Characterization of SiC thin films deposited by HiPIMS

Detalhes bibliográficos
Autor(a) principal: Leal,Gabriela
Data de Publicação: 2014
Outros Autores: Campos,Tiago Moreira Bastos, Silva Sobrinho,Argemiro Soares da, Pessoa,Rodrigo Sávio, Maciel,Homero Santiago, Massi,Marcos
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000200027
Resumo: In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.
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spelling Characterization of SiC thin films deposited by HiPIMSHiPIMSthin filmsilicon carbideIn this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.ABM, ABC, ABPol2014-04-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000200027Materials Research v.17 n.2 2014reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392014005000038info:eu-repo/semantics/openAccessLeal,GabrielaCampos,Tiago Moreira BastosSilva Sobrinho,Argemiro Soares daPessoa,Rodrigo SávioMaciel,Homero SantiagoMassi,Marcoseng2014-05-06T00:00:00Zoai:scielo:S1516-14392014000200027Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2014-05-06T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Characterization of SiC thin films deposited by HiPIMS
title Characterization of SiC thin films deposited by HiPIMS
spellingShingle Characterization of SiC thin films deposited by HiPIMS
Leal,Gabriela
HiPIMS
thin film
silicon carbide
title_short Characterization of SiC thin films deposited by HiPIMS
title_full Characterization of SiC thin films deposited by HiPIMS
title_fullStr Characterization of SiC thin films deposited by HiPIMS
title_full_unstemmed Characterization of SiC thin films deposited by HiPIMS
title_sort Characterization of SiC thin films deposited by HiPIMS
author Leal,Gabriela
author_facet Leal,Gabriela
Campos,Tiago Moreira Bastos
Silva Sobrinho,Argemiro Soares da
Pessoa,Rodrigo Sávio
Maciel,Homero Santiago
Massi,Marcos
author_role author
author2 Campos,Tiago Moreira Bastos
Silva Sobrinho,Argemiro Soares da
Pessoa,Rodrigo Sávio
Maciel,Homero Santiago
Massi,Marcos
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Leal,Gabriela
Campos,Tiago Moreira Bastos
Silva Sobrinho,Argemiro Soares da
Pessoa,Rodrigo Sávio
Maciel,Homero Santiago
Massi,Marcos
dc.subject.por.fl_str_mv HiPIMS
thin film
silicon carbide
topic HiPIMS
thin film
silicon carbide
description In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.
publishDate 2014
dc.date.none.fl_str_mv 2014-04-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000200027
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000200027
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S1516-14392014005000038
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.17 n.2 2014
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
_version_ 1754212664687460352

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