Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers

Detalhes bibliográficos
Autor(a) principal: Al Garni,Sabah E.
Data de Publicação: 2022
Outros Autores: Qasrawi,A.F., Khusayfan,Najla M.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392022000100372
Resumo: Abstract Herein, the design and characterization of Ag/SeO2/C avalanche type resonant tunneling devices are reported. Thin pellets of SeO2 nano-powders pressed under hydraulic pressure of 1.0 MPa which is used as the active material are characterized. They showed tetragonal structure refereeing to space group of P 4 2 m b c and lattice parameters of a = b = 7.866 Å and c =5.336 Å. The current-voltage characteristic curves have shown that SeO2 can perform as active media to produce resonant tunneling diodes when forward biased and as avalanche type diode when reverse biased. The peak to valley current ratios of these diodes reached 18.3. In addition, the impedance spectroscopy measurements have shown that the device works in the low impedance mode when operated in the microwave range of frequency near 1.50 GHz. Negative conductance effect is observed in that frequency domain. The features of the Ag/SeO2/C nominate them for use as signal amplifiers and microwave oscillators.
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spelling Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky BarriersAg/SeO2/Ctetragonalmicrowave cavityEsaki diodesnegative conductanceAbstract Herein, the design and characterization of Ag/SeO2/C avalanche type resonant tunneling devices are reported. Thin pellets of SeO2 nano-powders pressed under hydraulic pressure of 1.0 MPa which is used as the active material are characterized. They showed tetragonal structure refereeing to space group of P 4 2 m b c and lattice parameters of a = b = 7.866 Å and c =5.336 Å. The current-voltage characteristic curves have shown that SeO2 can perform as active media to produce resonant tunneling diodes when forward biased and as avalanche type diode when reverse biased. The peak to valley current ratios of these diodes reached 18.3. In addition, the impedance spectroscopy measurements have shown that the device works in the low impedance mode when operated in the microwave range of frequency near 1.50 GHz. Negative conductance effect is observed in that frequency domain. The features of the Ag/SeO2/C nominate them for use as signal amplifiers and microwave oscillators.ABM, ABC, ABPol2022-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392022000100372Materials Research v.25 2022reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1980-5373-mr-2022-0156info:eu-repo/semantics/openAccessAl Garni,Sabah E.Qasrawi,A.F.Khusayfan,Najla M.eng2022-10-18T00:00:00Zoai:scielo:S1516-14392022000100372Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2022-10-18T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers
title Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers
spellingShingle Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers
Al Garni,Sabah E.
Ag/SeO2/C
tetragonal
microwave cavity
Esaki diodes
negative conductance
title_short Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers
title_full Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers
title_fullStr Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers
title_full_unstemmed Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers
title_sort Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers
author Al Garni,Sabah E.
author_facet Al Garni,Sabah E.
Qasrawi,A.F.
Khusayfan,Najla M.
author_role author
author2 Qasrawi,A.F.
Khusayfan,Najla M.
author2_role author
author
dc.contributor.author.fl_str_mv Al Garni,Sabah E.
Qasrawi,A.F.
Khusayfan,Najla M.
dc.subject.por.fl_str_mv Ag/SeO2/C
tetragonal
microwave cavity
Esaki diodes
negative conductance
topic Ag/SeO2/C
tetragonal
microwave cavity
Esaki diodes
negative conductance
description Abstract Herein, the design and characterization of Ag/SeO2/C avalanche type resonant tunneling devices are reported. Thin pellets of SeO2 nano-powders pressed under hydraulic pressure of 1.0 MPa which is used as the active material are characterized. They showed tetragonal structure refereeing to space group of P 4 2 m b c and lattice parameters of a = b = 7.866 Å and c =5.336 Å. The current-voltage characteristic curves have shown that SeO2 can perform as active media to produce resonant tunneling diodes when forward biased and as avalanche type diode when reverse biased. The peak to valley current ratios of these diodes reached 18.3. In addition, the impedance spectroscopy measurements have shown that the device works in the low impedance mode when operated in the microwave range of frequency near 1.50 GHz. Negative conductance effect is observed in that frequency domain. The features of the Ag/SeO2/C nominate them for use as signal amplifiers and microwave oscillators.
publishDate 2022
dc.date.none.fl_str_mv 2022-01-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392022000100372
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392022000100372
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/1980-5373-mr-2022-0156
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.25 2022
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
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