Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

Detalhes bibliográficos
Autor(a) principal: Chiquito,Adenilson José
Data de Publicação: 2004
Outros Autores: Pusep,Yuri Alexander, Mergulhão,Sérgio, Gobato,Yara Galvão, Galzerani,José Cláudio, Moshegov,Nicolai
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392004000300014
Resumo: A systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs) system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us to obtain reliable information on the microscopic structural evolution of this system. The single layer and the multilayer quantum dots were found to respond differently to the annealing process, due to the differences in strain that occur in both systems. The diffusion activated by strain provoked the appearance of an InGaAs alloy layer in substitution to the quantum dots layers; this change occurred at the annealing temperature T = 600 ºC in the multilayer system. A single dot layer, however, was observed even after the annealing at T = 700 ºC. Moreover, the low temperature annealing was found to improve the homogeneity of the multilayer system and to decrease the electrical interlayer coupling.
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spelling Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots systemInAs/GaAs quantum dotscapacitanceraman scatteringA systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs) system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us to obtain reliable information on the microscopic structural evolution of this system. The single layer and the multilayer quantum dots were found to respond differently to the annealing process, due to the differences in strain that occur in both systems. The diffusion activated by strain provoked the appearance of an InGaAs alloy layer in substitution to the quantum dots layers; this change occurred at the annealing temperature T = 600 ºC in the multilayer system. A single dot layer, however, was observed even after the annealing at T = 700 ºC. Moreover, the low temperature annealing was found to improve the homogeneity of the multilayer system and to decrease the electrical interlayer coupling.ABM, ABC, ABPol2004-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392004000300014Materials Research v.7 n.3 2004reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392004000300014info:eu-repo/semantics/openAccessChiquito,Adenilson JoséPusep,Yuri AlexanderMergulhão,SérgioGobato,Yara GalvãoGalzerani,José CláudioMoshegov,Nicolaieng2004-08-13T00:00:00Zoai:scielo:S1516-14392004000300014Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2004-08-13T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system
title Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system
spellingShingle Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system
Chiquito,Adenilson José
InAs/GaAs quantum dots
capacitance
raman scattering
title_short Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system
title_full Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system
title_fullStr Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system
title_full_unstemmed Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system
title_sort Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system
author Chiquito,Adenilson José
author_facet Chiquito,Adenilson José
Pusep,Yuri Alexander
Mergulhão,Sérgio
Gobato,Yara Galvão
Galzerani,José Cláudio
Moshegov,Nicolai
author_role author
author2 Pusep,Yuri Alexander
Mergulhão,Sérgio
Gobato,Yara Galvão
Galzerani,José Cláudio
Moshegov,Nicolai
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Chiquito,Adenilson José
Pusep,Yuri Alexander
Mergulhão,Sérgio
Gobato,Yara Galvão
Galzerani,José Cláudio
Moshegov,Nicolai
dc.subject.por.fl_str_mv InAs/GaAs quantum dots
capacitance
raman scattering
topic InAs/GaAs quantum dots
capacitance
raman scattering
description A systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs) system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us to obtain reliable information on the microscopic structural evolution of this system. The single layer and the multilayer quantum dots were found to respond differently to the annealing process, due to the differences in strain that occur in both systems. The diffusion activated by strain provoked the appearance of an InGaAs alloy layer in substitution to the quantum dots layers; this change occurred at the annealing temperature T = 600 ºC in the multilayer system. A single dot layer, however, was observed even after the annealing at T = 700 ºC. Moreover, the low temperature annealing was found to improve the homogeneity of the multilayer system and to decrease the electrical interlayer coupling.
publishDate 2004
dc.date.none.fl_str_mv 2004-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392004000300014
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392004000300014
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S1516-14392004000300014
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.7 n.3 2004
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
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