Characterization of Sn Doped ZnS Thin Films Synthesized by CBD

Detalhes bibliográficos
Autor(a) principal: Mukherjee,Ayan
Data de Publicação: 2017
Outros Autores: Mitra,Partha
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000200430
Resumo: Zinc sulphide (ZnS) thin film were prepared using chemical bath deposition (CBD) process and tin (Sn) doping was successfully carried out in ZnS. Structural, morphological and microstructural characterization was carried out using XRD, TEM, FESEM and EDX. XRD and SAED pattern confirms presence of hexagonal phase. Reitveld analysis using MAUD software was used for particle size estimation. A constantly decreasing trend in particle size was observed with increasing tin incorporation in ZnS film which was due to enhanced microstrain resulting for tin incorporation. The particle size of prepared hexagonal wurtzite ZnS was around 14-18 nm with average size of ~16.5 nm. The bandgap of the film increases from ~ 3.69 eV for ZnS to ~ 3.90 eV for 5% Sn doped ZnS film which might be due to more ordered hexagonal structure as a result of tin incorporation. Band gap tenability property makes Sn doped ZnS suitable for application in different optoelectronics devices. PL study shows variation of intensity with excitation wavelength and a red shift is noticed for increasing excitation wavelength.
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spelling Characterization of Sn Doped ZnS Thin Films Synthesized by CBDCBDSn:ZnS thin filmXRDTEMParticle sizeOptical band gapZinc sulphide (ZnS) thin film were prepared using chemical bath deposition (CBD) process and tin (Sn) doping was successfully carried out in ZnS. Structural, morphological and microstructural characterization was carried out using XRD, TEM, FESEM and EDX. XRD and SAED pattern confirms presence of hexagonal phase. Reitveld analysis using MAUD software was used for particle size estimation. A constantly decreasing trend in particle size was observed with increasing tin incorporation in ZnS film which was due to enhanced microstrain resulting for tin incorporation. The particle size of prepared hexagonal wurtzite ZnS was around 14-18 nm with average size of ~16.5 nm. The bandgap of the film increases from ~ 3.69 eV for ZnS to ~ 3.90 eV for 5% Sn doped ZnS film which might be due to more ordered hexagonal structure as a result of tin incorporation. Band gap tenability property makes Sn doped ZnS suitable for application in different optoelectronics devices. PL study shows variation of intensity with excitation wavelength and a red shift is noticed for increasing excitation wavelength.ABM, ABC, ABPol2017-04-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000200430Materials Research v.20 n.2 2017reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1980-5373-mr-2016-0628info:eu-repo/semantics/openAccessMukherjee,AyanMitra,Parthaeng2017-04-18T00:00:00Zoai:scielo:S1516-14392017000200430Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2017-04-18T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Characterization of Sn Doped ZnS Thin Films Synthesized by CBD
title Characterization of Sn Doped ZnS Thin Films Synthesized by CBD
spellingShingle Characterization of Sn Doped ZnS Thin Films Synthesized by CBD
Mukherjee,Ayan
CBD
Sn:ZnS thin film
XRD
TEM
Particle size
Optical band gap
title_short Characterization of Sn Doped ZnS Thin Films Synthesized by CBD
title_full Characterization of Sn Doped ZnS Thin Films Synthesized by CBD
title_fullStr Characterization of Sn Doped ZnS Thin Films Synthesized by CBD
title_full_unstemmed Characterization of Sn Doped ZnS Thin Films Synthesized by CBD
title_sort Characterization of Sn Doped ZnS Thin Films Synthesized by CBD
author Mukherjee,Ayan
author_facet Mukherjee,Ayan
Mitra,Partha
author_role author
author2 Mitra,Partha
author2_role author
dc.contributor.author.fl_str_mv Mukherjee,Ayan
Mitra,Partha
dc.subject.por.fl_str_mv CBD
Sn:ZnS thin film
XRD
TEM
Particle size
Optical band gap
topic CBD
Sn:ZnS thin film
XRD
TEM
Particle size
Optical band gap
description Zinc sulphide (ZnS) thin film were prepared using chemical bath deposition (CBD) process and tin (Sn) doping was successfully carried out in ZnS. Structural, morphological and microstructural characterization was carried out using XRD, TEM, FESEM and EDX. XRD and SAED pattern confirms presence of hexagonal phase. Reitveld analysis using MAUD software was used for particle size estimation. A constantly decreasing trend in particle size was observed with increasing tin incorporation in ZnS film which was due to enhanced microstrain resulting for tin incorporation. The particle size of prepared hexagonal wurtzite ZnS was around 14-18 nm with average size of ~16.5 nm. The bandgap of the film increases from ~ 3.69 eV for ZnS to ~ 3.90 eV for 5% Sn doped ZnS film which might be due to more ordered hexagonal structure as a result of tin incorporation. Band gap tenability property makes Sn doped ZnS suitable for application in different optoelectronics devices. PL study shows variation of intensity with excitation wavelength and a red shift is noticed for increasing excitation wavelength.
publishDate 2017
dc.date.none.fl_str_mv 2017-04-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000200430
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000200430
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/1980-5373-mr-2016-0628
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.20 n.2 2017
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
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