Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G Technologies
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392021000600224 |
Resumo: | Herein, cadmium bromide thin film devices are designed for possible use in communication technology. The 1.0 μ m thin layer of CdBr2 is sandwiched between two Au (1.0 μ m thick) layers using the thermal evaporation technique under a vacuum pressure of 10-5 mbar. The Au/CdBr2/Au devices are structurally morphologically and electrically characterized. It is observed that the hexagonal cadmium bromide exhibits large lattice mismatches with cubic Au substrates. The randomly distributed nano- rod like grains is accompanied with average surface roughness of ~26 nm. When an ac signal of low amplitude is imposed between the terminals of the Au/CdBr2/Au devices, a negative capacitance effect in the frequency domain of 10-1800 MHz is observed. In addition, analysis of the impedance spectra in the same domain has shown that the device behaves as band pass/stop filters suitable for 4G technology. The microwave based standard analysis of the Au/CdBr2/Au band filters have shown that it displays a notch ( f c o) frequency of 2.0 GHz. The cutoff frequency at f c o reaches 7.86 GHz. The features of the Au/CdBr2/Au devices nominate it for use as microwave resonators and as negative capacitance devices suitable for; 4G technology, noise reduction and for parasitic capacitance cancellation. |
id |
ABMABCABPOL-1_73a34096128994b0f0f5ae8564ebfd86 |
---|---|
oai_identifier_str |
oai:scielo:S1516-14392021000600224 |
network_acronym_str |
ABMABCABPOL-1 |
network_name_str |
Materials research (São Carlos. Online) |
repository_id_str |
|
spelling |
Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G TechnologiesCdBr24G band filternegative capacitancemicrowave resonatorsHerein, cadmium bromide thin film devices are designed for possible use in communication technology. The 1.0 μ m thin layer of CdBr2 is sandwiched between two Au (1.0 μ m thick) layers using the thermal evaporation technique under a vacuum pressure of 10-5 mbar. The Au/CdBr2/Au devices are structurally morphologically and electrically characterized. It is observed that the hexagonal cadmium bromide exhibits large lattice mismatches with cubic Au substrates. The randomly distributed nano- rod like grains is accompanied with average surface roughness of ~26 nm. When an ac signal of low amplitude is imposed between the terminals of the Au/CdBr2/Au devices, a negative capacitance effect in the frequency domain of 10-1800 MHz is observed. In addition, analysis of the impedance spectra in the same domain has shown that the device behaves as band pass/stop filters suitable for 4G technology. The microwave based standard analysis of the Au/CdBr2/Au band filters have shown that it displays a notch ( f c o) frequency of 2.0 GHz. The cutoff frequency at f c o reaches 7.86 GHz. The features of the Au/CdBr2/Au devices nominate it for use as microwave resonators and as negative capacitance devices suitable for; 4G technology, noise reduction and for parasitic capacitance cancellation.ABM, ABC, ABPol2021-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392021000600224Materials Research v.24 n.6 2021reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1980-5373-mr-2021-0378info:eu-repo/semantics/openAccessQasrawi,A. F.Hamarsheh,Areen A.eng2021-10-20T00:00:00Zoai:scielo:S1516-14392021000600224Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2021-10-20T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G Technologies |
title |
Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G Technologies |
spellingShingle |
Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G Technologies Qasrawi,A. F. CdBr2 4G band filter negative capacitance microwave resonators |
title_short |
Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G Technologies |
title_full |
Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G Technologies |
title_fullStr |
Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G Technologies |
title_full_unstemmed |
Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G Technologies |
title_sort |
Design of Au/Cdbr2/Au as Negative Capacitance Devices and as Band Filters Suitable for 4G Technologies |
author |
Qasrawi,A. F. |
author_facet |
Qasrawi,A. F. Hamarsheh,Areen A. |
author_role |
author |
author2 |
Hamarsheh,Areen A. |
author2_role |
author |
dc.contributor.author.fl_str_mv |
Qasrawi,A. F. Hamarsheh,Areen A. |
dc.subject.por.fl_str_mv |
CdBr2 4G band filter negative capacitance microwave resonators |
topic |
CdBr2 4G band filter negative capacitance microwave resonators |
description |
Herein, cadmium bromide thin film devices are designed for possible use in communication technology. The 1.0 μ m thin layer of CdBr2 is sandwiched between two Au (1.0 μ m thick) layers using the thermal evaporation technique under a vacuum pressure of 10-5 mbar. The Au/CdBr2/Au devices are structurally morphologically and electrically characterized. It is observed that the hexagonal cadmium bromide exhibits large lattice mismatches with cubic Au substrates. The randomly distributed nano- rod like grains is accompanied with average surface roughness of ~26 nm. When an ac signal of low amplitude is imposed between the terminals of the Au/CdBr2/Au devices, a negative capacitance effect in the frequency domain of 10-1800 MHz is observed. In addition, analysis of the impedance spectra in the same domain has shown that the device behaves as band pass/stop filters suitable for 4G technology. The microwave based standard analysis of the Au/CdBr2/Au band filters have shown that it displays a notch ( f c o) frequency of 2.0 GHz. The cutoff frequency at f c o reaches 7.86 GHz. The features of the Au/CdBr2/Au devices nominate it for use as microwave resonators and as negative capacitance devices suitable for; 4G technology, noise reduction and for parasitic capacitance cancellation. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392021000600224 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392021000600224 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/1980-5373-mr-2021-0378 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.24 n.6 2021 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212679601356800 |