Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films

Detalhes bibliográficos
Autor(a) principal: Akkera,Harish Sharma
Data de Publicação: 2017
Outros Autores: Reddy,Nallabala Nanda Kumar, Sekhar,Musalikunta Chandra
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000300712
Resumo: In the present work, we have investigated the structural and electrical properties of CrN thin films for a thickness t in the 30-220 nm range, grown on Si (100) substrates. The CrN/Si (100) films exhibits a structural transition from hexagonal phase (β-Cr2N) to cubic phase (CrN) with the increasing in film thickness, the change in structural transition is attributed to the decrease of film-substrate interfacial strain. From electrical resistivity measurements, the thickness of 150 nm CrN/Si (100) film shown the metal-semiconductor phase transition at around 250 K with energy band gap (Eg) 81 meV in semiconducting region, whereas the thickness of 30, 110 and 220 nm CrN/Si(100) films were shown only semiconducting behaviour for whole temperature range of 50-400 K. On the other hand, a clear grain size was increased in CrN/Si films with increasing thickness and its influence on transport properties was also seen. The possibility of phase transition and occurrence of semiconducting behaviour in the CrN films were analysed.
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spelling Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin FilmsMagnetron sputteringCrN thin filmsMetal-Semiconducting phase transitionIn the present work, we have investigated the structural and electrical properties of CrN thin films for a thickness t in the 30-220 nm range, grown on Si (100) substrates. The CrN/Si (100) films exhibits a structural transition from hexagonal phase (β-Cr2N) to cubic phase (CrN) with the increasing in film thickness, the change in structural transition is attributed to the decrease of film-substrate interfacial strain. From electrical resistivity measurements, the thickness of 150 nm CrN/Si (100) film shown the metal-semiconductor phase transition at around 250 K with energy band gap (Eg) 81 meV in semiconducting region, whereas the thickness of 30, 110 and 220 nm CrN/Si(100) films were shown only semiconducting behaviour for whole temperature range of 50-400 K. On the other hand, a clear grain size was increased in CrN/Si films with increasing thickness and its influence on transport properties was also seen. The possibility of phase transition and occurrence of semiconducting behaviour in the CrN films were analysed.ABM, ABC, ABPol2017-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000300712Materials Research v.20 n.3 2017reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1980-5373-mr-2016-0786info:eu-repo/semantics/openAccessAkkera,Harish SharmaReddy,Nallabala Nanda KumarSekhar,Musalikunta Chandraeng2017-06-23T00:00:00Zoai:scielo:S1516-14392017000300712Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2017-06-23T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films
title Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films
spellingShingle Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films
Akkera,Harish Sharma
Magnetron sputtering
CrN thin films
Metal-Semiconducting phase transition
title_short Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films
title_full Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films
title_fullStr Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films
title_full_unstemmed Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films
title_sort Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films
author Akkera,Harish Sharma
author_facet Akkera,Harish Sharma
Reddy,Nallabala Nanda Kumar
Sekhar,Musalikunta Chandra
author_role author
author2 Reddy,Nallabala Nanda Kumar
Sekhar,Musalikunta Chandra
author2_role author
author
dc.contributor.author.fl_str_mv Akkera,Harish Sharma
Reddy,Nallabala Nanda Kumar
Sekhar,Musalikunta Chandra
dc.subject.por.fl_str_mv Magnetron sputtering
CrN thin films
Metal-Semiconducting phase transition
topic Magnetron sputtering
CrN thin films
Metal-Semiconducting phase transition
description In the present work, we have investigated the structural and electrical properties of CrN thin films for a thickness t in the 30-220 nm range, grown on Si (100) substrates. The CrN/Si (100) films exhibits a structural transition from hexagonal phase (β-Cr2N) to cubic phase (CrN) with the increasing in film thickness, the change in structural transition is attributed to the decrease of film-substrate interfacial strain. From electrical resistivity measurements, the thickness of 150 nm CrN/Si (100) film shown the metal-semiconductor phase transition at around 250 K with energy band gap (Eg) 81 meV in semiconducting region, whereas the thickness of 30, 110 and 220 nm CrN/Si(100) films were shown only semiconducting behaviour for whole temperature range of 50-400 K. On the other hand, a clear grain size was increased in CrN/Si films with increasing thickness and its influence on transport properties was also seen. The possibility of phase transition and occurrence of semiconducting behaviour in the CrN films were analysed.
publishDate 2017
dc.date.none.fl_str_mv 2017-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000300712
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000300712
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/1980-5373-mr-2016-0786
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.20 n.3 2017
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
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