Studies of phosphorus Gaussian profile emitter silicon solar cells
Autor(a) principal: | |
---|---|
Data de Publicação: | 2001 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392001000200018 |
Resumo: | Considering recent modifications on n-type highly doped silicon parameters, an emitter optimization was made based on one-dimensional models with analytical solutions. In order to get good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and non-homogeneous, with phosphorus Gaussian profile emitter solar cells were optimized. According to our results: homogeneous emitter solar cells show their maximum efficiencies (<FONT FACE="Symbol">h @ 21.60-21.74%)</FONT>with doping levelsnus = 1x10(19) - 5x10(18) (cm-3) and (1.2-2.0) mum emitter thickness range. Non-homogeneous emitter solar cells provide a slightly higher efficiency (eta = 21.82-21.92%), with Ns = 1x10(20) (cm-3) with 2.0 mum thickness under metal-contacted surface and Ns = 1x10(19) - 5x10(18) (cm-3) with (1.2-2.0) mum thickness range, (sheet resistance range 90-100 <FONT FACE="Symbol">W/ <img SRC="http:/img/fbpe/mr/v4n2/n2a17fou.gif" BORDER="0"></FONT>) under passivated surface. Although non-homogeneous emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable. |
id |
ABMABCABPOL-1_5aebaa5822481c3bba6ec908ce427882 |
---|---|
oai_identifier_str |
oai:scielo:S1516-14392001000200018 |
network_acronym_str |
ABMABCABPOL-1 |
network_name_str |
Materials research (São Carlos. Online) |
repository_id_str |
|
spelling |
Studies of phosphorus Gaussian profile emitter silicon solar cellssolar cell efficiencies-1homogeneous emitter-2non-homogeneous emitter-3Gaussian profile-4Considering recent modifications on n-type highly doped silicon parameters, an emitter optimization was made based on one-dimensional models with analytical solutions. In order to get good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and non-homogeneous, with phosphorus Gaussian profile emitter solar cells were optimized. According to our results: homogeneous emitter solar cells show their maximum efficiencies (<FONT FACE="Symbol">h @ 21.60-21.74%)</FONT>with doping levelsnus = 1x10(19) - 5x10(18) (cm-3) and (1.2-2.0) mum emitter thickness range. Non-homogeneous emitter solar cells provide a slightly higher efficiency (eta = 21.82-21.92%), with Ns = 1x10(20) (cm-3) with 2.0 mum thickness under metal-contacted surface and Ns = 1x10(19) - 5x10(18) (cm-3) with (1.2-2.0) mum thickness range, (sheet resistance range 90-100 <FONT FACE="Symbol">W/ <img SRC="http:/img/fbpe/mr/v4n2/n2a17fou.gif" BORDER="0"></FONT>) under passivated surface. Although non-homogeneous emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable.ABM, ABC, ABPol2001-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392001000200018Materials Research v.4 n.2 2001reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392001000200018info:eu-repo/semantics/openAccessStem,N.Cid,M.eng2001-07-11T00:00:00Zoai:scielo:S1516-14392001000200018Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2001-07-11T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Studies of phosphorus Gaussian profile emitter silicon solar cells |
title |
Studies of phosphorus Gaussian profile emitter silicon solar cells |
spellingShingle |
Studies of phosphorus Gaussian profile emitter silicon solar cells Stem,N. solar cell efficiencies-1 homogeneous emitter-2 non-homogeneous emitter-3 Gaussian profile-4 |
title_short |
Studies of phosphorus Gaussian profile emitter silicon solar cells |
title_full |
Studies of phosphorus Gaussian profile emitter silicon solar cells |
title_fullStr |
Studies of phosphorus Gaussian profile emitter silicon solar cells |
title_full_unstemmed |
Studies of phosphorus Gaussian profile emitter silicon solar cells |
title_sort |
Studies of phosphorus Gaussian profile emitter silicon solar cells |
author |
Stem,N. |
author_facet |
Stem,N. Cid,M. |
author_role |
author |
author2 |
Cid,M. |
author2_role |
author |
dc.contributor.author.fl_str_mv |
Stem,N. Cid,M. |
dc.subject.por.fl_str_mv |
solar cell efficiencies-1 homogeneous emitter-2 non-homogeneous emitter-3 Gaussian profile-4 |
topic |
solar cell efficiencies-1 homogeneous emitter-2 non-homogeneous emitter-3 Gaussian profile-4 |
description |
Considering recent modifications on n-type highly doped silicon parameters, an emitter optimization was made based on one-dimensional models with analytical solutions. In order to get good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and non-homogeneous, with phosphorus Gaussian profile emitter solar cells were optimized. According to our results: homogeneous emitter solar cells show their maximum efficiencies (<FONT FACE="Symbol">h @ 21.60-21.74%)</FONT>with doping levelsnus = 1x10(19) - 5x10(18) (cm-3) and (1.2-2.0) mum emitter thickness range. Non-homogeneous emitter solar cells provide a slightly higher efficiency (eta = 21.82-21.92%), with Ns = 1x10(20) (cm-3) with 2.0 mum thickness under metal-contacted surface and Ns = 1x10(19) - 5x10(18) (cm-3) with (1.2-2.0) mum thickness range, (sheet resistance range 90-100 <FONT FACE="Symbol">W/ <img SRC="http:/img/fbpe/mr/v4n2/n2a17fou.gif" BORDER="0"></FONT>) under passivated surface. Although non-homogeneous emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable. |
publishDate |
2001 |
dc.date.none.fl_str_mv |
2001-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392001000200018 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392001000200018 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S1516-14392001000200018 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.4 n.2 2001 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212656641736704 |