantation XPS etching rate |
title_short |
Modification of plasma polymer films by ion implantation |
title_full |
Modification of plasma polymer films by ion implantation |
title_fullStr |
Modification of plasma polymer films by ion implantation |
title_full_unstemmed |
Modification of plasma polymer films by ion implantation |
title_sort |
Modification of plasma polymer films by ion implantation |
author |
Santos, Deborah Cristina Ribeiro Dos [UNESP] |
author_facet |
Santos, Deborah Cristina Ribeiro Dos [UNESP] Rangel, Rita De Cássia Cipriano [UNESP] Mota, Rogério Pinto [UNESP] Cruz, Nilson Cristino Da [UNESP] Schreiner, Wido Herwig Rangel, Elidiane Cipriano [UNESP] |
author_role |
author |
author2 |
Rangel, Rita De Cássia Cipriano [UNESP] Mota, Rogério Pinto [UNESP] Cruz, Nilson Cristino Da [UNESP] Schreiner, Wido Herwig Rangel, Elidiane Cipriano [UNESP] |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Universidade Federal do Paraná |
dc.contributor.author.fl_str_mv |
Santos, Deborah Cristina Ribeiro Dos [UNESP] Rangel, Rita De Cássia Cipriano [UNESP] Mota, Rogério Pinto [UNESP] Cruz, Nilson Cristino Da [UNESP] Schreiner, Wido Herwig Rangel, Elidiane Cipriano [UNESP] |
dc.subject.por.fl_str_mv |
plasma polymer plasma immersion ion implantation XPS etching rate |
topic |
plasma polymer plasma immersion ion implantation XPS etching rate |
description |
In this work, thin polymer films were prepared from acetylene and argon radiofrequency (13.56 MHz, 80 W) glow discharges. Post-deposition treatment was performed by plasma immersion ion implantation in nitrogen or helium glow discharges (13.56 MHz, 70 W). In these cases, samples were biased with 25 kV negative pulses. Exposure time to the bombardment plasma, t, ranged from 900 to 7200 s. Chemical composition of the film surfaces was investigated by X-ray Photoelectron Spectroscopy and the resistance to oxidation by the etching process, in reactive oxygen plasmas. Oxygen and nitrogen were detected in all the samples. While the concentration of the former continuously changed with t, that of N kept practically constant in small proportions. The film is predominantly formed by sp² states, but the proportion of sp³ hybridization slightly increased with t. The etching rate dropped under certain conditions of nitrogen bombardment whereas helium implantation has not significantly improved it. These results are ascribed to the crosslinking degree of the polymeric chains, ruled by the total amount of energy delivered to the film. |
publishDate |
2004 |
dc.date.none.fl_str_mv |
2004-09 2021-07-14T10:47:52Z 2021-07-14T10:47:52Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1590/S1516-14392004000300019 Materials Research. São Carlos, SP, Brazil: ABM, ABC, ABPol, v. 7, n. 3, p. 493-497, 2004. 1516-1439 1980-5373 http://hdl.handle.net/11449/212963 10.1590/S1516-14392004000300019 S1516-14392004000300019 S1516-14392004000300019.pdf |
url |
http://dx.doi.org/10.1590/S1516-14392004000300019 http://hdl.handle.net/11449/212963 |
identifier_str_mv |
Materials Research. São Carlos, SP, Brazil: ABM, ABC, ABPol, v. 7, n. 3, p. 493-497, 2004. 1516-1439 1980-5373 10.1590/S1516-14392004000300019 S1516-14392004000300019 S1516-14392004000300019.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Materials Research |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
493-497 application/pdf |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
SciELO reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128222480564224 |