Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells

Detalhes bibliográficos
Autor(a) principal: Sánchez,Manuel Cid
Data de Publicação: 2009
Outros Autores: Stem,Nair
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392009000100006
Resumo: This work focuses on studying two types of structure: homogeneous and double-diffused emitter silicon solar cells. The emitter collection efficiencies and the recombination current densities were studied for a wide range of surface dopant concentrations and thicknesses. The frontal metal-grid was optimized for each emitter, considering the dependence on the metal-semiconductor contact resistivity and on the emitter sheet resistance. The best efficiency for n+p structures, η≈ 25.5%, is found for emitters with thicknesses between (0.5-3) µm and surface doping concentrations in the range 2 x 10(19) cm-3- 4 x 10(18) cm-3; while the n++n+p structure a maximum efficiency of η≈ 26.0% was identified for an even wider range of emitter profiles.
id ABMABCABPOL-1_7cab1bd5a67d8dbe384b8e43592abf24
oai_identifier_str oai:scielo:S1516-14392009000100006
network_acronym_str ABMABCABPOL-1
network_name_str Materials research (São Carlos. Online)
repository_id_str
spelling Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cellsmodellingemitter optimizationefficiency limitsThis work focuses on studying two types of structure: homogeneous and double-diffused emitter silicon solar cells. The emitter collection efficiencies and the recombination current densities were studied for a wide range of surface dopant concentrations and thicknesses. The frontal metal-grid was optimized for each emitter, considering the dependence on the metal-semiconductor contact resistivity and on the emitter sheet resistance. The best efficiency for n+p structures, η≈ 25.5%, is found for emitters with thicknesses between (0.5-3) µm and surface doping concentrations in the range 2 x 10(19) cm-3- 4 x 10(18) cm-3; while the n++n+p structure a maximum efficiency of η≈ 26.0% was identified for an even wider range of emitter profiles.ABM, ABC, ABPol2009-03-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392009000100006Materials Research v.12 n.1 2009reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392009000100006info:eu-repo/semantics/openAccessSánchez,Manuel CidStem,Naireng2009-05-18T00:00:00Zoai:scielo:S1516-14392009000100006Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2009-05-18T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
title Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
spellingShingle Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
Sánchez,Manuel Cid
modelling
emitter optimization
efficiency limits
title_short Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
title_full Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
title_fullStr Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
title_full_unstemmed Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
title_sort Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
author Sánchez,Manuel Cid
author_facet Sánchez,Manuel Cid
Stem,Nair
author_role author
author2 Stem,Nair
author2_role author
dc.contributor.author.fl_str_mv Sánchez,Manuel Cid
Stem,Nair
dc.subject.por.fl_str_mv modelling
emitter optimization
efficiency limits
topic modelling
emitter optimization
efficiency limits
description This work focuses on studying two types of structure: homogeneous and double-diffused emitter silicon solar cells. The emitter collection efficiencies and the recombination current densities were studied for a wide range of surface dopant concentrations and thicknesses. The frontal metal-grid was optimized for each emitter, considering the dependence on the metal-semiconductor contact resistivity and on the emitter sheet resistance. The best efficiency for n+p structures, η≈ 25.5%, is found for emitters with thicknesses between (0.5-3) µm and surface doping concentrations in the range 2 x 10(19) cm-3- 4 x 10(18) cm-3; while the n++n+p structure a maximum efficiency of η≈ 26.0% was identified for an even wider range of emitter profiles.
publishDate 2009
dc.date.none.fl_str_mv 2009-03-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392009000100006
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392009000100006
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S1516-14392009000100006
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.12 n.1 2009
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
_version_ 1754212659240108032

Registros relacionados