Effect of impurities on the Raman scattering of 6H-SiC crystals

Detalhes bibliográficos
Autor(a) principal: Lin,Shenghuang
Data de Publicação: 2012
Outros Autores: Chen,Zhiming, Li,Lianbi, Yang,Chen
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000600003
Resumo: Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.
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spelling Effect of impurities on the Raman scattering of 6H-SiC crystalsRaman scattering6H-SiCimpurityRaman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.ABM, ABC, ABPol2012-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000600003Materials Research v.15 n.6 2012reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392012005000108info:eu-repo/semantics/openAccessLin,ShenghuangChen,ZhimingLi,LianbiYang,Cheneng2012-11-20T00:00:00Zoai:scielo:S1516-14392012000600003Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2012-11-20T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Effect of impurities on the Raman scattering of 6H-SiC crystals
title Effect of impurities on the Raman scattering of 6H-SiC crystals
spellingShingle Effect of impurities on the Raman scattering of 6H-SiC crystals
Lin,Shenghuang
Raman scattering
6H-SiC
impurity
title_short Effect of impurities on the Raman scattering of 6H-SiC crystals
title_full Effect of impurities on the Raman scattering of 6H-SiC crystals
title_fullStr Effect of impurities on the Raman scattering of 6H-SiC crystals
title_full_unstemmed Effect of impurities on the Raman scattering of 6H-SiC crystals
title_sort Effect of impurities on the Raman scattering of 6H-SiC crystals
author Lin,Shenghuang
author_facet Lin,Shenghuang
Chen,Zhiming
Li,Lianbi
Yang,Chen
author_role author
author2 Chen,Zhiming
Li,Lianbi
Yang,Chen
author2_role author
author
author
dc.contributor.author.fl_str_mv Lin,Shenghuang
Chen,Zhiming
Li,Lianbi
Yang,Chen
dc.subject.por.fl_str_mv Raman scattering
6H-SiC
impurity
topic Raman scattering
6H-SiC
impurity
description Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.
publishDate 2012
dc.date.none.fl_str_mv 2012-12-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000600003
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000600003
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S1516-14392012005000108
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.15 n.6 2012
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
_version_ 1754212661641347072

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